Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device includes a semiconductor layer, having a major surface and generating light, a light transmitting layer, having alight transmitting property and covering the major surface of the semiconductor layer, a light reflecting layer, having a light reflecting property and covering the light transmitting layer, and a bonding material diffusion region, formed in a surface layer portion of the light reflecting layer in a boundary portion between the light transmitting layer and the light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than an element constituting the light reflecting layer.

What is claimed is: 
     
       1. A semiconductor light-emitting device comprising:
 a semiconductor layer, having a major surface and generating light; 
 a light transmitting layer, having a light transmitting property and covering the major surface of the semiconductor layer; 
 a light reflecting layer, having a light reflecting property and covering the light transmitting layer; and 
 a bonding material diffusion region, formed in a surface layer portion of the light reflecting layer in a boundary portion between the light transmitting layer and the light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than an element constituting the light reflecting layer, wherein 
 the light transmitting layer has a bonding surface bonded to the light reflecting layer, 
 the bonding material diffusion region is formed in the surface layer portion of the light reflecting layer in the boundary portion between the light transmitting layer and the light reflecting layer such that the bonding material diffusion region is in contact with a whole area of the bonding surface of the light transmitting layer. 
 
     
     
       2. The semiconductor light-emitting device according to  claim 1 , further comprising: a bonding material layer, covering the light reflecting layer such that the bonding material layer faces the light transmitting layer across the light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than the element constituting the light reflecting layer. 
     
     
       3. The semiconductor light-emitting device according to  claim 2 , wherein the bonding material diffusion region contains an element constituted of the same element species as the element contained in the bonding material layer. 
     
     
       4. The semiconductor light-emitting device according to  claim 2 , wherein the bonding material layer is formed as an element supply source that supplies, by diffusion, the element having the property of being high in adhesion force with respect to the light transmitting layer to the surface layer portion of the light reflecting layer, and
 the bonding material diffusion region contains the element diffused from the bonding material layer to the surface layer portion of the light reflecting layer. 
 
     
     
       5. The semiconductor light-emitting device according to  claim 1 , wherein the light reflecting layer contains gold. 
     
     
       6. The semiconductor light-emitting device according to  claim 1 , wherein the light transmitting layer contains indium tin oxide, and
 the bonding material diffusion region contains chromium as the element having the property of being high in adhesion force with respect to the light transmitting layer. 
 
     
     
       7. The semiconductor light-emitting device according to  claim 1 , wherein the light transmitting layer contains one of either or both of silicon oxide and silicon nitride, and
 the bonding material diffusion region contains beryllium as the element having the property of being high in adhesion force with respect to the light transmitting layer. 
 
     
     
       8. A semiconductor light-emitting device comprising:
 a non-light-emitting body portion, including a substrate, having a first front surface at one side and a first rear surface at another side, and a first light reflecting layer, having a light reflecting property and covering the first front surface of the substrate; and 
 a light-emitting body portion, including a semiconductor layer, having a second front surface at one side and a second rear surface at another side and generating light, a light transmitting layer, having a light transmitting property and covering the second front surface of the semiconductor layer, a second light reflecting layer, having a light reflecting property and covering the light transmitting layer, and a bonding material diffusion region, formed in a surface layer portion of the second light reflecting layer in a boundary portion between the light transmitting layer and the second light reflecting layer and having an element having a property of being high in adhesion force with respect to the light transmitting layer more so than an element constituting the second light reflecting layer, and being disposed on the non-light-emitting body portion in an orientation where the second front surface of the semiconductor layer faces the first front surface of the substrate of the non-light-emitting body portion, wherein 
 the light transmitting layer has a bonding surface bonded to the second light reflecting layer, 
 the bonding material diffusion region is formed in the surface layer portion of the second light reflecting layer in the boundary portion between the light transmitting layer and the second light reflecting layer such that the bonding material diffusion region is in contact with a whole area of the bonding surface of the light transmitting layer. 
 
     
     
       9. The semiconductor light-emitting device according to  claim 8 , further comprising: a bonding material layer, interposed between the first light reflecting layer of the non-light-emitting body portion and the second light reflecting layer of the light-emitting body portion and containing an element having a property of being high in adhesion force with respect to the light transmitting layer more so than the element constituting the second light reflecting layer. 
     
     
       10. The semiconductor light-emitting device according to  claim 9 , wherein the bonding material diffusion region contains an element constituted of the same element species as the element contained in the bonding material layer. 
     
     
       11. The semiconductor light-emitting device according to  claim 9 , wherein the bonding material layer is formed as an element supply source that supplies, by diffusion, the element having the property of being high in adhesion force with respect to the light transmitting layer to the surface layer portion of the second light reflecting layer, and
 the bonding material diffusion region contains the element diffused from the bonding material layer to the surface layer portion of the second light reflecting layer. 
 
     
     
       12. The semiconductor light-emitting device according to  claim 8 , wherein the second light reflecting layer contains gold. 
     
     
       13. The semiconductor light-emitting device according to  claim 8 , wherein the light transmitting layer contains indium tin oxide, and
 the bonding material diffusion region contains chromium as an element having a property of being high in adhesion force with respect to the indium tin oxide. 
 
     
     
       14. The semiconductor light-emitting device according to  claim 8 , wherein the light transmitting layer contains one of either or both of silicon oxide and silicon nitride, and
 the bonding material diffusion region contains beryllium as an element having a property of being high in adhesion force with respect to the silicon oxide. 
 
     
     
       15. The semiconductor light-emitting device according to  claim 13 , wherein the second light reflecting layer contains gold. 
     
     
       16. The semiconductor light-emitting device according to  claim 8 , wherein the substrate includes a conductor substrate or a semiconductor substrate. 
     
     
       17. The semiconductor light-emitting device according to  claim 8 , further comprising:
 a first electrode, covering the first rear surface of the substrate; and 
 a second electrode, covering the second rear surface of the semiconductor layer. 
 
     
     
       18. The semiconductor light-emitting device according to  claim 2 , further comprising a contact electrode formed inside a contact hole penetrating the light transmitting layer, wherein
 the bonding material diffusion region is formed between the contact electrode and the bonding material layer such that the bonding material diffusion region is in contact with the bonding surface of the light transmitting layer and the contact electrode. 
 
     
     
       19. The semiconductor light-emitting device according to  claim 18 , further comprising an electrode partially formed on a second major surface opposite to the major surface of the semiconductor layer, wherein
 the contact electrode is not overlapped with the electrode in a plan view. 
 
     
     
       20. The semiconductor light-emitting device according to  claim 2 , wherein
 a ratio of a thickness of the bonding material layer with respect to a thickness of the light reflecting layer is not less than 0.5 and not more than 5.0. 
 
     
     
       21. The semiconductor light-emitting device according to  claim 2 , wherein the thickness of the bonding material layer is not less than 0.05 μm and not more than 0.25 μm. 
     
     
       22. The semiconductor light-emitting device according to  claim 2 , wherein the bonding material diffusion region has a concentration gradient where a content percentage of the element of high adhesion force at the light transmitting layer side is lower than a content percentage of the element of high adhesion force at the bonding material layer side. 
     
     
       23. The semiconductor light-emitting device according to  claim 1 , wherein the bonding material diffusion region has no boundary surface with the light transmitting layer extending in a thickness direction of the light transmitting layer. 
     
     
       24. The semiconductor light-emitting device according to  claim 9 , further comprising a contact electrode formed inside a contact hole penetrating the light transmitting layer, wherein
 the bonding material diffusion region is formed between the contact electrode and the bonding material layer such that the bonding material diffusion region is in contact with the bonding surface of the light transmitting layer and the contact electrode. 
 
     
     
       25. The semiconductor light-emitting device according to  claim 24 , further comprising an electrode partially formed on the second rear surface of the semiconductor layer, wherein
 the contact electrode is not overlapped with the electrode in a plan view. 
 
     
     
       26. The semiconductor light-emitting device according to  claim 9 , wherein
 a ratio of a thickness of the bonding material layer with respect to a thickness of the second light reflecting layer is not less than 0.5 and not more than 5.0. 
 
     
     
       27. The semiconductor light-emitting device according to  claim 9 , wherein the thickness of the bonding material layer is not less than 0.05 μm and not more than 0.25 μm. 
     
     
       28. The semiconductor light-emitting device according to  claim 9 , wherein the bonding material diffusion region has a concentration gradient where a content percentage of the element of high adhesion force at the light transmitting layer side is lower than a content percentage of the element of high adhesion force at the bonding material layer side. 
     
     
       29. The semiconductor light-emitting device according to  claim 8 , wherein the bonding material diffusion region has no boundary surface with the light transmitting layer extending in a thickness direction of the light transmitting layer.