Organic photoelectric device and image sensor and electronic device
Abstract
Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm 2 (° C.)− Ts 2(10) (° C.)≥ Tm 1 (° C.)− Ts 1(10) (° C.) [Relationship Equation 1]
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. An organic photoelectric device, comprising
a first electrode and a second electrode facing each other, and
a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer selectively absorbing light in a green wavelength region
wherein the photoelectric conversion layer includes first and second photoelectric conversion materials,
a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and
the first and second photoelectric conversion materials satisfy Relationship Equation 1:
Tm 2 (° C.)− Ts 2(10) (° C.)≥ Tm 1 (° C.)− Ts 1(10) (° C.) [Relationship Equation 1]
wherein, in Relationship Equation 1,
Tm 1 is a melting point of the first photoelectric conversion material,
Tm 2 is a melting point of the second photoelectric conversion material,
Ts 1(10) is a temperature where 10 wt % weight loss occurs due to sublimation of the first photoelectric conversion material at 10 Pa, and
Ts 2(10) is a temperature where 10 wt % weight loss occurs due to sublimation of the second photoelectric conversion material at 10 Pa.
2. The organic photoelectric device of claim 1 , wherein the second photoelectric conversion material satisfies Relationship Equation 1a:
Tm 2 (° C.)−Ts 2(10) (° C.)≥75° C. [Relationship Equation 1a]
wherein, in Relationship Equation 1a,
Tm 2 is a melting point of the second photoelectric conversion material, and
Ts 2(10) is a temperature where 10 wt % weight loss occurs due to sublimation of the second photoelectric conversion material at 10 Pa.
3. The organic photoelectric device of claim 2 , wherein the first photoelectric conversion material satisfies Relationship Equation 1b:
Tm 1 (° C.)− Ts 1(10) (° C.)<75° C. [Relationship Equation 1b]
wherein, in Relationship Equation 1b,
T m1 is a melting point of the first photoelectric conversion material, and
T s1 10 is a temperature where 10 wt % weight loss occurs due to sublimation of the first photoelectric conversion material at 10 Pa.
4. The organic photoelectric device of claim 1 , wherein the first and second photoelectric conversion materials satisfies Relationship Equation 2:
Tm 2 (° C.)− Ts 2(50) (° C.)≥ Tm 1 (° C.)− Ts 1(50) (° C.) [Relationship Equation 2]
wherein, in Relationship Equation 2,
T m i is a melting point of the first photoelectric conversion material,
T m2 is a melting point of the second photoelectric conversion material,
T s1(50) ) is a temperature where 50 wt % weight loss occurs due to sublimation of the first photoelectric conversion material at 10 Pa, and
T s2(50) is a temperature where 50 wt % weight loss occurs due to sublimation of the second photoelectric conversion material at 10 Pa.
5. The organic photoelectric device of claim 4 , wherein the second photoelectric conversion material satisfies Relationship Equation 2a:
Tm 2 (° C.)− Ts 2(50) (° C.)≥48° C. [Relationship Equation 2a]
wherein, in Relationship Equation 2a,
T m2 is a melting point of the second photoelectric conversion material, and
T s2(50) is a temperature where 50 wt % weight loss occurs due to sublimation of the second photoelectric conversion material at 10 Pa.
6. The organic photoelectric device of claim 5 , wherein the first photoelectric conversion material satisfies Relationship Equation 2b:
Tm 1 (° C.)− Ts 1(50) (° C.)≤45° C. [Relationship Equation 2b]
wherein, in Relationship Equation 2b,
T m1 i is a melting point of the first photoelectric conversion material, and
T s1(50) is a temperature where 50 wt % weight loss occurs due to sublimation of the first photoelectric conversion material at 10 Pa.
7. The organic photoelectric device of claim 1 , wherein the light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is less than or equal to about 110 nm.
8. The organic photoelectric device of claim 1 , wherein external quantum efficiency in a 450 nm wavelength of the first photoelectric conversion material is lower than external quantum efficiency in a 450 nm wavelength of the second photoelectric conversion material.
9. The organic photoelectric device of claim 1 , wherein the first and second photoelectric conversion materials have each peak absorption wavelength (λ max ) in a region of about 530 nm to about 570 nm.
10. The organic photoelectric device of claim 1 , wherein the first and second photoelectric conversion materials are independently represented by Chemical Formula 1:
EDG−HA−EAG [Chemical Formula 1]
wherein, in Chemical Formula 1,
HA is a C2 to C30 heterocyclic group including at least one of Se, Te, S, and Si,
EDG is an electron donating group, and
EAG is an electron accepting group.
11. The organic photoelectric device of claim 10 , wherein the second photoelectric conversion material represented by the Chemical Formula 1 is represented by Chemical Formula 1b:
wherein, in Chemical Formula 1b,
X 1 is Se, Te, O, S, SO, or SO2,
Ar 3 is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of the foregoing two or more,
R 1 to R 3 are independently one of hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, a cyano-containing group, and a combination thereof,
G is one of a single bond, —O—, —S—, —Se—, —N═, —(CR f R g ) k —, —NR h —, —GeR k R l —, —(C(R m )═C(R h ))—, and SnR o R p , wherein R f , R g , R h , R i , R j , R k , R m , R o , and R p are independently one of hydrogen, a halogen, a substituted or unsubstituted C1 to C10alkyl group, a substituted or unsubstituted C1 to C10 alkoxy group, and a substituted or unsubstituted C6 to C12 aryl group, R f and R g , R i and R j , R k and R l , R m and R n , and R o and R p are independently present alone or linked with each other to provide a ring, and k is 1 or 2,
R 6a to R 6d and R 7a to R 7d are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, a cyano-containing group, and a combination thereof,
R 6a to R 6d are independently present alone or adjacent two thereof are linked with each other to form a fused ring, and R 7a to R 7d are independently present alone or adjacent two thereof are linked with each other to form a fused ring.
12. The organic photoelectric device of claim 11 , wherein Ar 3 of Chemical Formula 1b is benzene, naphthylene, anthracene, thiophene, selenophene, tellurophene, pyridine, pyrimidine, or a fused ring of the foregoing two or more.
13. The organic photoelectric device of claim 1 , wherein the first and second photoelectric conversion materials are included in a weight ratio of about 50:50 to about 95:5.
14. The organic photoelectric device of claim 1 , wherein the photoelectric conversion layer includes at least one p-type semiconductor and at least one n-type semiconductor to form a pn junction, and
each of the first and second photoelectric conversion material is the p-type semiconductor.
15. The organic photoelectric device of claim 14 , wherein the n-type semiconductor includes fullerene or a fullerene derivative.
16. An image sensor comprising the organic photoelectric device of claim 1 .
17. The image sensor of claim 16 , further comprising a semiconductor substrate under the organic photoelectric device, and
the semiconductor substrate includes
a first photo-sensing device configured to sense light in a red wavelength region, and
a second photo-sensing device configured to sense light in a blue wavelength region.
18. The image sensor of claim 16 , wherein the organic photoelectric device is a first organic photoelectric device, the image sensor further comprising:
a second organic photoelectric device configured to sense light in a red wavelength region, and
a third organic photoelectric device configured to sense light in a blue wavelength region.
19. An electronic device comprising the image sensor of claim 16 .
20. An electronic device comprising the organic photoelectric device of claim 1 .Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.