Organic light-emitting diode array substrate and manufacturing method thereof

Abstract

An organic light-emitting diode array substrate and manufacturing method thereof are provided. The manufacturing method includes forming a semiconductor layer, a gate insulating layer, a gate, and a first insulating layer on a substrate; forming a first metal pattern on the first insulating layer, and the first metal pattern connecting to the gate through the through hole; forming a second insulating layer covering the first metal pattern on the first insulating layer; and forming a second metal pattern on the second insulating layer so that the second metal pattern and the first metal pattern overlap each other to form a capacitor.

What is claimed is: 
     
       1. A manufacturing method of an organic light-emitting diode array substrate, comprising steps of:
 sequentially forming a semiconductor layer, a gate insulating layer, a gate, and a first insulating layer on a substrate, wherein the semiconductor layer comprises an active region, a source region, and a drain region; 
 forming a through hole in the first insulating layer to partially expose the gate; 
 forming a first metal pattern on the first insulating layer corresponding to a position of the gate, wherein the first metal pattern is connected to the gate through the through hole; 
 forming a second insulating layer on the first insulating layer to cover the first metal pattern; 
 forming a second metal pattern on the second insulating layer corresponding to a position of the first metal pattern, wherein the second metal pattern and the first metal pattern overlap each other to form a capacitor; 
 forming an interlayer dielectric layer on the second insulating layer to cover the second metal pattern; 
 forming a plurality of first vias passing through the gate insulating layer, the first insulating layer, the second insulating layer, and the interlayer dielectric layer at positions corresponding to the source region and the drain region; 
 forming at least two third metal patterns on the interlayer dielectric layer, wherein the third metal patterns are connected to the source region and the drain region through the first vias, respectively; 
 forming a planarization layer on the interlayer dielectric layer to cover the third metal patterns; and 
 forming an organic light-emitting diode and a pixel definition layer on the planarization layer. 
 
     
     
       2. The manufacturing method of the organic light-emitting diode array substrate according  claim 1 , wherein the step of forming the organic light-emitting diode and the pixel definition layer on the planarization layer comprises:
 forming a second via passing through the planarization layer to expose the third metal pattern connecting to the drain region; 
 forming a first electrode of the organic light-emitting diode on the planarization layer, wherein the first electrode is connected to the third metal pattern through the second via; and 
 forming the pixel definition layer on the planarization layer, wherein the pixel definition layer comprises an opening exposing the first electrode. 
 
     
     
       3. The manufacturing method of the organic light-emitting diode array substrate according  claim 1 , wherein an area of the second metal pattern and an area of the first metal are both larger than an area of the gate. 
     
     
       4. The manufacturing method of the organic light-emitting diode array substrate according  claim 1 , wherein before the step of sequentially forming the semiconductor layer, the gate insulating layer, the gate, and the first insulating layer on the substrate, further comprises following step of:
 forming a first flexible layer, an inorganic film layer, a second flexible layer, and a buffer layer on the substrate, wherein the semiconductor layer is formed on the buffer layer. 
 
     
     
       5. The manufacturing method of the organic light-emitting diode array substrate according  claim 1 , wherein the third metal patterns connecting to the source region and the drain region, the gate, and the semiconductor layer constitute a first transistor. 
     
     
       6. A manufacturing method of an organic light-emitting diode array substrate, comprising steps of:
 sequentially forming a semiconductor layer, a gate insulating layer, a gate, and a first insulating layer on a substrate, wherein the semiconductor layer comprises an active region, a source region, and a drain region; 
 forming a through hole in the first insulating layer to partially expose the gate; 
 forming a first metal pattern on the first insulating layer corresponding to a position of the gate, wherein the first metal pattern is connected to the gate through the through hole; 
 forming a second insulating layer on the first insulating layer to cover the first metal pattern; and 
 forming a second metal pattern on the second insulating layer corresponding to a position of the first metal pattern, wherein the second metal pattern and the first metal pattern overlap each other to form a capacitor, wherein an area of the second metal pattern and an area of the first metal are larger than an area of the gate. 
 
     
     
       7. The manufacturing method of the organic light-emitting diode array substrate according  claim 6 , wherein the manufacturing method further comprises following steps of:
 forming an interlayer dielectric layer on the second insulating layer to cover the second metal pattern; and 
 forming a third metal pattern on the interlayer dielectric layer. 
 
     
     
       8. The manufacturing method of the organic light-emitting diode array substrate according  claim 7 , wherein the step of forming a third metal pattern on the interlayer dielectric layer comprises:
 forming a plurality of first vias passing through the gate insulating layer, the first insulating layer, the second insulating layer, and the interlayer dielectric layer at positions corresponding to the source region and the drain region; and 
 forming at least two third metal patterns on the interlayer dielectric layer, wherein each of the third metal patterns are connected to the source region and the drain region through the first vias, respectively. 
 
     
     
       9. The manufacturing method of the organic light-emitting diode array substrate according  claim 7 , wherein the manufacturing method further comprises following steps of:
 forming a planarization layer on the interlayer dielectric layer to cover the third metal pattern; and 
 forming an organic light-emitting diode and a pixel definition layer on the planarization layer. 
 
     
     
       10. The manufacturing method of the organic light-emitting diode array substrate according  claim 9 , wherein the step of forming the organic light-emitting diode and the pixel definition layer on the planarization layer comprises:
 forming a second via passing through the planarization layer to expose the third metal pattern connecting to the drain region; 
 forming a first electrode of the organic light-emitting diode on the planarization layer, wherein the first electrode is connected to the third metal pattern through the second via; and 
 forming the pixel definition layer on the planarization layer, wherein the pixel definition layer comprises an opening exposing the first electrode. 
 
     
     
       11. The manufacturing method of the organic light-emitting diode array substrate according  claim 6 , wherein before the step of sequentially forming the semiconductor layer, the gate insulating layer, the gate, and the first insulating layer on the substrate, wherein the semiconductor layer comprises the active region, the source region, and the drain region further comprises following step of:
 forming a first flexible layer, an inorganic film layer, a second flexible layer, and a buffer layer on the substrate; wherein the semiconductor layer is formed on the buffer layer. 
 
     
     
       12. The manufacturing method of the organic light-emitting diode array substrate according  claim 8 , wherein the third metal patterns connecting to the source region and the drain region, the gate, and the semiconductor layer constitute a first transistor. 
     
     
       13. An organic light-emitting diode array substrate, comprising a substrate, a semiconductor layer, a gate insulating layer, a gate, a first insulating layer, a first metal pattern, a second insulating layer, and a second metal pattern;
 the semiconductor layer disposed on the substrate, and the semiconductor layer comprising an active region, a source region, and a drain region; 
 the gate insulating layer covering the semiconductor layer; 
 the gate disposed on the gate insulating layer and corresponding to the active region of the semiconductor layer; 
 the first insulating layer disposed on the gate and the first insulating layer comprising a through hole, wherein the through hole partially exposes the gate; 
 the first metal pattern disposed on the first insulating layer, wherein the first metal pattern is connected to the gate through the through hole; 
 the second insulating layer disposed on the first insulating layer and covering the first metal pattern; 
 the second metal pattern disposed on the second insulating layer and corresponding to a position of the first metal pattern, wherein the second metal pattern and the first metal pattern overlap each other to form a capacitor, wherein an area of the second metal pattern and an area of the first metal are larger than an area of the gate. 
 
     
     
       14. The organic light-emitting diode array substrate according to  claim 13 , wherein a pixel unit of the organic light-emitting diode array substrate comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, the capacitor, and an organic light-emitting diode.