Single-component artificial neuron based on Mott insulators, network of artificial neurons and corresponding manufacturing method

Abstract

An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.

The invention claimed is: 
     
       1. An artificial neuron implementing functions of integration, leakage and firing, wherein the artificial neuron consists of:
 a single-component electrical dipole comprising a material belonging to the family of Mott insulators connected to first and second electrical electrodes, the artificial neuron being a Leaky Integrate-and-Fire (LIF) reference model artificial neuron consisting of the single-component electrical dipole. 
 
     
     
       2. The artificial neuron according to  claim 1 , wherein said Mott insulator material comprises:
 a compound of formula AM 4 Q 8 , with A comprising at least one of the following elements: Ga, Ge, Zn; M comprising at least one of the following elements: V, Nb, Ta, Mo: and Q comprising at least one of the following elements: S, Se; or 
 an inorganic compound of formula (V 1-x M x ) 2 O 3 , with 0≤x≤1, M comprising at least one of the following elements: Ti, Cr, Fe, Al, or Ga; or 
 an inorganic compound of NiS 2-x Se x , with 0≤x≤1; or 
 a compound of formula VO 2 ; or 
 an organic Mott insulator compound. 
 
     
     
       3. The artificial neuron according to  claim 1 , wherein the first and second electrical electrodes are each constituted by an electrically conductive material comprising:
 one of the following elements: platinum (Pt), gold (Au), molybdenum (Mo), graphite (C), aluminum (Al), copper (Cu), doped silicon (Si); or 
 one of the following alloys: brass (Cu—Zn), steel (Fe—C), bronze (Cu—Sn); or 
 one of the following transition metal compounds: TiN, TaN, RuO 2 , SrRuO 3 , CuS 2 . 
 
     
     
       4. The artificial neuron according to  claim 1 , wherein said Mott insulator material takes the form of:
 a thin layer; or 
 a block of crystal; or 
 a nanotube; or 
 a nanowire. 
 
     
     
       5. A network of neurons comprising a plurality of artificial neurons, wherein at least one artificial neuron is according to  claim 1 . 
     
     
       6. A neuromorphic electronic circuit comprising a plurality of artificial neurons, wherein at least one artificial neuron is according to  claim 1 . 
     
     
       7. A method for manufacturing an artificial neuron implementing the functions of integration, leakage and firing, wherein the method comprises the following acts:
 obtaining a material belonging to the family of Mott insulators; 
 obtaining a Leaky Integrate-and-Fire (LIF) reference model artificial neuron consisting of
 a single-component electrical dipole by deposition of a layer of conductive material: 
 at a first extremity of said Mott insulator material to form a first electrical electrode, and 
 at a second extremity of said Mott insulator material to form a second electrical electrode. 
 
 
     
     
       8. The method for manufacturing according to  claim 7 , wherein said act of obtaining a material is performed by cutting out a block of Mott insulator crystal, and wherein said act of depositing a layer of conductive material is performed as a function of said cut-out block of crystal. 
     
     
       9. The method for manufacturing according to  claim 7 , wherein said act of obtaining a material is performed by depositing, on a substrate wafer, a thin layer of a Mott insulator material,
 and wherein said act of depositing a layer of conductive material is performed as a function of said deposited thin layer. 
 
     
     
       10. The method for manufacturing according to  claim 7 , wherein said act of obtaining a material is performed by depositing, on a substrate wafer, a nanotube based on a Mott insulator material,
 and wherein said act of depositing a layer of conductive material is performed as a function of said deposited nanotube. 
 
     
     
       11. The method for manufacturing according to  claim 7 , wherein said act of obtaining a material is performed by depositing, on a substrate wafer, a nanowire based on a Mott insulator material,
 and wherein said act of depositing a layer of conductive material is performed as a function of said deposited nanowire.