Imaging device including photoelectric converter and capacitor with a capacitor and a switching element connected in series between a first electrode of a photoelectric converter and a voltage source or a ground

Abstract

An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.

What is claimed is: 
     
       1. An imaging device comprising:
 a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode; 
 a first transistor that has a gate connected to the first electrode; and 
 a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground. 
 
     
     
       2. The imaging device according to  claim 1 , wherein a first conversion gain in a first mode in which the switching element is in OFF-state is greater than a second conversion gain in a second mode in which the switching element is in ON-state. 
     
     
       3. The imaging device according to  claim 1 , wherein a first S/N ratio in a first mode in which the switching element is in OFF-state is greater than a second S/N ratio in a second mode in which the switching element is in ON-state. 
     
     
       4. The imaging device according to  claim 1 , wherein a first sensitivity in a first mode in which the switching element is in OFF-state is greater than a second sensitivity in a second mode in which the switching element is in ON-state. 
     
     
       5. The imaging device according to  claim 1 , further comprising a control circuit that causes the switching element to be switched between ON-state and OFF-state. 
     
     
       6. An imaging device comprising:
 a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode; 
 a charge storage unit for storing signal charges generated by the photoelectric converter; 
 a first transistor for resetting a potential of the charge storage unit; and 
 a first capacitor and a switching element that are connected, in series, between the charge storage unit and either a voltage source or a ground. 
 
     
     
       7. The imaging device according to  claim 6 , further comprising a second transistor that has a gate connected to the charge storage unit. 
     
     
       8. The imaging device according to  claim 6 , wherein a first conversion gain in a first mode in which the switching element is in OFF-state is greater than a second conversion gain in a second mode in which the switching element is in ON-state. 
     
     
       9. The imaging device according to  claim 6 , wherein a first S/N ratio in a first mode in which the switching element is in OFF-state is greater than a second S/N ratio in a second mode in which the switching element is in ON-state. 
     
     
       10. The imaging device according to  claim 6 , wherein a first sensitivity in a first mode in which the switching element is in OFF-state is greater than a second sensitivity in a second mode in which the switching element is in ON-state. 
     
     
       11. The imaging device according to  claim 6 , further comprising a control circuit that causes the switching element to be switched between ON-state and OFF-state.