Layout pattern for magnetoresistive random access memory

Abstract

A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

What is claimed is: 
     
       1. A layout pattern for magnetoresistive random access memory (MRAM), comprising:
 a first magnetic tunneling junction (MTJ) pattern on a substrate; 
 a second MTJ pattern adjacent to the first MTJ pattern; and 
 a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement, the first MTJ pattern comprises a circle while the first metal interconnection pattern comprises an ellipse, and the first MTJ pattern and the second MTJ pattern are on a same level. 
 
     
     
       2. The layout pattern for MRAM of  claim 1 , wherein the first metal interconnection pattern is disposed along a first direction relative to the first MTJ pattern and the second MTJ pattern is disposed along a second direction relative to the first metal interconnection. 
     
     
       3. The layout pattern for MRAM of  claim 2 , wherein the second MTJ pattern is disposed along a third direction relative to the first MTJ pattern. 
     
     
       4. The layout pattern for MRAM of  claim 3 , wherein an angle included by the first direction and the third direction is less than 90 degrees. 
     
     
       5. The layout pattern for MRAM of  claim 3 , wherein the first direction, the second direction, and the third direction comprise a triangle. 
     
     
       6. The layout pattern for MRAM of  claim 3 , further comprising a second metal interconnection pattern disposed along the first direction relative to the second MTJ pattern. 
     
     
       7. The layout pattern for MRAM of  claim 6 , wherein the second metal interconnection pattern is disposed along the third direction relative to the first metal interconnection pattern. 
     
     
       8. The layout pattern for MRAM of  claim 6 , further comprising a third metal interconnection pattern disposed along the first direction and around the second MTJ pattern and the second metal interconnection pattern. 
     
     
       9. The layout pattern for MRAM of  claim 8 , wherein the third metal interconnection pattern comprises a rectangle. 
     
     
       10. A layout pattern for magnetoresistive random access memory (MRAM), comprising:
 a magnetic tunneling junction (MTJ) pattern on a substrate, wherein the MTJ pattern comprises a first L-shape; and 
 a first metal interconnection pattern adjacent to the MTJ pattern, wherein the first metal interconnection pattern comprises a second L-shape. 
 
     
     
       11. The layout pattern for MRAM of  claim 10 , wherein the MTJ pattern comprises a first portion extending along a first direction and a second portion extending along a second direction and the first metal interconnection pattern comprises a third portion extending along the first direction and a fourth portion extending along the second direction. 
     
     
       12. The layout pattern for MRAM of  claim 11 , wherein the first direction is orthogonal to the second direction. 
     
     
       13. The layout pattern for MRAM of  claim 11 , wherein the first portion comprises a first via pattern and the third portion comprises a second via pattern. 
     
     
       14. The layout pattern for MRAM of  claim 13 , wherein the first via pattern and the second via pattern are disposed diagonally. 
     
     
       15. The layout pattern for MRAM of  claim 14 , wherein each of the first via pattern and the second via pattern comprises a circle. 
     
     
       16. The layout pattern for MRAM of  claim 10 , further comprising a second metal interconnection pattern adjacent to two sides of the MTJ pattern. 
     
     
       17. The layout pattern for MRAM of  claim 16 , wherein the second metal interconnection pattern comprises a rectangle. 
     
     
       18. The layout pattern for MRAM of  claim 10 , wherein the MTJ pattern and the first metal interconnection pattern are on a same level.