Light emitting diode display substrate, manufacturing method thereof, and display device

Abstract

A light emitting diode display substrate, a manufacturing method thereof, and a display device are provided. The light emitting diode display substrate includes a base substrate; a light emitting diode located on the base substrate, and a self-assembled monolayer. The light emitting diode includes a graphene layer, and the graphene layer is located on a side of the light emitting diode close to the base substrate; the self-assembled monolayer is located between the graphene layer and the base substrate and connected with the graphene layer.

What is claimed is: 
     
       1. A light emitting diode display substrate, comprising:
 a base substrate; 
 a light emitting diode, located on the base substrate, wherein the light emitting diode comprises a graphene layer, and the graphene layer is a layer of the light emitting diode closest to the base substrate; and 
 a self-assembled monolayer, located between the graphene layer and the base substrate and connected with the graphene layer, 
 wherein the self-assembled monolayer comprises at least one type of organic molecule, two ends of the organic molecule comprise an azide functional group and an amino functional group respectively, and the azide functional group and a graphene molecule in the graphene layer are connected by a chemical bond. 
 
     
     
       2. The light emitting diode display substrate according to  claim 1 , wherein the organic molecule comprises 4-diazo-2,3,5,6-tetrafluorobenzoic acid ethylamine. 
     
     
       3. The light emitting diode display substrate according to  claim 1 , further comprising:
 an organic film, located between the self-assembled monolayer and the base substrate, and connected with the amino functional group in the self-assembled monolayer by a hydrogen bond. 
 
     
     
       4. The light emitting diode display substrate according to  claim 1 , wherein the light emitting diode further comprises a semiconductor layer located at a side of the graphene layer opposite from the self-assembled monolayer and a conductive layer located at a side of the semiconductor layer opposite from the graphene layer. 
     
     
       5. The light emitting diode display substrate according to  claim 4 , wherein the semiconductor layer is a gallium nitride based semiconductor layer. 
     
     
       6. The light emitting diode display substrate according to  claim 4 , further comprising:
 a protection layer, located on a part of an upper surface of the conductive layer opposite from the semiconductor layer. 
 
     
     
       7. The light emitting diode display substrate according to  claim 6 , wherein the graphene layer comprises a protrusion portion extending beyond the semiconductor layer in a first direction parallel to the base substrate, and the protection layer is located on a lateral side of the semiconductor layer and connected to the protrusion portion of the graphene layer. 
     
     
       8. The light emitting diode display substrate according to  claim 1 , further comprising:
 a thin film transistor, comprising a drain electrode, 
 wherein the drain electrode is electrically connected with the graphene layer. 
 
     
     
       9. The light emitting diode display substrate according to  claim 1 , wherein the light emitting diode has a size in a range from 1 μm to 100 μm. 
     
     
       10. A display device, comprising the light emitting diode display substrate according to  claim 1 . 
     
     
       11. A manufacturing method of a light emitting diode display substrate, comprising:
 forming a graphene layer on a transfer substrate; 
 forming a semiconductor layer and a conductive layer sequentially at a side of the graphene layer opposite from the transfer substrate to form a light emitting diode; 
 forming a self-assembled monolayer on a base substrate; and 
 transferring the light emitting diode from the transfer substrate to the self-assembled monolayer, to connect the graphene layer to the self-assembled monolayer, 
 wherein the self-assembled monolayer comprises at least one type of organic molecule, two ends of the organic molecule comprise an azide functional group and an amino functional group respectively, and 
 the azide functional group and a graphene molecule in the graphene layer are connected by a chemical bond. 
 
     
     
       12. The manufacturing method of the light emitting diode display substrate according to  claim 11 , wherein, before transferring the light emitting diode from the transfer substrate, the method comprises:
 forming a protection layer on a part of an upper surface of the conductive layer opposite from the semiconductor layer. 
 
     
     
       13. The manufacturing method of the light emitting diode display substrate according to  claim 12 , wherein the graphene layer comprises a protrusion portion extending beyond the semiconductor layer in a first direction parallel to the transfer substrate,
 wherein, before transferring the light emitting diode from the transfer substrate, the method further comprises: 
 forming the protection layer on a lateral side of the semiconductor layer and the protrusion portion of the graphene layer. 
 
     
     
       14. The manufacturing method of the light emitting diode display substrate according to  claim 12 , wherein transferring the light emitting diode from the transfer substrate to the self-assembled monolayer comprises:
 absorbing the protection layer by a transfer device to take away the light emitting diode from the transfer substrate and place it on the self-assembled monolayer, and heating the self-assembled monolayer to connect the azide functional group and the graphene molecule of the graphene layer by the chemical bond. 
 
     
     
       15. The manufacturing method of the light emitting diode display substrate according to  claim 11 , wherein forming the self-assembled monolayer on the base substrate comprises:
 forming an organic film on the base substrate, performing a treatment to a surface of the organic film, and forming the self-assembled monolayer on the organic film to connect the amino functional group in the self-assembled monolayer and the organic film by a hydrogen bond. 
 
     
     
       16. The manufacturing method of the light emitting diode display substrate according to  claim 11 , wherein transferring the light emitting diode to the self-assembled monolayer by a roll-to-roll process. 
     
     
       17. A light emitting diode display substrate, comprising:
 a base substrate; 
 a light emitting diode, located on the base substrate, wherein the light emitting diode comprises a graphene layer, and the graphene layer is a layer of the light emitting diode closest to the base substrate; and 
 a self-assembled monolayer, located between the graphene layer and the base substrate and connected with the graphene layer; 
 wherein the light emitting diode further comprises a semiconductor layer located at a side of the graphene layer opposite from the self-assembled monolayer and a conductive layer located at a side of the semiconductor layer opposite from the graphene layer; 
 the light emitting diode display substrate further comprising: 
 a protection layer, located on a part of an upper surface of the conductive layer opposite from the semiconductor layer; 
 wherein the graphene layer comprises a protrusion portion extending beyond the semiconductor layer in a first direction parallel to the base substrate, and the protection layer is located on a lateral side of the semiconductor layer and connected to the protrusion portion of the graphene layer. 
 
     
     
       18. The light emitting diode display substrate according to  claim 17 , further comprising:
 an organic film, located between the self-assembled monolayer and the base substrate, and connected with the amino functional group in the self-assembled monolayer by a hydrogen bond.