Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

Abstract

An optoelectronic semiconductor component is specified which comprises a semiconductor layer sequence having a first and a second semiconductor layer of a first conductivity type, an active layer designed for generating electromagnetic radiation, a first electrical terminal layer and a second electrical terminal layer laterally spaced therefrom which electrically contacts the second semiconductor layer, and a first contact zone of a second conductivity type which adjoins the first electrical terminal layer and is electrically conductively connected to the first electrical terminal layer. And at least one functional region formed between the first and second terminal layers, in which a second contact zone of a second conductivity type and at least one shielding zone of a second conductivity type is formed.Furthermore, a method for producing the optoelectronic semiconductor component is specified.

The invention claimed is: 
     
       1. An optoelectronic semiconductor component having
 a semiconductor layer sequence comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and an active layer designed for generating electromagnetic radiation, wherein the active layer is disposed between the first semiconductor layer and the second semiconductor layer, 
 a first electrical terminal layer and a second electrical terminal layer laterally spaced from the first electrical terminal layer and electrically contacting the active layer, 
 a first contact zone of a second conductivity type adjacent to the first electrical terminal layer and electrically conductively connected to the first electrical terminal layer, 
 at least one functional region formed between the first electrical terminal layer and the second electrical terminal layer, in which a second contact zone of a second conductivity type and at least one shielding zone of a second conductivity type are formed, wherein
 the second contact zone adjoins an electrical connection layer and is electrically conductively connected to the electrical connection layer, 
 the electrical connection layer extends outside the semiconductor layer sequence and contacts the second semiconductor layer ( 102 ) in an electrical connection region, and 
 the shielding zone is disposed between the second contact zone and the electrical connection region and is electrically insulated from the electrical connection layer, and 
 
 the first contact zone, the second contact zone and the shielding zone extend from the second semiconductor layer to the first semiconductor layer and penetrate completely through the active layer. 
 
     
     
       2. The optoelectronic semiconductor component according to  claim 1 , in which the shielding zone reduces a flow of charge carriers within the semiconductor layer sequence in the lateral direction. 
     
     
       3. The optoelectronic semiconductor component according to  claim 1 , in which a lightly doped second contact layer of the first conductivity type is arranged between the second semiconductor layer and the first electrical terminal layer and/or between the second semiconductor layer and the electrical connection layer. 
     
     
       4. The optoelectronic semiconductor component according to  claim 1 , in which at least one semiconductor layer of the semiconductor layer sequence is based on a phosphide compound semiconductor material. 
     
     
       5. The optoelectronic semiconductor component according to  claim 1 , in which at least one semiconductor layer of the semiconductor layer sequence is based on an arsenide compound semiconductor material. 
     
     
       6. The optoelectronic semiconductor component according to  claim 1 , in which the first conductivity type is produced by n-doping with silicon, tellurium and/or tin. 
     
     
       7. The optoelectronic semiconductor component according to  claim 1 , in which the second conductivity type is produced by p-doping with magnesium and/or zinc. 
     
     
       8. The optoelectronic semiconductor component according to  claim 1 , in which the side of the first semiconductor layer remote from the active layer has a roughened or structured surface. 
     
     
       9. The optoelectronic semiconductor component according to  claim 1 , in which the side of the first semiconductor layer remote from the active layer is free from electrical terminal layers. 
     
     
       10. The optoelectronic semiconductor component according to  claim 1 , in which a recess extends from the second semiconductor layer in the direction of the first semiconductor layer,
 which completely penetrates the active layer, 
 which is arranged between the second contact zone and the electrical connection region, and 
 which is filled with a dielectric. 
 
     
     
       11. The optoelectronic semiconductor component according to  claim 10 , in which the recess is arranged completely within a shielding zone. 
     
     
       12. The optoelectronic semiconductor component according to  claim 10 , in which a plurality of recesses are arranged in the lateral direction between the second contact zone and the electrical connection region. 
     
     
       13. The optoelectronic semiconductor component according to  claim 12 , in which a plurality of shielding zones are formed within a functional region. 
     
     
       14. The optoelectronic semiconductor component according to  claim 1 , in which a plurality of functional regions according to one of the preceding claims are formed in lateral sequence between the first electrical terminal layer and the second electrical terminal layer. 
     
     
       15. A method for producing an optoelectronic semiconductor component comprising the following steps:
 A) providing a growth substrate, 
 B) growing a semiconductor layer sequence comprising a first semiconductor layer, a second semiconductor layer and an active layer designed for generating electromagnetic radiation, 
 C) introducing a first contact zone, a second contact zone and at least one shielding zone into the semiconductor layer sequence, 
 D) arranging an electrically insulating layer on the side of the second semiconductor layer remote from the active layer, 
 E) arranging a first electrical terminal layer, a second electrical terminal layer and an electrical connection layer on the side of the electrically insulating layer remote from the active layer, 
 F) roughening the side of the first semiconductor layer remote from the active layer. 
 
     
     
       16. The method for producing an optoelectronic semiconductor component according to  claim 15 , wherein step C) is carried out only after step B). 
     
     
       17. The method for producing an optoelectronic semiconductor component according to  claim 15 , in which the semiconductor layer sequence is applied to a carrier on a side remote from the growth substrate and the growth substrate is detached.