Multimode multiband wireless device with broadband power amplifier

Abstract

A multimode multiband wireless device includes a broadband RF power amplifier that receives RF signals and produces amplified RF signals in a cellular band in a broadband, and a coexist filter coupled to the input of the broadband RF power amplifier. The coexist filter can reject RF noise in a predetermined frequency range in the broadband adjacent to the cellular band.

What is claimed is: 
     
       1. A radio frequency (RF) wireless module comprising:
 a semiconductor amplifier substrate having at least one RF power amplifier which is configured to operate in the range of 20 GigaHertz (GHz) to 300 GHz and which is coupled to an antenna substrate; 
 wherein the antenna substrate has a plurality of antenna elements arranged in at least one first row and configured to receive signals from the RF power amplifier; 
 a phase controller for controlling phase shifters for beam forming of a first electromagnetic wave beam emitting from the plurality of antenna elements; and 
 wherein the semiconductor amplifier substrate and the antenna substrate are arranged in a stack. 
 
     
     
       2. The module of  claim 1 , further comprising:
 a plurality of rows of a plurality antenna elements arranged in a two dimensional array. 
 
     
     
       3. The module of  claim 1 , further comprising:
 at least one gain controller on the semiconductor amplifier substrate coupled to the at least one RF power amplifier. 
 
     
     
       4. The module of  claim 1 , further comprising:
 at least one switch positioned on an output transmitter path side of the at least one RF power amplifier and connected to the plurality of antenna elements. 
 
     
     
       5. The module of  claim 1 , further comprising:
 at least one low noise amplifier (LNA) configured to receive and amplify RF signals from the plurality of antenna elements. 
 
     
     
       6. The module of  claim 1 , wherein the at least one RF amplifier may be from the group consisting of: Gallium Arsenide (GaAs) Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT), GaAs pseudomorphic high-electron mobile transistor (PHEMT), GaAs enhancement mode PHEMT (E-PHEMT), Gallium Nitride (GaN), Indium Phosphate (InP), Silicon Germanium (SiGe), complementary metal-oxide-semiconductor (CMOS), and Silicon on Insulator (SOI). 
     
     
       7. The module of  claim 1 , wherein the plurality of antenna elements further configured to send signals to a plurality of low noise amplifiers (LNA); and
 the phase controller further configured for receiving a second electromagnetic wave beam from the plurality of antenna elements. 
 
     
     
       8. A radio frequency (RF) wireless module comprising:
 a semiconductor amplifier substrate having a first set of RF power amplifiers operating at a first frequency and a second set of RF power amplifiers operating at a different second frequency and coupled to an antenna substrate; 
 wherein the antenna substrate has a plurality of first antenna elements arranged in a first array and coupled to the first set of RF power amplifiers and a plurality of second antenna elements arranged in a second array and coupled to the second set of RF power amplifiers, wherein the first antenna array is nested inside the second antenna array and the first antenna elements are configured to receive signals from the first set of RF power amplifiers and form a first electromagnetic wave beam and the second antenna elements are configured to receive signals from the second set of RF power amplifiers and form a second electromagnetic wave beam; 
 a phase controller for controlling phase shifters for beam forming of the first and second electromagnetic wave beams emitting from the first and second antenna arrays; and 
 wherein the semiconductor amplifier substrate and the antenna substrate are arranged in a stack. 
 
     
     
       9. The module of  claim 8 , wherein the first and second set of RF amplifiers operate in the range of 20 Gigahertz (GHz) to 300 GHz. 
     
     
       10. The module of  claim 8 , further comprising:
 at least one switch positioned on an output transmitter path side of the first and second set of RF power amplifiers and connected to the first and second plurality of antenna elements. 
 
     
     
       11. The module of  claim 8 , further comprising:
 a first and second set of low noise amplifiers (LNA) configured to receive and amplify RF signals from the first and second plurality of antenna elements. 
 
     
     
       12. The module of  claim 8 , wherein the semiconductor amplifier substrate is from the group consisting of: Gallium Arsenide (GaAs) Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT), GaAs pseudomorphic high-electron mobile transistor (PHEMT), GaAs enhancement mode PHEMT (E-PHEMT), Gallium Nitride (GaN), Indium Phosphate (InP), Silicon Germanium (SiGe), complementary metal-oxide-semiconductor (CMOS), and Silicon on Insulator (SOI). 
     
     
       13. The module of  claim 8 , wherein the semiconductor amplifier substrate has less area than the antenna substrate which allows the plurality of antennas elements to be exposed. 
     
     
       14. The module of  claim 8 , further comprising:
 first and second set of gain controllers on the semiconductor amplifier substrate coupled to the first and second set of RF power amplifiers. 
 
     
     
       15. The module of  claim 8 , further comprising:
 first and second set of gain controllers on the semiconductor amplifier substrate coupled to the first and second set of RF power amplifiers. 
 
     
     
       16. A radio frequency (RF) wireless module comprising:
 a semiconductor amplifier substrate having a first set of RF power amplifiers operating at a first frequency and a second set of RF power amplifiers operating at a different second frequency; 
 a plurality of switches positioned on an output transmitter path side of the first set of RF power amplifiers and the second set of RF power amplifiers; 
 wherein an antenna substrate has a plurality of antenna elements configured to receive signals from the plurality of switches; 
 first and second phase controllers for controlling phase shifters for beam forming of electromagnetic wave beams emitting from the plurality of antenna elements; and 
 wherein the semiconductor amplifier substrate and the antenna substrate are arranged in a stack. 
 
     
     
       17. The module of  claim 16 , wherein the plurality antenna elements arranged in a two dimensional array. 
     
     
       18. The module of  claim 16 , wherein the first and second set of RF amplifiers operate in the range of 20 Gigahertz (GHz) to 300 GHz. 
     
     
       19. The module of  claim 16 , further comprising:
 a first and second set of low noise amplifiers (LNA) configured to receive and amplify RF signals from the plurality of antenna elements. 
 
     
     
       20. The module of  claim 16 , wherein the semiconductor amplifier substrate has less area than the antenna substrate which allows the plurality of antennas elements to be exposed.