Semiconductor device having rare earth oxide layer and method of manufacturing the same

Abstract

A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a first rare earth oxide layer; 
 a first magnetic layer adjacent to the first rare earth oxide layer; 
 a second rare earth oxide layer; 
 a second magnetic layer adjacent to the second rare earth oxide layer; and 
 a nonmagnetic layer, 
 wherein: 
 the first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer, 
 the second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer, 
 the nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer, 
 the first magnetic layer and the first rare earth oxide layer contain a same element, and 
 the same element is at least one of B, P, C, Ta, W, Cr, Hf and Ti. 
 
     
     
       2. The device of  claim 1 , wherein:
 the second magnetic layer and the second rare earth oxide layer contain a same element, and 
 the same element is at least one of B, P, C, Mn, Ta, W, Cr, Hf and Ti. 
 
     
     
       3. The device of  claim 1 , wherein:
 the first magnetic layer contacts the first rare earth oxide layer, and 
 the second magnetic layer contacts the second rare earth oxide layer. 
 
     
     
       4. The device of  claim 1 , wherein a material included in the nonmagnetic layer is different from a material included in the first rare earth oxide layer and a material included in the second rare earth oxide layer. 
     
     
       5. The device of  claim 4 , wherein the nonmagnetic layer includes at least one of magnesium oxide, aluminum oxide, zinc oxide, titanium oxide, aluminum nitride, boron nitride and lanthanum-strontium-manganese oxide (LSMO). 
     
     
       6. The device of  claim 1 , further comprising:
 a transistor; and 
 a plug, 
 wherein: 
 the first rare earth oxide layer, the first magnetic layer, the second rare earth oxide layer, the second magnetic layer and the nonmagnetic layer are included in a magnetoresistive element, and 
 the magnetoresistive element is connected to the transistor via the plug. 
 
     
     
       7. The device of  claim 1 , wherein the first rare earth oxide layer, the first magnetic layer, the second rare earth oxide layer, the second magnetic layer and the nonmagnetic layer form a magnetoresistive element to which data can be written. 
     
     
       8. The device of  claim 1 , wherein the first rare earth oxide layer includes at least one of Tb, Gd, Nd, Sm, Pm, Tm, Ce, Eu, Er, Ho, Yb, Lu, and Dy. 
     
     
       9. The device of  claim 1 , wherein the second rare earth oxide layer includes at least one of Tb, Gd, Nd, Sm, Pm, Tm, Ce, Eu, Er, Ho, Yb, Lu and Dy.