Multilayer carbon nanotube film-containing devices

Abstract

The present disclosure relates to a device that includes an active layer and a first charge transport layer, where the first charge transport layer includes a first layer and a second layer, the first layer is in contact with the second layer, the second layer is positioned between the first layer and the active layer, the first layer comprises a first carbon nanostructure, and the second layer includes a second carbon nanostructure.

What is claimed is: 
     
       1. A device comprising:
 a perovskite layer; 
 a charge transport layer (CTL) comprising a first layer and a second layer; 
 a metallic layer; 
 a reservoir, and 
 an intercalating molecule consisting of CH 3 NH 2 , wherein: 
 the first layer comprises a first carbon nanostructure and a dopant, 
 the second layer comprises a second carbon nanostructure, 
 the first layer is positioned between the metallic layer and the second layer, 
 the second layer is positioned between the first layer and the perovskite layer, 
 the reservoir is positioned adjacent to the metallic layer, 
 the reservoir is configured such that the intercalating molecule is capable of diffusing reversibly between the reservoir and the perovskite layer, and 
 the CTL and the metallic layer are both configured to be permeable to the intercalating molecule. 
 
     
     
       2. The device of  claim 1 , wherein the first carbon nanostructure comprises a single-walled carbon nanotube (SWCNT). 
     
     
       3. The device of  claim 2 , wherein the SWCNT is at least partially semiconductive. 
     
     
       4. The device of  claim 1 , wherein the dopant is present at an atomic concentration between greater than 0% and 30%. 
     
     
       5. The device of  claim 1 , wherein the first layer has a thickness between one nanometer and 200 nm, inclusively. 
     
     
       6. The device of  claim 1 , wherein the second layer has a thickness between greater than one nanometer and 200 nm, inclusively. 
     
     
       7. The device of  claim 1 , wherein the metallic layer is a grid. 
     
     
       8. The device of  claim 7 , wherein the grid comprises a square network of bars having holes between the bars. 
     
     
       9. The device of  claim 8 , wherein the bars comprise nickel. 
     
     
       10. The device of  claim 1 , further comprising an electrically conductive polymer layer, wherein the electrically conductive polymer layer is positioned between the CTL and the metallic layer. 
     
     
       11. The device of  claim 10 , wherein the electrically conductive polymer layer comprises poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT). 
     
     
       12. The device of  claim 1 , wherein the dopant comprises 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane. 
     
     
       13. The device of  claim 1 , wherein the second layer further comprises a polymer comprising poly[(9,9-di-n-dodecyl-2,7-fluorendiyl-dimethine)-(1,4-phenylene-dinitrilomethine)]. 
     
     
       14. The device of  claim 13 , wherein the second carbon nanostructure is at least partially coated by the polymer. 
     
     
       15. The device of  claim 13 , wherein the polymer further comprises at least one of poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6′-{2,2′-bipyridine})], poly[(9,9-dihexylfluorenyl-2,7-diyl)-co-(9,10-anthracene)], poly(9,9-dioctylfluorenyl-2,7-diyl), poly[2-ureido-6[1H]-pyrimidinone], or poly(3-hexylthiophene-2,5-diyl). 
     
     
       16. The device of  claim 13 , wherein the polymer is present at a mass ratio of the polymer to the second carbon nanostructure between 0.1:1 and 1:1, inclusively. 
     
     
       17. The device of  claim 1 , wherein:
 the perovskite is reversibly switchable between a transparent state and a tinted state, 
 while in the transparent state, at least a portion of the intercalating molecule is positioned within the perovskite layer, and 
 while in the tinted state, the perovskite layer is substantially free of the intercalating molecule. 
 
     
     
       18. The device of  claim 17 , wherein the perovskite is reversibly switchable in response to a change in at least one of a pressure change or an energy input. 
     
     
       19. The device of  claim 18 , wherein the energy input comprises at least one of a heat source, a radiation source, or an electrical bias. 
     
     
       20. The device of  claim 18 , wherein the energy input comprises a heat source configured to reversibly change the temperature of the perovskite layer between 25° C. temperature and about 60° C., corresponding to the transparent state and the tinted state, respectively. 
     
     
       21. The device of  claim 18 ,
 wherein 
 when in the tinted state, a substantial portion of the intercalating molecule is positioned within the reservoir. 
 
     
     
       22. The device of  claim 21 , wherein the reservoir comprises a space positioned adjacent to the metallic layer. 
     
     
       23. The device of  claim 22 , wherein the reservoir comprises a transparent chamber. 
     
     
       24. The device of  claim 23 , wherein the transparent chamber contains a gas comprising at least one of the intercalating molecule or an inert gas. 
     
     
       25. The device of  claim 24 , wherein the pressure change corresponds to reversibly switching the pressure in the reservoir between a minimum pressure less and a maximum pressure, corresponding to a tinted state and transparent state, respectively. 
     
     
       26. The device of  claim 25 , wherein the maximum pressure is between about 620 Torr and 1550 Torr. 
     
     
       27. The device of  claim 25 , wherein the minimum pressure is between 10 −11  Torr and less than the maximum pressure.