US11150553B2ActiveUtilityA1

Methods of forming imprinted patterns

51
Assignee: SK HYNIX INCPriority: Feb 23, 2018Filed: Oct 24, 2018Granted: Oct 19, 2021
Est. expiryFeb 23, 2038(~11.6 yrs left)· nominal 20-yr term from priority
Inventors:Wooyung Jung
G03F 7/70483G03F 7/168G03F 7/0002B29C 35/0888G03F 7/0017H10P 76/2041
51
PatentIndex Score
0
Cited by
13
References
7
Claims

Abstract

A method of forming imprinted patterns is provided. The method may include detecting a particle located on a wafer. The method may include distributing an imprint medium material on a surface of the wafer. The method may include forming an imprint medium layer on a surface of the wafer with a template and the imprint medium material.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method of forming imprinted patterns, the method comprising:
 detecting a particle located on a wafer; 
 distributing an imprint medium material on a surface of the wafer, wherein distributing the imprint medium material on the surface of the wafer comprises: 
 forming first droplets of the imprint medium material on the surface of the wafer; 
 and forming second droplets of the imprint medium material at positions adjacent to the particle on the surface of the wafer; and 
 forming an imprint medium layer on the surface of the wafer with a template and the imprint medium material, 
 wherein the imprint medium layer has a first thickness and a second thickness greater than the first thickness, and the second thickness is closer in proximity to the particle than the first thickness, and 
 wherein the first thickness is less than a height of the particle. 
 
     
     
       2. The method of  claim 1 , wherein distances between the second droplets of the imprint medium material are less than a distance between the first droplets of the imprint medium material. 
     
     
       3. The method of  claim 1 , wherein each of the second droplets of the imprint medium material is formed to have a volume size which is greater than a volume size of each of the first droplets of the imprint medium material. 
     
     
       4. The method of  claim 1 , wherein the second droplets of the imprint medium material are formed such that an integration density of the second droplets is greater than an integration density of the first droplets. 
     
     
       5. The method of  claim 1 , wherein forming the imprint medium layer on the surface of the wafer includes spreading the first and second droplets by pressing down the template toward the wafer. 
     
     
       6. The method of  claim 1 , wherein the imprint medium layer is formed such that a portion of the imprint medium layer adjacent to the particle is thicker than the other portion of the imprint medium layer farther from the particle than the imprint medium layer adjacent to the particle due to the second droplets of the imprint medium material. 
     
     
       7. The method of  claim 1 , wherein the imprint medium layer is formed such that a local portion of the imprint medium layer adjacent to the particle fully embeds an entire portion of the particle due to the second droplets of the imprint medium material.

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