Gas jetting apparatus for film formation apparatus

Abstract

The gas jetting apparatus according to the present invention includes a gas jetting cell unit for rectifying a gas and jetting the rectified gas into the film formation apparatus. The gas jetting cell unit has a fan shape internally formed with a gap serving as a gas route. A gas in a gas dispersion supply unit enters from a wider-width side of the fan shape into the gap, and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus.

The invention claimed is: 
     
       1. A gas jetting apparatus for a film formation apparatus, comprising:
 a gas supply unit configured to supply a gas; 
 a gas dispersion supply unit configured to accept the gas supplied from the gas supply unit and disperse the gas; and 
 a gas jetting cell unit configured to accept the gas dispersed in the gas dispersion supply unit, rectify the gas, and jet the rectified gas into the film formation apparatus, wherein 
 the gas jetting cell unit has a fan shape internally formed with a gap serving as a hollow gas route, 
 the gas in the gas dispersion supply unit enters from a wider-width side of the fan shape into the gap, 
 due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus, 
 the gap includes a rectangular cross-section when viewed along a direction extending from the wider-width side to the narrower-width side, 
 a first distance between first and second sides of the rectangular cross-section is constant from the wider-width side to the narrower-width side, and 
 a second distance between third and fourth sides of the rectangular cross-section decreases from the wider-width side to the narrower-width side. 
 
     
     
       2. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein the gas jetting cell unit is made of sapphire or quartz. 
     
     
       3. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein
 the first distance is 3 mm or narrower, and 
 a gas pressure in a portion of the gas jetting apparatus is a value in a range from 10 kPa to 50 kPa inclusive. 
 
     
     
       4. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein a valve for adjusting a gas flow rate is coupled with a pressure controlling unit for controlling gas pressure in the gas jetting apparatus to a constant value. 
     
     
       5. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , further comprising a plurality of jetting-out holes,
 wherein a gas output from the gas jetting cell unit outputs, via the plurality of j ening-out holes, into the film formation apparatus. 
 
     
     
       6. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , further comprising a heating unit provided in the gas jetting cell unit. 
     
     
       7. The gas jetting apparatus for the film formation apparatus, according to  claim 6 , wherein, with the gas jetting cell unit:
 an ozone gas, a nitrogen oxide gas, or a hydrogen compound gas is used to serve as a gas passing through the gap, 
 the gas passing through the gap is oxygen-radicalized, nitrogen-radicalized or hydrogen-radicalized as a radicalized gas by heating by the heating unit, and 
 the radicalized gas is output to the film formation apparatus. 
 
     
     
       8. The gas jetting apparatus for the film formation apparatus, according to  claim 6 , wherein the heating unit is fan shaped. 
     
     
       9. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein
 the gas jetting cell unit is a dielectric, 
 the gas jetting apparatus further comprises an AC power supply configured to apply an AC voltage in the gap in the gas jetting cell unit, and 
 the gas jetting cell unit outputs a radical gas generated through dielectric barrier discharge generated in the gap with the AC voltage applied by the AC power supply to the film formation apparatus. 
 
     
     
       10. The gas jetting apparatus for the film formation apparatus, according to  claim 9 , wherein
 a gas to be supplied from the gas supply unit is a nitrogen gas or a nitrogen oxide gas, and 
 the radical gas to be generated through the dielectric barrier discharge in the gap of the gas jetting cell unit is a nitrogen radical. 
 
     
     
       11. The gas jetting apparatus for the film formation apparatus, according to  claim 9 , wherein
 a gas to be supplied from the gas supply unit is a gas mixed with an oxygen gas and a nitrogen gas or a nitrogen oxide gas in an amount in a range from several ppm to several ten thousand ppm, and 
 the radical gas to be generated through the dielectric barrier discharge in the gap of the gas jetting cell unit is an oxygen radical. 
 
     
     
       12. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein the gas jetting cell unit is provided in plural. 
     
     
       13. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein a gas to be supplied from the gas supply unit is a precursor gas. 
     
     
       14. The gas jetting apparatus for the film formation apparatus, according to  claim 1 , wherein a gas to be supplied from the gas supply unit is a source gas served as a raw material of a radical gas.