Magnetic field sensing device and magnetic field sensing apparatus

Abstract

A magnetic field sensing device including a substrate, a plurality of magnetic flux concentrators and a plurality of magneto-resistive sensors and a plurality of magnetic setting structures is provided. The magnetic flux concentrators, the magneto-resistive sensors and the magnetic setting structures are disposed on the substrate. At least a portion of the magneto resistive sensors is disposed at two opposite sides of each of the magnetic flux concentrators. The orthogonal projection regions of each of the magnetic flux concentrators, at least a portion of the magneto-resistive sensors, and each of the magnetic setting structures on the substrate are respectively a first orthogonal projection region, a second orthogonal projection region, and a third orthogonal projection region. The third orthogonal projection region at least overlaps the first orthogonal projection region and at least a portion of the second orthogonal projection region. Furthermore, a magnetic field sensing apparatus is also provided.

What is claimed is: 
     
       1. A magnetic field sensing device, comprising:
 a substrate; 
 a plurality of magnetic flux concentrators, disposed on the substrate, wherein each of the magnetic flux concentrators is extended in a first direction or a second direction, and the magnetic flux concentrators are arranged along the second direction or the first direction; 
 a plurality of magneto-resistive sensors, disposed on the substrate, wherein at least a portion of the magneto-resistive sensors is disposed on two opposite sides of each of the magnetic flux concentrators, each of the magneto-resistive sensors is extended in the first direction or the second direction, the magneto-resistive sensors are arranged along the second direction or the first direction, and a magnetic field sensing axis of the magneto-resistive sensors is parallel with the second direction or the first direction; and 
 a plurality of magnetic setting structures, disposed on the substrate, wherein each of the magnetic setting structures is extended in the second direction or the first direction, and the magnetic setting structures are arranged along the first direction or the second direction, 
 wherein, 
 an orthogonal projection region of each of the magnetic flux concentrators on the substrate is a first orthogonal projection region, 
 an orthogonal projection region of at least a portion of the magneto-resistive sensors on the substrate is a second orthogonal projection region, 
 an orthogonal projection region of each of the magnetic setting structures on the substrate is a third orthogonal projection region, 
 the third orthogonal projection region at least overlaps a portion of the first orthogonal projection region and a portion of the second orthogonal projection region respectively, 
 wherein the first direction is different from the second direction. 
 
     
     
       2. The magnetic field sensing device according to  claim 1 , further comprising:
 a current generator, coupled to the magnetic setting structures, the magnetic setting structures further comprising two magnetic setting structures, and the current generator adapted to supply two currents having opposite current directions to the two magnetic setting structures respectively. 
 
     
     
       3. The magnetic field sensing device according to  claim 1 , further comprising a switching circuit, each of the magnetic flux concentrators having a first side and a second side opposite to each other, wherein,
 a portion of the magneto-resistive sensors located at the first side of each of the magnetic flux concentrators forms a first Wheatstone half bridge, 
 a portion of the magneto-resistive sensors located at the second side of each of the magnetic flux concentrators forms a second Wheatstone half bridge, 
 the switching circuit electrically connects the first Wheatstone half bridge and the second Wheatstone half bridge as at least two Wheatstone full bridges during different time intervals, thereby respectively measuring magnetic field components in two different directions, such that the at least two Wheatstone full bridges output two signals respectively corresponding to the magnetic field components in the two different directions. 
 
     
     
       4. The magnetic field sensing device according to  claim 1 , wherein each of the magnetic flux concentrators has a first side and a second side opposite to each other, wherein,
 a portion of the magneto-resistive sensors located at the first side of each of the magnetic flux concentrators forms a first Wheatstone full bridge, 
 a portion of the magneto-resistive sensors located at the second side of each of the magnetic flux concentrators forms a second Wheatstone frill bridge, 
 wherein the magnetic field sensing device obtain magnetic field components in two different directions according to a first output signal of the first Wheatstone full bridge and a second output signal of the second Wheatstone full bridge. 
 
     
     
       5. The magnetic field sensing device according to  claim 1 , wherein each of the first orthogonal projection regions simultaneously overlaps the third orthogonal projection regions. 
     
     
       6. The magnetic field sensing device according to  claim 1 , wherein each of the first orthogonal projection regions only overlaps one of the third orthogonal projection regions. 
     
     
       7. The magnetic field sensing device according to  claim 1 , wherein the first orthogonal projection regions and the second orthogonal projection regions are staggered. 
     
     
       8. The magnetic field sensing device according to  claim 1 , wherein the magnetic flux concentrators and the magnetic setting structures are disposed at the same side of the magneto-resistive sensors. 
     
     
       9. The magnetic field sensing device according to  claim 1 , wherein the magnetic flux concentrators and the magnetic setting structures are respectively disposed at two opposite sides of the magneto-resistive sensors. 
     
     
       10. A magnetic field sensing apparatus, comprising:
 a substrate; 
 at least one magnetic field sensing device, comprising:
 a plurality of first magnetic flux concentrators, disposed on the substrate, wherein each of the first magnetic flux concentrators is extended in a first direction or a second direction, and the first magnetic flux concentrators are arranged along the second direction or the first direction; 
 a plurality of first magneto-resistive sensors, disposed on the substrate, wherein at least a portion of the first magneto-resistive sensors is disposed at two opposite sides of each of the first magnetic flux concentrators, each of the first magneto-resistive sensors is extended in the first direction or the second direction, the first magneto-resistive sensors are arranged along the second direction or the first direction, and a first magnetic field sensing axis of the first magneto-resistive sensors is parallel with the second direction or the first direction; and 
 a plurality of first magnetic setting structures, disposed on the substrate, wherein each of the first magnetic setting structures is extended in the second direction or the first direction, and the first magnetic setting structures are arranged along the first direction or the second direction, 
 wherein, 
 an orthogonal projection region of each of the first magnetic flux concentrators on the substrate is a first orthogonal projection region, 
 an orthogonal projection region of at least a portion of the first magneto-resistive sensors on the substrate is a second orthogonal projection region, 
 an orthogonal projection region of each of the first magnetic setting structures on the substrate is a third orthogonal projection region, 
 the third orthogonal projection region at least overlaps a portion of the first orthogonal projection region and a portion of the second orthogonal projection region respectively, 
 
 wherein the first direction is different from the second direction. 
 
     
     
       11. The magnetic field sensing apparatus according to  claim 10 , further comprising at least one magnetic sensor, the magnetic sensor comprising a plurality of second magneto-resistive sensors and a plurality of second magnetic setting structures, the second magneto-resistive sensors and the second magnetic setting structures disposed on the substrate, wherein,
 an orthogonal projection region of at least a portion of the second magneto-resistive sensors on the substrate is a fourth orthogonal projection region; 
 an orthogonal projection region of each of the second magnetic setting structures on the substrate is a fifth orthogonal projection region, 
 the fifth orthogonal projection region at least overlaps a portion of the fourth orthogonal projection region. 
 
     
     
       12. The magnetic field sensing apparatus according to  claim 11 , wherein, in one of the magnetic sensors,
 each of the second magnetic setting structures is extended in the first direction or the second direction, and the second magnetic setting structures are arranged along the second direction or the first direction; and 
 each of the second magneto-resistive sensors is extended in the second direction or the first direction, and the second magneto-resistive sensors are arranged along the first direction or the second direction, a second magnetic field sensing axis of the second magneto-resistive sensors are parallel with the first direction or the second direction. 
 
     
     
       13. The magnetic field sensing apparatus according to  claim 10 , wherein each of the first orthogonal projection regions simultaneously overlaps the third orthogonal projection regions. 
     
     
       14. The magnetic field sensing apparatus according to  claim 10 , wherein each of the first orthogonal projection regions only overlaps one of the third orthogonal projection regions. 
     
     
       15. The magnetic field sensing apparatus according to  claim 10 , wherein the first orthogonal projection regions and the second orthogonal projection regions are staggered.