Solid-state imaging device

Abstract

According to one embodiment, a solid-state imaging device includes a substrate, a light receiving pixel, a first interconnection layer, a light shielding layer, and a first metal film. The substrate includes a sensor region and a circuit region. The light receiving pixel is provided on a surface of the sensor region of the substrate. The first interconnection layer is provided in the sensor region. The light shielding layer is provided in the sensor region and has a larger width than the first interconnection. The first metal film is provided on at least one of an upper surface or a lower surface of the light shielding layer. The first metal film partially covers at least one of the upper surface or the lower surface.

What is claimed is: 
     
       1. A solid-state imaging device, comprising:
 a substrate including a sensor region and a circuit region; 
 a light receiving pixel provided on a surface of the sensor region of the substrate; 
 a first interconnection layer provided in the sensor region; 
 a light shielding layer provided in the sensor region and having a larger width than the first interconnection; 
 a first metal film provided on at least one of an upper surface or a lower surface of the light shielding layer, the first metal film partially covering at least one of the upper surface or the lower surface; 
 a second interconnection layer provided in the circuit region; and 
 a second metal film provided on at least one of an upper surface or a lower surface of the second interconnection layer. 
 
     
     
       2. The device according to  claim 1 , wherein the second metal film covers an entire surface of at least one of the upper surface or the lower surface of the second interconnection layer. 
     
     
       3. The device according to  claim 1 , wherein the light shielding layer and the second interconnection layer are provided on a layer at a same height. 
     
     
       4. The device according to  claim 1 , wherein the first metal film and the second metal film are same type of films. 
     
     
       5. The device according to  claim 4 , wherein the first metal film and the second metal film include titanium. 
     
     
       6. The device according to  claim 1 , further comprising an insulating film covering the light shielding layer, the insulating film including hydrogen. 
     
     
       7. The device according to  claim 1 , wherein the first interconnection layer and the light shielding layer include aluminum, and the first metal film includes titanium. 
     
     
       8. The device according to  claim 1 , wherein the substrate is a silicon substrate. 
     
     
       9. The device according to  claim 1 , wherein the light shielding layer is provided above the first interconnection layer. 
     
     
       10. The device according to  claim 1 , wherein the device is a linear sensor in which a plurality of light receiving pixels are arranged in one direction. 
     
     
       11. A solid-state imaging device, comprising:
 a substrate including a sensor region and a circuit region; 
 a light receiving pixel provided on a surface of the sensor region of the substrate; 
 a first interconnection layer provided in the sensor region; 
 a light shielding layer provided in the sensor region and having a larger width than the first interconnection; 
 a first metal film provided on at least one of an upper surface or a lower surface of the light shielding layer, the first metal film partially covering at least one of the upper surface or the lower surface; and 
 a third metal film covering all of an upper surface and a lower surface of the first interconnection layer. 
 
     
     
       12. The device according to  claim 11 , wherein the first metal film and the third metal film are same type of films. 
     
     
       13. The device according to  claim 12 , wherein the first metal film and the third metal film include titanium.