Display device including a light amount control layer

Abstract

A display device includes: a backlight unit configured to emit light; a first substrate positioned in a path of a light emitted from the backlight unit and including a first pixel and a second pixel displaying different colors from each other; a second substrate facing the first substrate; a light amount control layer positioned between the first substrate and the second substrate; a gate line disposed on the first substrate and extending in a first direction; a storage line disposed on the substrate and spaced apart from the gate line; and a data line disposed on the first substrate and extending in a second direction intersecting the first direction. The first pixel includes a first thin film transistor, a first pixel electrode, and a first light conversion unit. The second pixel electrode includes a second thin film transistor, and a second light conversion unit.

What is claimed is: 
     
       1. A display device, comprising:
 a first substrate comprising a first pixel displaying a red color, a second pixel displaying a green color and a third pixel displaying a blue color; 
 a second substrate facing the first substrate; 
 a light amount control layer positioned between the first substrate and the second substrate; 
 a gate line disposed on the first substrate and extending in a first direction; 
 a storage line disposed on the first substrate and spaced apart from the gate line; and 
 first, second and third data lines disposed on the first substrate and extending in a second direction intersecting the first direction, 
 wherein the first pixel comprises: 
 a first thin film transistor connected to the gate line and the first data line; 
 a first pixel electrode connected to the first thin film transistor; and 
 a first light conversion unit disposed on the second substrate and overlapping the first pixel electrode, 
 wherein the second pixel comprises: 
 a second thin film transistor connected to the gate line and the second data line; 
 a second pixel electrode connected to the second thin film transistor; and 
 a second light conversion unit disposed on the second substrate and overlapping the second pixel electrode, 
 wherein the third pixel comprises: 
 a third thin film transistor connected to the gate line and the third data line; 
 a third pixel electrode connected to the third thin film transistor; and 
 a third light conversion unit disposed on the second substrate and overlapping the third pixel electrode, 
 wherein an area of the first pixel electrode is greater than an area of the second pixel electrode, 
 wherein the area of the second pixel electrode is greater than an area of the third pixel electrode, and 
 wherein an overlap area between the first pixel electrode and the storage line is less than an overlap area between the second pixel electrode and the storage line. 
 
     
     
       2. The display device of  claim 1 , wherein an overlap area between the third pixel electrode and the storage line is different from the overlap area between the first pixel electrode and the storage line and the overlap area between the second pixel electrode and the storage line. 
     
     
       3. The display device of  claim 1 , wherein an area ratio of the first pixel electrode, the second pixel electrode and the third pixel electrode is about 1.1 to 1.3:1:0.7 to 0.9. 
     
     
       4. The display device of  claim 1 , wherein the first thin film transistor comprises:
 a first gate electrode branching from the gate line; 
 a first semiconductor layer insulated from and overlapping the first gate electrode; and 
 a first source electrode and a first drain electrode disposed on the first semiconductor layer and spaced apart from each other, 
 wherein the second thin film transistor comprises: 
 a second gate electrode branching from the gate line; 
 a second semiconductor layer insulated from and overlapping the second gate electrode; and 
 a second source electrode and a second drain electrode disposed on the second semiconductor layer and spaced apart from each other, and 
 wherein an overlap area between the first gate electrode and the first drain electrode and an overlap area between the second gate electrode and the second drain electrode are different from each other. 
 
     
     
       5. The display device of  claim 4 , wherein the overlap area between the first gate electrode and the first drain electrode is larger than the overlap area between the second gate electrode and the second drain electrode. 
     
     
       6. The display device of  claim 4 , wherein the third thin film transistor comprises:
 a third gate electrode branching from the gate line; 
 a third semiconductor layer insulated from and overlapping the third gate electrode; and 
 a third source electrode and a third drain electrode disposed on the third semiconductor layer and spaced apart from each other, and 
 wherein an overlap area between the third gate electrode and the third drain electrode is different from the overlap area between the first gate electrode and the first drain electrode and the overlap area between the second gate electrode and the second drain electrode. 
 
     
     
       7. The display device of  claim 6 , wherein the overlap area between the second gate electrode and the second drain electrode is larger than the overlap area between the third gate electrode and the third drain electrode. 
     
     
       8. The display device of  claim 1 , wherein the first light conversion unit comprises a red phosphor, and
 wherein the second light conversion unit comprises a green phosphor. 
 
     
     
       9. The display device of  claim 8 , wherein the red phosphor and the green phosphor comprise at least one selected from a quantum dot, a quantum rod or a tetrapod quantum dot. 
     
     
       10. The display device of  claim 9 , wherein the quantum dot has a core-shell structure comprising a core and a shell covering the core,
 wherein the core comprises at least one selected from: CdSe, CdS, CdTe, ZnS, ZnSe, ZnTe, CdSeTe, CdZnS, CdSeS, PbSe, PbS, PbTe, AgInZnS, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InZnP, InGaP, InGaN, InAs or ZnO, and 
 wherein the shell comprises at least one selected from: CdS, CdSe, CdTe, CdO, ZnS, ZnSe, ZnSeS, ZnTe, ZnO, InP, InS, GaP, GaN, GaO, InZnP, InGaP, InGaN, InZnSCdSe, PbS, TiO, SrSe or HgSe. 
 
     
     
       11. The display device of  claim 8 , wherein the red phosphor and the green phosphor comprise at least one selected from: Y 3 Al 5 O 12 :Ce 3+ (YAG:Ce), Tb 3 Al 5 O 12 :Ce 3+ (TAG:Ce), (Sr,Ba,Ca) 2 SiO 4 :Eu 2+ , (Sr,Ba,Ca,Mg,Zn) 2 Si(OD) 4 :Eu 2+ (D=F,Cl,S,N,Br), Ba 2 MgSi 2 O 7 :Eu 2+ , Ba 2 SiO 4 :Eu 2+ , Ca 3 (Sc,Mg) 2 Si 3 O 12 :Ce 3+ , (Ca,Sr)S:Eu 2+ , (Sr,Ca)Ga 2 S 4 :Eu 2+ , SrSi 2 O 2 N 2 :Eu 2+ , SiAlON:Ce 3+ , β-SiAlON:Eu 2+ , Ca-α-SiAlON:Eu 2+ , Ba 3 Si 6 O 12 N 2 :Eu 2+ , CaAlSiN 3 :Eu 2+ , (Sr,Ca)AlSiN 3 :Eu 2+ , Sr 2 Si 5 N 8 :Eu 2+ , (Sr,Ba)Al 2 O 4 :Eu 2+ , (Mg,Sr)Al 2 O 4 :Eu 2+ or BaMg 2 Al 16 O 27 :Eu 2+ . 
     
     
       12. The display device of  claim 1 , further comprising a backlight unit configured to emit blue light, the first substrate being disposed on the backlight unit. 
     
     
       13. The display device of  claim 1 , further comprising a polarizer disposed between the light amount control layer and the second substrate. 
     
     
       14. The display device of  claim 1 , wherein a first portion of the storage line extends along a first edge of the first pixel electrode and a second portion of the storage line extends along a first edge of the second pixel electrode, and
 wherein an overlap area between the first pixel electrode and the first portion of the storage line of a first storage capacitor and an overlap area between the second pixel electrode and the second portion of the storage line of a second storage capacitor are different from each other. 
 
     
     
       15. The display device of  claim 14 ,
 wherein the storage line further includes a main portion extending in the first direction, and 
 wherein the first portion of the storage line and the second portion of the storage line extend from the main portion in the second direction. 
 
     
     
       16. The display device of  claim 15 ,
 wherein the storage line further includes a third portion extending from the main portion in the second direction, 
 wherein the third portion of the storage line extends along a second edge of the first pixel electrode opposite to the first edge thereof, and 
 wherein the first portion and the third portion are spaced apart from each other in the first direction. 
 
     
     
       17. A display device, comprising:
 a first substrate comprising a first pixel and a second pixel, wherein the first pixel and the second pixel display different colors from each other; 
 a second substrate facing the first substrate; 
 a light amount control layer positioned between the first substrate and the second substrate; 
 a first light conversion unit positioned between the light amount control layer and the second substrate, the first light conversion unit overlapping a first pixel electrode of the first pixel; 
 a second light conversion unit positioned between the light amount control layer and the second substrate, the second light conversion unit overlapping a second pixel electrode of the second pixel; and 
 a black matrix disposed on the second substrate and having a first opening overlapping the first pixel and a second opening overlapping the second pixel, 
 wherein an area of the first opening is greater than an area of the second opening, and 
 wherein a ratio of the second light conversion unit relative to the second pixel electrode is less than a ratio of the first light conversion unit relative to the first pixel electrode. 
 
     
     
       18. The display device of  claim 17 , wherein the first substrate further comprises a third pixel displaying a color different from a color of the first pixel and a color of the second pixel,
 wherein a third light conversion unit positioned between the light amount control layer and the second substrate, the third light conversion unit overlapping a third pixel electrode of the third pixel, 
 wherein the black matrix has a third opening corresponding to the third pixel, and 
 wherein an area of the third opening has is different than the area of the first opening and the area of the second opening. 
 
     
     
       19. The display device of  claim 18 , wherein the first pixel displays a red color,
 wherein the second pixel displays a green color, and 
 wherein the third pixel displays a blue color. 
 
     
     
       20. The display device of  claim 19 , wherein an area ratio of the first opening, the second opening and the third opening is about 1.1 to 1.3:1:0.7 to 0.9. 
     
     
       21. The display device of  claim 18 , wherein a ratio of the third light conversion unit relative to the second pixel electrode is less than the ratio of the second light conversion unit relative to the second pixel electrode. 
     
     
       22. The display device of  claim 18 , wherein a thickness of the black matrix is less than a thickness of at least one of the first and second light conversion units. 
     
     
       23. A display device, comprising:
 a first substrate comprising a first pixel and a second pixel, wherein the first pixel and the second pixel display different colors from each other; 
 a second substrate facing the first substrate; 
 a light amount control layer positioned between the first substrate and the second substrate; 
 a gate line disposed on the first substrate and extending in a first direction; 
 a storage line disposed on the first substrate and spaced apart from the gate line; and 
 first and second data lines disposed on the first substrate and extending in a second direction intersecting the first direction, 
 wherein the first pixel comprises: 
 a first thin film transistor connected to the gate line and the first data line; 
 a first pixel electrode connected to the first thin film transistor; and 
 a first light conversion unit disposed on the second substrate and overlapping the first pixel electrode, 
 wherein the second pixel comprises: 
 a second thin film transistor connected to the gate line and the second data line; 
 a second pixel electrode connected to the second thin film transistor; and 
 a second light conversion unit disposed on the second substrate and overlapping the second pixel electrode, 
 wherein an area of the first pixel electrode is greater than an area of the second pixel electrode, 
 wherein an overlap area between the first pixel electrode and the storage line is less than an overlap area between the second pixel electrode and the storage line. 
 
     
     
       24. A display device, comprising:
 a first substrate comprising a first pixel displaying a red color, a second pixel displaying a green color and a third pixel displaying a blue color; 
 a second substrate facing the first substrate; 
 a light amount control layer positioned between the first substrate and the second substrate; 
 a gate line disposed on the first substrate and extending in a first direction; 
 a storage line disposed on the first substrate and spaced apart from the gate line; and 
 first, second and third data lines disposed on the first substrate and extending in a second direction intersecting the first direction, 
 wherein the first pixel comprises: 
 a first thin film transistor connected to the gate line and the first data line; 
 a first pixel electrode connected to the first thin film transistor; and 
 a first light conversion unit disposed on the second substrate and overlapping the first pixel electrode, 
 wherein the second pixel comprises: 
 a second thin film transistor connected to the gate line and the second data line; 
 a second pixel electrode connected to the second thin film transistor; and 
 a second light conversion unit disposed on the second substrate and overlapping the second pixel electrode, 
 wherein the third pixel comprises: 
 a third thin film transistor connected to the gate line and the third data line; 
 a third pixel electrode connected to the third thin film transistor; and 
 a third light conversion unit disposed on the second substrate and overlapping the third pixel electrode, 
 wherein an area of the first pixel electrode is greater than an area of the second pixel electrode, 
 wherein the area of the second pixel electrode is greater than an area of the third pixel electrode, 
 wherein an overlap area between the first pixel electrode and the storage line and an overlap area between the second pixel electrode and the storage line are different from each other, 
 wherein an overlap area between the third pixel electrode and the storage line is different from the overlap area between the first pixel electrode and the storage line and the overlap area between the second pixel electrode and the storage line, and 
 wherein the overlap area between the second pixel electrode and the storage line is less than the overlap area between the third pixel electrode and the storage line.