US11007751B2ActiveUtilityPatentIndex 60

Impact resistant structure and electronic device

Assignee: IND TECH RES INSTPriority: Aug 14, 2017Filed: Dec 30, 2019Granted: May 18, 2021

Est. expiryAug 14, 2037(~11.1 yrs left)· nominal 20-yr term from priority

Inventors:CHUANG JUI-CHANG TSAI CHEN-CHU CHANG KAI-MING CHANG CHIH-CHIA CHENG TING-HSUN

H10W 42/121B32B 7/12G02B 1/14B32B 2457/00B32B 2307/558B32B 2307/584H01L 23/562

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Claims

Abstract

An impact resistant structure for an electronic component. The impact resistant structure includes a resistance stack layer and a damping laminate. The resistance stack layer is disposed on a first surface of the electronic component, a thickness of the resistance stack layer is less than 10 μm, and a Young's modulus of the resistance stack layer is between 40 GPa and 150 GPa. The damping laminate is disposed on a second surface of the electronic component. The second surface of the electronic component is opposite to the first surface. The damping laminate includes a soft film and a support film, where the support film is disposed between the soft film and the electronic component.

Claims

exact text as granted — not AI-modified

What is claimed is: 
     
       1. An impact resistant structure for an electronic component, comprising:
 a resistance stack layer, disposed on a first surface of the electronic component, wherein a thickness of the resistance stack layer is less than 10 μm, and a Young&#39;s modulus of the resistance stack layer is between 40 GPa and 150 GPa; and 
 a damping laminate, disposed on a second surface of the electronic component, wherein the second surface of the electronic component is opposite to the first surface, and the damping laminate comprises: 
 a relative soft film; and 
 a support film, disposed between the relative soft film and the electronic component, wherein a Young&#39;s modulus of the relative soft film is smaller than a Young&#39;s modulus of the support film. 
 
     
     
       2. The impact resistant structure as claimed in  claim 1 , wherein a thickness of the resistance stack layer is between 0.1 μm and 10 μm. 
     
     
       3. The impact resistant structure as claimed in  claim 1 , wherein a Young&#39;s modulus of the electronic component is between 30 GPa and 70 GPa. 
     
     
       4. The impact resistant structure as claimed in  claim 1 , wherein a thickness of the electronic component is between 0.5 μm and 30 μm. 
     
     
       5. The impact resistant structure as claimed in  claim 1 , wherein a Young&#39;s modulus of the support film is between 2 GPa and 150 GPa. 
     
     
       6. The impact resistant structure as claimed in  claim 1 , wherein a thickness of the support film is between 30 μm and 500 μm. 
     
     
       7. The impact resistant structure as claimed in  claim 1 , wherein a Young&#39;s modulus of the relative soft film is between 0.001 GPa and 3 GPa. 
     
     
       8. The impact resistant structure as claimed in  claim 1 , wherein a thickness of the relative soft film is between 30 μm and 1000 μm. 
     
     
       9. The impact resistant structure as claimed in  claim 1 , wherein a material of the support film comprises poly (methyl methacrylate) (PMMA), polycarbonate (PC), polyethersulfone (PES), polyamide (PA), poly (ethylene terephthalate) (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN), polyethylenimine (PEI), polyurethane (PU), polydimethylsiloxane (PDMS), acrylic, ether series of polymers, polyolefin, metal, glass, fiber composition, or a combination thereof. 
     
     
       10. The impact resistant structure as claimed in  claim 1 , wherein a material of the relative soft film comprises silicone, rubber, acrylonitrile butadiene styrene resin, polyethylenimine (PEI), polyurethane (PU), an adhesive, a filler, thermoplastic urethane (TPU) or a combination thereof. 
     
     
       11. The impact resistant structure as claimed in  claim 1 , wherein a material of the resistance stack layer comprises polyimide (PI), poly (methyl methacrylate) (PMMA), polycarbonate (PC), polyethersulfone (PES), polyamide (PA), poly (ethylene terephthalate) (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN), polyethylenimine (PEI), polyurethane (PU), polydimethylsiloxane (PDMS), acrylic, ether series of polymers, polyolefin, amorphous carbon material, diamond-like carbon (DLC), or a combination thereof. 
     
     
       12. An impact resistant structure for an electronic component, comprising:
 a resistance stack layer, disposed on a first surface of the electronic component, wherein a thickness ratio of the resistance stack layer to the electronic component is between 0.02 and 6, and a Young&#39;s modulus ratio of the resistance stack layer to the electronic component is between 0.57 and 5; and 
 a damping laminate, disposed on a second surface of the electronic component, wherein the second surface of the electronic component is opposite to the first surface, and the damping laminate comprises: 
 a relative soft film; and 
 a support film, disposed between the relative soft film and the electronic component, wherein a Young&#39;s modulus of the relative soft film is smaller than a Young&#39;s modulus of the support film. 
 
     
     
       13. The impact resistant structure as claimed in  claim 12 , wherein a Young&#39;s modulus ratio of the relative soft film to the support film is larger than 6.6×10 −7 . 
     
     
       14. The impact resistant structure as claimed in  claim 12 , wherein a thickness ratio of the relative soft film to the support film is between 1 and 33.33. 
     
     
       15. The impact resistant structure as claimed in  claim 12 , wherein a Young&#39;s modulus ratio of the electronic component to the damping laminate is between 0.2 and 3.5. 
     
     
       16. The impact resistant structure as claimed in  claim 12 , wherein a thickness ratio of the electronic component to the damping laminate is between 0.001 and 0.96. 
     
     
       17. The impact resistant structure as claimed in  claim 12 , wherein a material of the support film comprises poly (methyl methacrylate) (PMMA), polycarbonate (PC), polyethersulfone (PES), polyamide (PA), poly (ethylene terephthalate) (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN), polyethylenimine (PEI), polyurethane (PU), polydimethylsiloxane (PDMS), acrylic, ether series of polymers, polyolefin, metal, glass, fiber composition, or a combination thereof. 
     
     
       18. The impact resistant structure as claimed in  claim 12 , wherein a material of the relative soft film comprises silicone, rubber, acrylonitrile butadiene styrene resin, polyethylenimine (PEI), polyurethane (PU), an adhesive, a filler, thermoplastic urethane (TPU) or a combination thereof. 
     
     
       19. The impact resistant structure as claimed in  claim 12 , wherein a material of the resistance stack layer comprises polyimide (PI), poly (methyl methacrylate) (PMMA), polycarbonate (PC), polyethersulfone (PES), polyamide (PA), poly (ethylene terephthalate) (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN), polyethylenimine (PEI), polyurethane (PU), polydimethylsiloxane (PDMS), acrylic, ether series of polymers, polyolefin, amorphous carbon material, diamond-like carbon (DLC), or a combination thereof. 
     
     
       20. An electronic device, comprising:
 an electronic component; and 
 the impact resistant structure, the resistance stack layer or the damping laminate as claimed in  claim 1 , disposed on the electronic component.

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