Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element

Abstract

A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

The invention claimed is: 
     
       1. A spin-current magnetization rotational element, comprising:
 a spin orbit torque wiring extending in a first direction; and 
 a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, 
 wherein the spin orbit torque wiring includes a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and 
 the spin orbit torque wiring includes a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side. 
 
     
     
       2. The spin-current magnetization rotational element according to  claim 1 , wherein the second region is positioned outside in the first direction of the first region. 
     
     
       3. The spin-current magnetization rotational element according to  claim 1 , further comprising:
 a via wiring extending in a direction intersecting the first direction from the second surface of the surface of the spin orbit torque wiring, 
 wherein the second region overlaps the via wiring in plan view from the second direction. 
 
     
     
       4. The spin-current magnetization rotational element according to  claim 1 , wherein the depth of the recessed portion of the second region with respect to the first region is less than or equal to the thickness of the spin orbit torque wiring. 
     
     
       5. The spin-current magnetization rotational element according to  claim 1 , wherein the recessed portion in the second region has an inclined surface inclined with respect to the first region on the first surface to be deeper the further away it is from the first region. 
     
     
       6. The spin-current magnetization rotational element according to  claim 5 , wherein, when the thickness of the first ferromagnetic layer is h, the inclination angle of the inclined surface is φ, the shortest distance between the first region and the second region is G, and an incident angle of the ion beam incident on the first ferromagnetic layer with a plane parallel to the first surface in the first region is θ, G>h/tan(θ+2φ) is satisfied. 
     
     
       7. A spin orbit torque type magnetoresistance effect element, comprising:
 the spin-current magnetization rotational element according to  claim 1 ; 
 a non-magnetic layer disposed on a surface of the surface of the first ferromagnetic layer opposite to a surface positioned on the side of the spin orbit torque wiring; and 
 a second ferromagnetic layer sandwiching the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. 
 
     
     
       8. The spin orbit torque type magnetoresistance effect element according to  claim 7 , wherein, when the height of the laminate including the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer is H, an inclination angle of an inclined surface inclined with respect to the first surface to be deeper the further away it is from the first region in the second region is φ, a shortest distance between the first region and the second region is G, and an incident angle of the ion beam incident on the first ferromagnetic layer with a plane parallel to the first surface in the first region is θ, G>H/tan(θ+2φ) is satisfied. 
     
     
       9. A method for manufacturing the spin-current magnetization rotational element according to  claim 1 , comprising the processes of:
 preparing a substrate having a plurality of recessed portions arranged in one direction on one main surface and forming a layer configured by a member for a spin orbit torque wiring on one main surface of the substrate; 
 processing the layer of the member for the spin orbit torque wiring to extend along the one direction while covering the plurality of recessed portions to form a spin orbit torque wiring; 
 forming a layer configured by a member for a first ferromagnetic layer on the spin orbit torque wiring; and 
 forming a first ferromagnetic layer by processing the layer of the member for the first ferromagnetic layer so that a portion overlapping the recessed portion is removed in plan view from the laminating direction. 
 
     
     
       10. The spin-current magnetization rotational element according to  claim 2 , further comprising:
 a via wiring extending in a direction intersecting the first direction from the second surface of the surface of the spin orbit torque wiring, 
 wherein the second region overlaps the via wiring in plan view from the second direction. 
 
     
     
       11. The spin-current magnetization rotational element according to  claim 2 ,
 wherein the depth of the recessed portion of the second region with respect to the first region is less than or equal to the thickness of the spin orbit torque wiring. 
 
     
     
       12. The spin-current magnetization rotational element according to  claim 3 ,
 wherein the depth of the recessed portion of the second region with respect to the first region is less than or equal to the thickness of the spin orbit torque wiring. 
 
     
     
       13. The spin-current magnetization rotational element according to  claim 2 ,
 wherein the recessed portion in the second region has an inclined surface inclined with respect to the first region on the first surface to be deeper the further away it is from the first region. 
 
     
     
       14. The spin-current magnetization rotational element according to  claim 3 ,
 wherein the recessed portion in the second region has an inclined surface inclined with respect to the first region on the first surface to be deeper the further away it is from the first region. 
 
     
     
       15. The spin-current magnetization rotational element according to  claim 4 ,
 wherein the recessed portion in the second region has an inclined surface inclined with respect to the first region on the first surface to be deeper the further away it is from the first region. 
 
     
     
       16. A spin orbit torque type magnetoresistance effect element, comprising:
 the spin-current magnetization rotational element according to  claim 2 ; 
 a non-magnetic layer disposed on a surface of the surface of the first ferromagnetic layer opposite to a surface positioned on the side of the spin orbit torque wiring; and 
 a second ferromagnetic layer sandwiching the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. 
 
     
     
       17. A spin orbit torque type magnetoresistance effect element, comprising:
 the spin-current magnetization rotational element according to  claim 3 ; 
 a non-magnetic layer disposed on a surface of the surface of the first ferromagnetic layer opposite to a surface positioned on the side of the spin orbit torque wiring; and 
 a second ferromagnetic layer sandwiching the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. 
 
     
     
       18. A spin orbit torque type magnetoresistance effect element, comprising:
 the spin-current magnetization rotational element according to  claim 4 ; 
 a non-magnetic layer disposed on a surface of the surface of the first ferromagnetic layer opposite to a surface positioned on the side of the spin orbit torque wiring; and 
 a second ferromagnetic layer sandwiching the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. 
 
     
     
       19. A spin orbit torque type magnetoresistance effect element, comprising:
 the spin-current magnetization rotational element according to  claim 5 ; 
 a non-magnetic layer disposed on a surface of the surface of the first ferromagnetic layer opposite to a surface positioned on the side of the spin orbit torque wiring; and 
 a second ferromagnetic layer sandwiching the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. 
 
     
     
       20. A spin orbit torque type magnetoresistance effect element, comprising:
 the spin-current magnetization rotational element according to  claim 6 ; 
 a non-magnetic layer disposed on a surface of the surface of the first ferromagnetic layer opposite to a surface positioned on the side of the spin orbit torque wiring; and 
 a second ferromagnetic layer sandwiching the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer.