Vapor deposition mask, vapor deposition mask production method, and organic semiconductor element production method

Abstract

A vapor deposition mask ( 100 ) includes a resin layer ( 10 ) including a plurality of openings ( 11 ); a magnetic metal layer ( 20 ) located so as to overlap the resin layer, the magnetic metal layer including a mask portion ( 20 a ) having such a shape as to expose the plurality of openings and a peripheral portion ( 20 b ) located so as to enclose the mask portion; and a frame ( 30 ) secured to the peripheral portion of the magnetic metal layer. The resin layer is not joined to the mask portion of the magnetic metal layer but is joined to at least a part of the peripheral portion of the magnetic metal layer.

The invention claimed is: 
     
       1. A vapor deposition mask, comprising:
 a resin layer including a plurality of openings; 
 a magnetic metal layer located so as to overlap the resin layer, the magnetic metal layer including a mask portion having such a shape as to expose the plurality of openings and a peripheral portion located so as to enclose the mask portion; 
 a metal film located between the peripheral portion of the magnetic metal layer and the resin layer and fixed to the resin layer; and 
 a frame secured to the peripheral portion of the magnetic metal layer; 
 wherein the resin layer is not joined to the mask portion of the magnetic metal layer but is joined to at least a part of the peripheral portion of the magnetic metal layer; 
 wherein the metal film is welded to the peripheral portion of the magnetic metal layer; and the resin layer is joined to the magnetic metal layer via the metal film; 
 the metal film has a first surface and a second surface opposite to the first surface; the first surface is in direct contact with the resin layer; and the second surface is in direct contact with the magnetic metal layer. 
 
     
     
       2. The vapor deposition mask of  claim 1 , wherein the magnetic metal layer is not receiving tension in any in-plane directions of the magnetic metal layer from the frame. 
     
     
       3. The vapor deposition mask of  claim 1 , wherein the resin layer is receiving tension in an in-plane direction of the resin layer from the frame and the magnetic metal layer. 
     
     
       4. The vapor deposition mask of  claim 3 , wherein the tension received by the resin layer is set such that an amount of elastic deformation of the resin layer caused by the tension is larger than, or equal to, an amount of thermal expansion of the resin layer caused when there is a temperature rise of 1° C. 
     
     
       5. The vapor deposition mask of  claim 3 , wherein the tension received by the resin layer is set such that an amount of elastic deformation of the resin layer caused by the tension is larger than, or equal to, an amount of thermal expansion of the resin layer caused when there is a temperature rise of 20° C. 
     
     
       6. The vapor deposition mask of  claim 1 , wherein where a material forming the magnetic metal layer has a linear thermal expansion coefficient of αM and a material forming the frame has a linear thermal expansion coefficient of αF, the relationship of 0.5 αM≤αF≤2.0 αM is satisfied. 
     
     
       7. The vapor deposition mask of  claim 1 , wherein the magnetic metal layer and the frame are formed of the same material as each other. 
     
     
       8. A method for producing an organic semiconductor device, comprising vapor-depositing an organic semiconductor material by utilizing the vapor deposition mask of  claim 1 .