Light-emitting device having gap portion between portion of insulating film and side surface of light-emitting layer

Abstract

A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having an n-side contact surface, a light-emitting layer located on a region of the n-type semiconductor layer surrounding the n-side contact surface in a top-view, and a p-type semiconductor layer provided on the light-emitting layer; an n-side electrode contacting the n-side contact surface; a p-side electrode located on and contacting the p-type semiconductor layer; and an insulating film opposing a side surface of the light-emitting layer; wherein a first gap portion is located between the insulating film and the side surface of the light-emitting layer such that the side surface of the light-emitting layer is exposed at the first gap portion.

What is claimed is: 
     
       1. A light-emitting device comprising:
 a semiconductor stacked body comprising:
 an n-type semiconductor layer having an n-side contact surface and an upper surface, 
 a light-emitting layer located on the upper surface of the n-type semiconductor layer, the light-emitting layer having an upper surface, a lower surface, and a side surface extending from the upper surface to the lower surface, and 
 a p-type semiconductor layer provided on the upper surface of the light-emitting layer, 
 wherein the side surface of the light-emitting layer is exposed from the n-type semiconductor layer and the p-type semiconductor layer; 
 
 a p-side electrode located on and contacting the p-type semiconductor layer; and 
 an insulating film partially covering the p-type semiconductor layer and the light-emitting layer, wherein a first portion of the insulating film opposes the side surface of the light-emitting layer; and 
 an n-side electrode contacting the n-side contact surface and partially covering the insulating film, such that a second portion of the insulating film is located between the n-side electrode and the p-side electrode in a direction perpendicular to the upper surface of the n-type semiconductor layer; 
 wherein a first gap portion is located between the first portion of the insulating film and the side surface of the light-emitting layer such that the side surface of the light-emitting layer is exposed at the first gap portion. 
 
     
     
       2. The device according to  claim 1 , wherein a second gap portion is located at a portion of the n-side contact surface such that the portion of the n-side contact surface is exposed at the second gap portion. 
     
     
       3. The device according to  claim 2 , wherein the second gap portion communicates with the first gap portion. 
     
     
       4. The device according to  claim 1 , wherein:
 the n-type semiconductor layer has a side surface where the light-emitting layer and the p-type semiconductor layer are not stacked; and 
 a third gap portion is located at the side surface of the n-type semiconductor layer such that the side surface of the n-type semiconductor layer is exposed at the third gap portion. 
 
     
     
       5. The device according to  claim 2 , wherein:
 the n-type semiconductor layer has a side surface where the light-emitting layer and the p-type semiconductor layer are not stacked; and 
 a third gap portion is located at the side surface of the n-type semiconductor layer such that the side surface of the n-type semiconductor layer is exposed at the third gap portion. 
 
     
     
       6. The device according to  claim 3 , wherein:
 the n-type semiconductor layer has a side surface where the light-emitting layer and the p-type semiconductor layer are not stacked; and 
 a third gap portion is located at the side surface of the n-type semiconductor layer such that the side surface of the n-type semiconductor layer is exposed at the third gap portion. 
 
     
     
       7. The device according to  claim 4 , wherein the third gap portion communicates with the first gap portion. 
     
     
       8. The device according to  claim 5 , wherein the third gap portion communicates with the first gap portion. 
     
     
       9. The device according to  claim 6 , wherein the third gap portion communicates with the first gap portion. 
     
     
       10. The device according to  claim 1 , wherein:
 the n-side electrode covers the first portion of the insulating film.