Apparatus and method for mass spectrometry, and method for analyzing semiconductor wafer

Abstract

An apparatus for mass spectrometry includes a plate on which a semiconductor wafer including an organic matter is disposed. A hybrid provider provides a ZnO-graphene hybrid to a predetermined region on the semiconductor wafer. A mass analyzer detects the organic matter in the predetermined region using laser desorption/ionization mass spectrometry (LDI-MS).

What is claimed is: 
     
       1. An apparatus for mass spectrometry comprising:
 a plate on which a semiconductor wafer comprising an organic matter is disposed; 
 a hybrid provider that provides a ZnO-graphene hybrid to a predetermined region on the semiconductor wafer; and 
 a mass analyzer that detects the organic matter in the predetermined region using laser desorption/ionization mass spectrometry (LDI-MS). 
 
     
     
       2. The apparatus of  claim 1 , wherein the ZnO-graphene hybrid includes ZnO nanoparticles and reduced graphene oxide (rGO). 
     
     
       3. The apparatus of  claim 2 , wherein the ZnO-graphene hybrid includes 1.5 wt % to 6 wt % of the reduced graphene oxide with respect to 100 wt % of the ZnO-graphene hybrid. 
     
     
       4. The apparatus of  claim 1 , wherein the organic matter has a molecular weight equal to or less than 1,000 Da. 
     
     
       5. The apparatus of  claim 1 , wherein the organic matter comprises at least one of a solid aromatic compound or a solid aliphatic compound. 
     
     
       6. The apparatus of  claim 1 , wherein the hybrid provider provides a suspension in which the ZnO-graphene hybrid is dispersed in the predetermined region. 
     
     
       7. The apparatus of  claim 1 , wherein the hybrid provider provides from 2 ng to 2,000 ng of the ZnO-graphene hybrid per unit area of 0.0225 cm 2  of the predetermined region. 
     
     
       8. The apparatus of  claim 1 , wherein the mass analyzer comprises:
 a light irradiation unit that irradiates light to ionize the organic matter, to generate an ionized organic matter; and 
 an ion detection unit that detects the ionized organic matter and generates mass data of the organic matter. 
 
     
     
       9. An apparatus for mass spectrometry comprising:
 a plate on which a substrate comprising an analyte is disposed; 
 a hybrid provider that provides a ZnO-graphene hybrid to be adsorbed on the analyte, to produce a mixed sample on the substrate; 
 a light irradiation unit that irradiates light to ionize the analyte, to generate an ionized analyte; and 
 an ion detection unit that detects the ionized analyte to generate mass data of the analyte. 
 
     
     
       10. The apparatus of  claim 9 , wherein the analyte comprises a solid organic matter. 
     
     
       11. The apparatus of  claim 9 , wherein the hybrid provider comprises a micropipette. 
     
     
       12. The apparatus of  claim 9 , wherein the light irradiation unit desorbs the analyte from the ZnO-graphene hybrid to ionize the analyte. 
     
     
       13. The apparatus of  claim 9 , wherein the light irradiation unit irradiates a pulsed laser having a wavelength of from 300 nm to 400 nm. 
     
     
       14. The apparatus of  claim 9 , further comprising: an optical system that accelerates the ionized analyte. 
     
     
       15. The apparatus of  claim 9 , further comprising: a temperature controller; and a pressure controller. 
     
     
       16. A method for mass spectrometry comprising:
 preparing a semiconductor wafer comprising an organic matter; 
 providing a ZnO-graphene hybrid to a predetermined region on the semiconductor wafer; and 
 detecting the organic matter in the predetermined region using laser desorption/ionization mass spectrometry (LDI-MS). 
 
     
     
       17. The method of  claim 16 , wherein the providing the ZnO-graphene hybrid comprises
 mixing ZnO nanoparticles with graphene oxide to produce a ZnO-graphene oxide mixture; and 
 reducing the ZnO-graphene oxide mixture. 
 
     
     
       18. The method of  claim 17 , wherein the ZnO-graphene oxide mixture includes from 2 wt % to 8 wt % of the graphene oxide with respect to 100 wt % of the ZnO-graphene oxide mixture. 
     
     
       19. The method of  claim 16 , wherein the providing the ZnO-graphene hybrid comprises providing from 2 ng to 2,000 ng of the ZnO-graphene hybrid per unit area of 0.0225 cm 2  of the predetermined region of the semiconductor wafer. 
     
     
       20. The method of  claim 16 , wherein the providing the ZnO-graphene hybrid comprises providing a suspension in which the ZnO-graphene hybrid is dispersed to the predetermined region of the semiconductor wafer.