Wiring base plate, electronic device package, and electronic device

Abstract

Provided are a wiring base plate and the like including an insulating substrate including a first surface portion including an aluminum oxide-based sintered body and a mullite-based sintered body; and a metallization layer including a second surface portion, the second surface portion containing at least one of a manganese compound and a molybdenum compound and being in contact with the first surface portion of the insulating substrate; wherein the second surface portion of the metallization layer and the first surface portion of the insulating substrate contain at least one of a manganese silicate phase and a magnesium silicate phase.

The invention claimed is: 
     
       1. A wiring base plate comprising:
 an insulating substrate including a first surface portion containing an aluminum oxide-based sintered body and a mullite-based sintered body; and 
 a metallization layer including a second surface portion, the second surface portion containing at least one of a manganese compound and a molybdenum compound and being in contact with the first surface portion of the insulating substrate; 
 wherein the second surface portion of the metallization layer and the first surface portion of the insulating substrate contain at least one of a manganese silicate phase and a magnesium silicate phase. 
 
     
     
       2. The wiring base plate according to  claim 1 , wherein
 the insulating substrate and the metallization layer contain an additive including at least one of a manganese compound and a molybdenum compound, and including silica; and 
 content of the additive in the insulating substrate and the metallization layer is greater in the first surface portion than that in other portions of the insulating substrate, and is greater in the second surface portion than that in other portions of the metallization layer. 
 
     
     
       3. The wiring base plate according to  claim 2 , wherein the molybdenum compound is molybdenum oxide. 
     
     
       4. The wiring base plate according to  claim 1 , wherein the insulating substrate further contains at least one of a manganese aluminate phase and a magnesium aluminate phase. 
     
     
       5. The wiring base plate according to  claim 1 , wherein a lower surface and a side surface of the insulating substrate include the first surface portion, and the metallization layer is located on the lower surface and the side surface of the insulating substrate. 
     
     
       6. An electronic device package comprising:
 the wiring base plate according to  claim 5 ; and 
 a metal housing including a recessed portion; 
 wherein the insulating substrate is bonded to an inner surface of a recessed portion of the metal housing via the metallization layer. 
 
     
     
       7. The electronic device package according to  claim 6 , wherein a lower surface and a side surface of the insulating substrate are bonded to a bottom surface and an inner side surface of a recessed portion of the metal housing via the metallization layer. 
     
     
       8. An electronic device comprising the electronic device package according to  claim 6  and an electronic component housed within a recessed portion of the metal housing. 
     
     
       9. An electronic device package comprising:
 the wiring base plate according to  claim 1 ; and 
 a metal housing including a recessed portion; 
 wherein the insulating substrate is bonded to an inner surface of a recessed portion of the metal housing via the metallization layer. 
 
     
     
       10. An electronic device comprising:
 the electronic device package according to  claim 9 , and 
 an electronic component housed within a recessed portion of the metal housing. 
 
     
     
       11. The wiring base plate according to  claim 1 , wherein
 the insulating substrate contains an additive including at least one of a manganese compound and a molybdenum compound, and including silica; and 
 a content of the additive in the insulating substrate is greater in the first surface portion than that in other portions of the insulating substrate. 
 
     
     
       12. The wiring base plate according to  claim 1 , wherein
 the metallization layer contains an additive including at least one of a manganese compound and a molybdenum compound, and including silica; and 
 content of the additive in the metallization layer is greater in the second surface portion than that in other portions of the metallization layer. 
 
     
     
       13. The wiring base plate according to  claim 1 , wherein
 the insulating substrate comprises a lower surface including the first surface portion; and 
 the metallization layer is located on the lower surface of the insulating substrate. 
 
     
     
       14. The wiring base plate according to  claim 1 , wherein the at least one of a manganese silicate phase and a magnesium silicate phase comprises a particle having a surface with complex irregular curves.