Gas cluster ion beam apparatus and analyzing apparatus

Abstract

An analyzing apparatus includes a sample chamber, a measurement apparatus, and a gas cluster ion beam apparatus. A cooling body separates an ionization chamber of the gas cluster ion beam apparatus from a nozzle support to prevent heat emitted by an ionization filament from being transmitted to the nozzle support, and a temperature of a source gas emitted from a nozzle is kept at a constant temperature by a gas heating device while a sputtering rate is kept constant. A pressure of the source gas supplied to the nozzle is kept at constant pressure by a pressure controller, and a size of gas cluster ions is kept at a constant value. Because the sputtering rate is a constant value, highly accurate depth surface profiling can be performed.

What is claimed is: 
     
       1. An analyzing apparatus comprising:
 a sample chamber configured to receive a sample; 
 a measurement apparatus configured to measure a physical quantity of a surface of the sample; 
 a gas cluster ion beam apparatus configured to emit a gas cluster ion beam on the sample, the gas cluster ion beam apparatus including:
 an ionization chamber configured so that a gas cluster formed by ejecting source gas from an ejection hole of a nozzle supported by a nozzle support travels; 
 an ionization filament configured to emit thermoelectrons when heated and to irradiate the gas cluster travelling in the ionization chamber with the thermoelectrons so as to generate gas cluster ions; 
 a cooling body; the nozzle support and the ionization chamber being in contact with the cooling body, and separated from each other; 
 a cooling device configured to cool the cooling body to a predetermined temperature; 
 a gas pipe configured to supply the source gas to the nozzle; 
 a gas heating device configured to heat the source gas; and 
 a main controller configured to control the heat generation of the gas heating device, 
 
 wherein, while a temperature of the source gas ejected from the nozzle is controlled by the main controller, the gas cluster ion beam containing the generated gas cluster ions is ejected outside the ionization chamber and is irradiated on the sample arranged in the sample chamber. 
 
     
     
       2. The analyzing apparatus according to  claim 1 , wherein a temperature of the cooling body is controlled by the main controller. 
     
     
       3. The analyzing apparatus according to  claim 1 , further comprising a pressure controller configured to control a pressure of the source gas supplied to the nozzle. 
     
     
       4. The analyzing apparatus according to  claim 1 , further comprising:
 a vacuum-exhausted ejection tank having the nozzle support; and 
 a vacuum-exhausted ionization tank having the ionization chamber, the ejection tank and the ionization tank not being in contact with each other, and each of the ejection tank and the ionization tank is in contact with the cooling body. 
 
     
     
       5. The analyzing apparatus according to  claim 1 , wherein a cooling medium cooled by the cooling device is circulated through the cooling body to cool the cooling body. 
     
     
       6. A gas cluster ion beam apparatus comprising:
 an ionization chamber configured so that a gas cluster formed by ejecting source gas from an ejection hole of a nozzle supported by a nozzle support travels; 
 an ionization filament configured to emit thermoelectrons when heated and to irradiate the gas cluster travelling in the ionization chamber with the thermoelectrons so as to generate gas cluster ions; 
 a cooling body; the nozzle support and the ionization chamber being in contact with the cooling body, and separated from each other; 
 a cooling device configured to cool the cooling body to a predetermined temperature; 
 a gas pipe configured to supply the source gas to the nozzle; 
 a gas heating device configured to heat the source gas; and 
 a main controller configured to control the heat generation of the gas heating device, 
 wherein, while a temperature of the source gas ejected from the nozzle is controlled by the main controller, the gas cluster ion beam containing the generated gas cluster ions is ejected outside the ionization chamber and is irradiated on the sample arranged in the sample chamber. 
 
     
     
       7. The gas cluster ion beam apparatus according to  claim 6 , wherein a temperature of the cooling body is controlled by the main controller. 
     
     
       8. The gas cluster ion beam apparatus according to  claim 6 , further comprising a pressure controller configured to control a pressure of the source gas supplied to the nozzle. 
     
     
       9. The gas cluster ion beam apparatus according to  claim 6 , further comprising:
 a vacuum-exhausted ejection tank having the nozzle support; and 
 a vacuum-exhausted ionization tank having the ionization chamber, the ejection tank and the ionization tank not being in contact with each other, and each of the ejection tank and the ionization tank is in contact with the cooling body. 
 
     
     
       10. The gas cluster ion beam apparatus according to  claim 6 , wherein a cooling medium cooled by the cooling device is circulated through the cooling body to cool the cooling body.