Imaging device module, imaging system, imaging device package, and manufacturing method

Abstract

According to the disclosure, a relationship of Tgp>Tgf, αf1<αPCB1, and (Tgp−To)×αPCB1<(Tgf−To)×αf1+(Tgp−Tgf)×αf2 or a relationship of Tgp<Tgf, αPCB1<αf1, and (Tgf−To)×αf1<(Tgp−To)×αPCB1+(Tgf−Tgp)×αPCB2 is satisfied, where linear expansion coefficients in an in-plane direction of the substrate at a temperature below a glass transition temperature Tgp of the substrate and at a temperature above the glass transition temperature Tgp of the substrate are denoted as αPCB1 and αPCB2, respectively, linear expansion coefficient of the frame at a temperature below a glass transition temperature Tgf of the frame and at a temperature above the glass transition temperature Tgf of the frame are denoted as αf1 and αf2, respectively, and a room temperature is denoted as To.

What is claimed is: 
     
       1. An imaging device module comprising:
 a substrate having a first primary surface, a second primary surface, and an outer edge continuous to the first primary surface and the second primary surface and including a plurality of conductor layers and a plurality of insulating layers; 
 a solid state imaging device attached to the first primary surface; 
 a frame attached to the first primary surface so as to surround a circumference of the solid state imaging device; and 
 a light transmitting member fixed on the frame, 
 wherein a relationship of
     Tgp>Tgf,    
   α f 1<α PCB 1, and
 
   ( Tgp−To )×α PCB 1<( Tgf−To )×α f 1+( Tgp−Tgf )×α f 2
 
   or a relationship of 
     Tgp<Tgf,    
   α PCB 1<α f 1, and
 
   ( Tgf−To )×α f 1<( Tgp−To )×α PCB 1+( Tgf−Tgp )×α PCB 2
 
 
 is satisfied, wherein a linear expansion coefficient in an in-plane direction of the substrate at a temperature below a glass transition temperature Tgp of the substrate is denoted as αPCB1, a linear expansion coefficient in the in-plane direction of the substrate at a temperature above the glass transition temperature Tgp is denoted as αPCB2, a linear expansion coefficient of the frame at a temperature below a glass transition temperature Tgf of the frame is denoted as αf1, a linear expansion coefficient of the frame at a temperature above the glass transition temperature Tgf is denoted as αf2, and a room temperature is denoted as To. 
 
     
     
       2. The imaging device module according to  claim 1 , wherein the glass transition temperature Tgp is higher than the glass transition temperature Tgf, and the frame is molded on the substrate. 
     
     
       3. The imaging device module according to  claim 1 , wherein the linear expansion coefficient αPCB1 and the linear expansion coefficient αf1 are smaller than a linear expansion coefficient αL in an in-plane direction of the light transmitting member and larger than a linear expansion coefficient αc in an in-plane direction of the solid state imaging device. 
     
     
       4. The imaging device module according to  claim 1 , wherein the substrate is a printed board containing a prepreg. 
     
     
       5. The imaging device module according to  claim 1 , wherein the frame contains a resin. 
     
     
       6. The imaging device module according to  claim 1 , wherein the solid state imaging device is attached by an adhesive agent to the first primary surface. 
     
     
       7. The imaging device module according to  claim 6 , wherein the adhesive agent is a resin having rubber elasticity. 
     
     
       8. The imaging device module according to  claim 1 , wherein the frame covers the outer edge of the substrate. 
     
     
       9. The imaging device module according to  claim 1 , wherein the frame does not cover the outer edge of the substrate. 
     
     
       10. An imaging system comprising a signal processing device that processes pixel signals output from the solid state imaging device according to  claim 1 . 
     
     
       11. The imaging system according to  claim 10 , further comprising:
 a detection unit that detects motion of the imaging system; and 
 an actuator that displaces the imaging device module based on a signal from the detection unit. 
 
     
     
       12. The imaging system according to  claim 10 ,
 wherein the solid state imaging device comprises a plurality of pixels, 
 wherein each of the pixels has a plurality of photoelectric conversion portions, and 
 wherein the signal processing device processes the pixel signals generated by the plurality of photoelectric conversion portions, respectively, and acquires information based on a distance from the solid state imaging device to a subject. 
 
     
     
       13. An imaging device package comprising:
 a substrate having a first primary surface, a second primary surface, and an outer edge continuous to the first primary surface and the second primary surface and including a plurality of conductor layers and a plurality of insulating layers; and 
 a frame attached to the first primary surface, 
 wherein a relationship of
     Tgp>Tgf,    
   α f 1<α PCB 1, and
 
   ( Tgp−To )×α PCB 1<( Tgf−To )×α f 1+( Tgp−Tgf )×α f 2
 
   or a relationship of 
     Tgp<Tgf,    
   α PCB 1<α f 1, and
 
   ( Tgf−To )×α f 1<( Tgp−To )×α PCB 1+( Tgf−Tgp )×α PCB 2
 
 
 is satisfied, wherein a linear expansion coefficient in an in-plane direction of the substrate at a temperature below a glass transition temperature Tgp of the substrate is denoted as αPCB1, a linear expansion coefficient in the in-plane direction of the substrate at a temperature above the Tgp is denoted as αPCB2, a linear expansion coefficient of the frame at a temperature below a glass transition temperature Tgf of the frame is denoted as αf1, a linear expansion coefficient of the frame at a temperature above the Tgf is denoted as αf2, and a room temperature is denoted as To. 
 
     
     
       14. A manufacturing method of an imaging device module, the manufacturing method comprising steps of:
 preparing a substrate having a first primary surface, a second primary surface, and an outer edge continuous to the first primary surface and the second primary surface and including a plurality of conductor layers and a plurality of insulating layers; 
 attaching a solid state imaging device to the first primary surface; 
 attaching a frame to the first primary surface so as to surround a circumference of the solid state imaging device; and 
 attaching a light transmitting member on the frame, 
 wherein a relationship of
     Tgp>Tgf,    
   α f 1<α PCB 1, and
 
   ( Tgp−To )×α PCB 1<( Tgf−To )×α f 1+( Tgp−Tgf )×α f 2
 
   or a relationship of 
     Tgp<Tgf,    
   α PCB 1<α f 1, and
 
   ( Tgf−To )×α f 1<( Tgp−To )×α PCB 1+( Tgf−Tgp )×α PCB 2
 
 
 is satisfied, wherein a linear expansion coefficient in an in-plane direction of the substrate at a temperature below a glass transition temperature Tgp of the substrate is denoted as αPCB1, a linear expansion coefficient in the in-plane direction of the substrate at a temperature above the glass transition temperature Tgp is denoted as αPCB2, a linear expansion coefficient of the frame at a temperature below a glass transition temperature Tgf of the frame is denoted as αf1, a linear expansion coefficient of the frame at a temperature above the glass transition temperature Tgf is denoted as αf2, and a room temperature is denoted as To, and 
 wherein the step of attaching the frame to the substrate is performed at a temperature between the glass transition temperature Tgp and the glass transition temperature Tgf. 
 
     
     
       15. The manufacturing method of the imaging device module according to  claim 14 , wherein the glass transition temperature Tgp is higher than the glass transition temperature Tgf, and the frame is molded on the substrate at a temperature between the glass transition temperature Tgp and the glass transition temperature Tgf.