Semiconductor memory device

Abstract

The present technology relates to a semiconductor memory device. The semiconductor memory device includes a plurality of channel plugs disposed in a cell region of a semiconductor substrate, a first dummy region disposed at one end portion of the cell region and a second dummy region disposed at an other end portion of the cell region, and first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region. The number of the first dummy plugs is different than the number of the second dummy plugs.

What is claimed is: 
     
       1. A semiconductor memory device comprising:
 a plurality of channel plugs disposed in a cell region of a semiconductor substrate; 
 a first dummy region disposed at one end portion of the cell region and a second dummy region disposed at an other end portion of the cell region; and 
 first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region, 
 wherein a number of the first dummy plugs is different than a number of the second dummy plugs. 
 
     
     
       2. The semiconductor memory device of  claim 1 , further comprising:
 an X decoder region adjacent to the first dummy region, wherein the X decoder region and the cell region are disposed at opposing sides of the first dummy region. 
 
     
     
       3. The semiconductor memory device of  claim 2 , further comprising:
 an X decoder disposed in the X decoder region of the semiconductor substrate. 
 
     
     
       4. The semiconductor memory device of  claim 3 , wherein the X decoder is formed in a layer lower than the first dummy plugs, the plurality of channel plugs, and the second dummy plugs. 
     
     
       5. The semiconductor memory device of  claim 4 , wherein the plurality of channel plugs are connected, in parallel, to a plurality of word lines, and
 the plurality of word lines are connected to the X decoder through a plurality of metal wires, extending, in a vertical direction, to the X decoder region. 
 
     
     
       6. The semiconductor memory device of  claim 5 , wherein the plurality of word lines are arranged in a step-wise structure in the X decoder region. 
     
     
       7. The semiconductor memory device of  claim 6 , wherein the X decoder region further includes an interlayer insulating film stacked on the plurality of word lines of the step-wise structure. 
     
     
       8. The semiconductor memory device of  claim 1 , wherein the number of the first dummy plugs is greater than the number of the second dummy plugs. 
     
     
       9. The semiconductor memory device of  claim 1 , wherein the first dummy region is wider than the second dummy region. 
     
     
       10. A semiconductor memory device comprising:
 a decoder region, a first dummy region, a cell region, and a second dummy region sequentially arranged, respectively, in a first direction of a semiconductor substrate; 
 a plurality of channel plugs vertically arranged in the cell region; and 
 a plurality of first and second dummy plugs arranged in the first dummy region and the second dummy region respectively, 
 wherein a number of the first dummy plugs is greater than a number of the second dummy plugs. 
 
     
     
       11. The semiconductor memory device of  claim 10 , wherein the decoder region is an X decoder region, and
 wherein an X decoder is disposed in the X decoder region. 
 
     
     
       12. The semiconductor memory device of  claim 11 , wherein the X decoder is formed in a layer lower than the plurality of channel plugs, the first dummy plugs, and the second dummy plugs. 
     
     
       13. The semiconductor memory device of  claim 12 , wherein the plurality of channel plugs are connected, in parallel, to a plurality of word lines, and
 the plurality of word lines are connected to the X decoder through a plurality of metal wires, extending, in a vertical direction, to the X decoder region. 
 
     
     
       14. The semiconductor memory device of  claim 13 , wherein the plurality of word lines are arranged in a step-wise structure in the X decoder region. 
     
     
       15. The semiconductor memory device of  claim 14 , wherein the X decoder region further includes an interlayer insulating film stacked on the plurality of word lines of the step-wise structure. 
     
     
       16. A semiconductor memory device comprising:
 a decoder region, a first dummy region, a cell region, and a second dummy region sequentially arranged, respectively, in a first direction of a semiconductor substrate; 
 a plurality of channel plugs vertically arranged in the cell region; and 
 a plurality of dummy plugs arranged in the first dummy region and the second dummy region, 
 wherein the first dummy region is wider than the second dummy region. 
 
     
     
       17. The semiconductor memory device of  claim 16 , wherein the number of first dummy plugs disposed in the first dummy region of the plurality of dummy plugs is greater than the number of second dummy plugs disposed in the second dummy region. 
     
     
       18. The semiconductor memory device of  claim 17 , wherein the decoder region is an X decoder region,
 wherein an X decoder is disposed in the X decoder region, and 
 wherein the X decoder is formed in a layer lower than the plurality of channel plugs, the first dummy plugs, and the second dummy plugs. 
 
     
     
       19. The semiconductor memory device of  claim 18 , wherein the plurality of channel plugs are connected, in parallel, to a plurality of word lines, and
 the plurality of word lines are connected to the X decoder through a plurality of metal wires, extending, in a vertical direction, to the X decoder region. 
 
     
     
       20. The semiconductor memory device of  claim 19 , wherein the X decoder region further includes an interlayer insulating film stacked on the plurality of word lines.