P
US10794854B2ActiveUtilityPatentIndex 41

Measurement device

Assignee: LAPIS SEMICONDUCTOR CO LTDPriority: Oct 27, 2017Filed: Oct 25, 2018Granted: Oct 6, 2020
Est. expiryOct 27, 2037(~11.3 yrs left)· nominal 20-yr term from priority
Inventors:OKADA ATSUHIKOONITSUKA KAYOKO
G01N 33/24G01N 27/414G01N 27/4167
41
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Cited by
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References
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Claims

Abstract

There is provided a measurement device including: a first electrode and a second electrode that are configured to form an energization path via a measurement object at a front side and measure an electrical conductivity of the measurement object; and a reference electrode and an ISFET that are configured to measure a pH value of the measurement object, wherein a standard electrode of the reference electrode is disposed at a rear side of the first electrode and the second electrode.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A measurement device comprising:
 a first electrode and a second electrode that are configured to form an energization path via a measurement object at a front side and measure an electrical conductivity of the measurement object; and 
 a reference electrode and an ISFET that are configured to measure a pH value of the measurement object, 
 wherein a standard electrode of the reference electrode is disposed at a rear side of the first electrode and the second electrode. 
 
     
     
       2. The measurement device according to  claim 1 , wherein, with respect to a virtual line that vertically cuts a housing passing through a vertex or a top surface of the housing, the first electrode and the second electrode are provided on a first surface at one side in an intersecting direction intersecting with the virtual line and the standard electrode of the reference electrode is provided on a second surface at another side in the intersecting direction. 
     
     
       3. The measurement device according to  claim 2 , wherein the ISFET is provided on the first surface. 
     
     
       4. The measurement device according to  claim 3 , wherein a sensitive surface of the ISFET is positioned closer to the first surface than a top surface of the first electrode and a top surface of the second electrode. 
     
     
       5. The measurement device according to  claim 1 , further comprising
 an acquisition unit that is configured to apply an alternating-current signal to the first electrode and measure a phase difference of an alternating-current signal that is input to the second electrode via the measurement object to acquire an electrical conductivity of the measurement object. 
 
     
     
       6. A measurement device comprising:
 a first electrode that has a front surface contacting a measurement object and outputs an alternating-current signal; 
 a second electrode that has a front surface contacting the measurement object and receives the alternating-current signal output from the first electrode as an input signal; and 
 a reference electrode disposed closer to a rear surface of the first electrode than a first virtual plane that forms the same plane as the front surface of the first electrode and closer to a rear surface of the second electrode than a second virtual plane that forms the same plane as the front surface of the second electrode. 
 
     
     
       7. The measurement device according to  claim 6 , wherein a standard electrode of the reference electrode is disposed closer to a rear surface of the first electrode than a first virtual plane that forms the same plane as the front surface of the first electrode and closer to a rear surface of the second electrode than a second virtual plane that forms the same plane as the front surface of the second electrode.

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