Light emitting device having insulation layer of varying thickness and manufacturing method thereof

Abstract

A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.

What is claimed is: 
     
       1. A light emitting device comprising:
 a substrate; 
 a thin film transistor disposed on the substrate; 
 a first electrode connected to the thin film transistor; 
 a second electrode at least partially overlapping the first electrode; 
 a first partition wall disposed between the first electrode and the second electrode; and 
 an insulating layer disposed between the thin film transistor and the first electrode, 
 wherein, in a cross-sectional view, a thickest part of the insulating layer is entirely overlapped by the first partition wall in a vertical direction that is perpendicular to a horizontal plane of the substrate. 
 
     
     
       2. The light emitting device of  claim 1 , wherein the insulating layer includes a first part having a first thickness and a second part having a second thickness that is different from the first thickness, and the second part of the insulating layer at least partially overlaps the first partition wall in the vertical direction, in the cross-sectional view. 
     
     
       3. The light emitting device of  claim 2  wherein the second thickness is larger than the first thickness. 
     
     
       4. The light emitting device of  claim 2 , further comprising:
 an emission layer disposed between the first electrode and the second electrode, 
 wherein the emission layer is disposed between the first partition wall and a next partition wall, and the emission layer at least partially overlaps the first part of the insulating layer. 
 
     
     
       5. The light emitting device of  claim 2 , wherein the first electrode at least partially overlaps both of the first part and the second part of the insulating layer. 
     
     
       6. The light emitting device of  claim 2 , wherein the thickness of the first partition wall overlapping the second part of the insulating layer is within a range of 1.0 μm to 1.2 μm. 
     
     
       7. The light emitting device of  claim 2 , wherein the thickness of the first partition wall overlapping the first part of the insulating layer is within a range of 1.4 μm to 2.0 μm. 
     
     
       8. The light emitting device of  claim 2 , wherein the second part of the insulating layer is 20% to 40% thicker than the first part of the insulating layer. 
     
     
       9. The light emitting device of  claim 2 , wherein the first part of the insulating layer and the second part of the insulating layer are connected with an inclined surface, and an angle of the inclined surface is within a range of 15 degrees to 25 degrees with respect to the horizontal plane of the substrate. 
     
     
       10. The light emitting device of  claim 4 , wherein the first partition wall has an inclined surface at a part thereof that is in contact with the emission layer, and the angle of the inclined surface is 15 within a range of degrees to 25 degrees with respect to the horizontal plane of the substrate. 
     
     
       11. A light emitting device, comprising:
 a substrate; 
 an insulating layer disposed on the substrate; 
 a first electrode disposed on the insulating layer; 
 a partition wall disposed on the first electrode; 
 an emission layer disposed on the first electrode next to the partition wall; and 
 a second electrode disposed on the partition wall and the emission layer, 
 wherein, in a cross-sectional view, the first electrode terminates under the partition wall, with respect to a vertical direction that is perpendicular to a horizontal plane defined by the substrate, and 
 wherein, in the cross-sectional view, the partition wall is thinner in an area overlapping the terminating end of the first electrode than in an area that is not overlapped by the first electrode, with respect to the vertical direction.