Orientation chamber of substrate processing system with purging function

Abstract

An orientation chamber of a semiconductor substrate processing system is provided. The orientation chamber includes a substrate holder, an orientation detector, and a purging system. The substrate holder is configured to hold a substrate. The orientation detector is configured to detect the orientation of the substrate. The purging system is configured to inject a cleaning gas into the orientation chamber and remove contaminants from the substrate.

What is claimed is: 
     
       1. An orientation chamber, comprising:
 a substrate holder configured to hold a substrate; 
 an orientation detector configured to detect an orientation of the substrate; 
 a purging system configured to inject a cleaning gas into the orientation chamber and remove contaminants from the substrate; and 
 a driving mechanism configured to drive the substrate holder to rotate the substrate according to a position signal output from the orientation detector. 
 
     
     
       2. The orientation chamber as claimed in  claim 1 , wherein the purging system comprises a gas inlet pipe configured to inject the cleaning gas into the orientation chamber and direct the cleaning gas to the substrate. 
     
     
       3. The orientation chamber as claimed in  claim 2 , wherein the purging system further comprises a gas outlet pipe configured to remove the cleaning gas from the orientation chamber. 
     
     
       4. The orientation chamber as claimed in  claim 2 , wherein the purging system further comprises a gas regulator installed on the gas inlet pipe and configured to adjust a volume of the cleaning gas supplied into the orientation chamber. 
     
     
       5. The orientation chamber as claimed in  claim 4 , wherein the gas regulator adjusts the volume of the cleaning gas supplied into the orientation chamber according to a detection signal output from a gas detector which indicates a content of a specific gas contaminant outgassed from the substrate. 
     
     
       6. The orientation chamber as claimed in  claim 1 , wherein the cleaning gas is selected from a group consisting of inert gas, reactive gas, and clean dry air. 
     
     
       7. The orientation chamber as claimed in  claim 1 , further comprising an energy source configured to provide energy to the substrate to accelerate an outgassing of chemicals on the substrate. 
     
     
       8. A method of processing a substrate, comprising:
 providing a semiconductor substrate processing system for substrate processing which includes an orientation chamber and a process module; 
 orienting the substrate in the orientation chamber by driving a substrate holder to rotate the substrate according to a position signal output from an orientation detector; 
 processing the substrate in the process module; 
 transferring the processed substrate from the process module to the orientation chamber; and 
 conducting a degassing process in the orientation chamber. 
 
     
     
       9. The method as claimed in  claim 8 , wherein the degassing process is conducted by injecting a first cleaning gas into the orientation chamber to remove a halogen gas outgassed from the processed substrate. 
     
     
       10. The method as claimed in  claim 9 , further comprising a step of injecting the first cleaning gas into the orientation chamber by a purging system in the orientation chamber. 
     
     
       11. The method as claimed in  claim 9 , further comprising a step of detecting a specific halogen within the orientation chamber before the degassing process is conducted. 
     
     
       12. The method as claimed in  claim 9 , wherein the degassing process is conducted by further adjusting a volume of the first cleaning gas injected into the orientation chamber so that it is sufficient to remove the halogen gas from the processed substrate. 
     
     
       13. The method as claimed in  claim 9 , further comprising a step of providing energy to the substrate to accelerate the outgassing of the halogen gas on the substrate during the degassing process, by an energy source provide to the orientation chamber. 
     
     
       14. The method as claimed in  claim 13 , wherein the energy source is selected from a group consisting of an ultraviolet light source, a microwave emitter, a plasma generator, and a heating mechanism. 
     
     
       15. The method as claimed in  claim 8 , further comprising a step of conducting a purging process on the substrate while orienting the substrate in the orientation chamber. 
     
     
       16. The method as claimed in  claim 15 , wherein the purging process is conducted by injecting a second cleaning gas into the orientation chamber to remove particulate contaminants on the substrate. 
     
     
       17. A method of processing a substrate, comprising:
 providing a semiconductor substrate processing system for substrate processing which includes an orientation chamber and a process module; 
 orienting the substrate in the orientation chamber; 
 injecting a first cleaning gas into the orientation chamber to remove particulate contaminants on the substrate while orienting the substrate in the orientation chamber; 
 processing the substrate in the process module; 
 transferring the processed substrate from the process module to the orientation chamber; and 
 injecting a second cleaning gas into the orientation chamber to remove halogen gas outgassed from the processed substrate. 
 
     
     
       18. The method as claimed in  claim 17 , wherein a flow rate of the first cleaning gas injected into the orientation chamber is different from a flow rate of the second cleaning gas injected into the orientation chamber. 
     
     
       19. The method as claimed in  claim 17 , wherein the first cleaning gas is different from the second cleaning gas. 
     
     
       20. The orientation chamber as claimed in  claim 1 , wherein the contaminants comprise particulate contaminants and halogen gas.