P
US11226422B2ActiveUtilityPatentIndex 61

X-ray detector and x-ray device with x-ray detector

Assignee: SIEMENS HEALTHCARE GMBHPriority: Jul 8, 2019Filed: Jun 30, 2020Granted: Jan 18, 2022
Est. expiryJul 8, 2039(~13 yrs left)· nominal 20-yr term from priority
Inventors:HOSEMANN MICHAELERGLER THORSTENWREGE JAN
H04N 23/30H10F 30/29G01T 1/17G01T 1/246G01T 1/247A61B 6/4241G01T 1/24H04N 5/32
61
PatentIndex Score
0
Cited by
16
References
19
Claims

Abstract

An x-ray detector includes a sensor slice for directly converting x-ray radiation and a downstream read-out chip. Further, in at least one embodiment, a first amplifier stage is interconnected between the sensor slice and read-out chip.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An x-ray detector, comprising:
 a sensor slice to directly convert x-ray radiation; and 
 a downstream read-out chip; 
 a first amplifier stage, connected between the sensor slice and the downstream read-out chip; and 
 an interposer, connected between the sensor slice and downstream read-out chip, the interposer including a number of layers and the first amplifier stage being embodied by at least one layer of the number of layers. 
 
     
     
       2. The x-ray detector of  claim 1 , wherein the downstream read-out chip includes a second amplifier stage. 
     
     
       3. The x-ray detector of  claim 1 , wherein the first amplifier stage is connected between the sensor slice and the interposer. 
     
     
       4. The x-ray detector of  claim 3 , wherein a glass interposer is connected as the interposer between the sensor slice and downstream read-out chip and wherein the first amplifier stage is manufactured on the glass interposer via a thin film technology (TFT) methodology. 
     
     
       5. The x-ray detector of  claim 1 , wherein the first amplifier stage is a thin film transistor (TFT). 
     
     
       6. The x-ray detector of  claim 1 , wherein the interposer is a glass interposer, connected between the sensor slice and downstream read-out chip and wherein the first amplifier stage is manufactured on the glass interposer via thin film transistor (TFT) technology methodology. 
     
     
       7. The x-ray detector of  claim 1 , wherein the at least one layer embodying the first amplifier stage is arranged upstream of a redistribution layer. 
     
     
       8. The x-ray detector of  claim 1 , wherein the first amplifier stage is realized on a film. 
     
     
       9. The x-ray detector of  claim 8 , wherein the first amplifier stage is printed on the film. 
     
     
       10. The x-ray detector of  claim 8 , wherein the film is laminated onto the sensor slice or the interposer. 
     
     
       11. The x-ray detector of  claim 1 , wherein the first amplifier stage is attached to the sensor slice. 
     
     
       12. The x-ray detector of  claim 11 , wherein a conductor board is connected between the first amplifier stage and the downstream read-out chip. 
     
     
       13. The x-ray detector of  claim 1 , wherein the first amplifier stage is realized by a semiconductor slice, applied to the sensor slice via epitaxy. 
     
     
       14. An x-ray device, comprising:
 an x-ray radiation source; and 
 the x-ray detector of  claim 1 . 
 
     
     
       15. The x-ray detector of  claim 1 , wherein the first amplifier is configured to amplify signals from the sensor slice to provide the detector with amplified signals insensitive to effects of at least one of parasitic capacitance and parasitic resistance. 
     
     
       16. An x-ray detector, comprising:
 a sensor slice to directly convert x-ray radiation; 
 a downstream read-out chip; 
 an interposer, including a number of layers, connected between the sensor slice and the downstream read-out chip; and 
 a first amplifier stage, connected between the sensor slice and the interposer, embodied by at least one layer of the number of layers. 
 
     
     
       17. The x-ray detector of  claim 16 , wherein the at least one layer embodying the first amplifier stage is arranged upstream of a redistribution layer. 
     
     
       18. An x-ray device, comprising:
 an x-ray radiation source; and 
 the x-ray detector of  claim 16 . 
 
     
     
       19. The x-ray detector of  claim 16 , wherein the first amplifier is configured to amplify signals from the sensor slice to provide the detector with amplified signals insensitive to effects of at least one of parasitic capacitance and parasitic resistance.

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