Perovskite film and manufacturing method thereof

Abstract

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH 3 ) 2 MA (n−1) M 1 n X (3n+1)   formula (1), wherein the definitions of R, MA, M 1 , X, and n are as defined above.

What is claimed is: 
     
       1. A manufacturing method of a perovskite film, comprising:
 coating a perovskite precursor material in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M; and 
 performing an infrared light irradiation on the perovskite precursor material to cure the perovskite precursor material to form a thin film comprising a compound represented by formula (1),
   (RNH 3 ) 2 MA (n−1) M 1   n X (3n+1)   formula (1),
 
 
 wherein each R is independently H, a C 1  to CM alkyl group, a C 1  to C 20  cycloalkyl group, a C 1  to C 20  carboxyl group, or a C 1  to C 20  aralkyl group; MA is methylamine; M 1  is Ca, Sr, Cd, Cu, Ni, Mn, Fe, Co, Pd, Ge, Sn, Pb, Yb, Eu, or a combination thereof; X is Cl, Br, I, or a combination thereof; n is an integer of 1 to 50, 
 wherein the perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. 
 
     
     
       2. The manufacturing method of the perovskite film of  claim 1 , wherein a method of coating the perovskite precursor material comprises slit coating, blade coating, air knife coating, or inkjet coating. 
     
     
       3. The manufacturing method of the perovskite film of  claim 1 , wherein the infrared light irradiation uses an infrared light with a wavelength between 700 nm and 1400 nm. 
     
     
       4. The manufacturing method of the perovskite film of  claim 1 , wherein the concentration of the perovskite precursor material is between 0.05 M and 0.6 M, and the perovskite film has the single 2D phase structure. 
     
     
       5. The manufacturing method of the perovskite film of  claim 4 , wherein a time of the infrared light irradiation is between 5 seconds and 120 seconds. 
     
     
       6. The manufacturing method of the perovskite film of  claim 4 , wherein the concentration of the perovskite precursor material is between 0.2 M and 0.6 M. 
     
     
       7. The manufacturing method of the perovskite film of  claim 6 , wherein a time of the infrared light irradiation is between 5 seconds and 20 seconds. 
     
     
       8. The manufacturing method of the perovskite film of  claim 4 , wherein the concentration of the perovskite precursor material is less than 0.2 M. 
     
     
       9. The manufacturing method of the perovskite film of  claim 8 , wherein a time of the infrared light irradiation is between 60 seconds and 120 seconds. 
     
     
       10. The manufacturing method of the perovskite film of  claim 1 , wherein the concentration of the perovskite precursor material is greater than 0.6 M and not more than 1.5 M, and the perovskite film has the structure in which the 3D phase structure is mixed with the single 2D phase structure. 
     
     
       11. The manufacturing method of the perovskite film of  claim 10 , wherein a time of the infrared light irradiation is between 5 seconds and 40 seconds. 
     
     
       12. A perovskite film having a single 2D phase structure, wherein the perovskite film comprises a compound represented by formula (1),
   (RNH 3 ) 2 MA (n−1) M 1   n X (3n+1)   formula (1),
 
 wherein each R is independently H, a C 1  to CM alkyl group, a C 1  to C 20  cycloalkyl group, a C 1  to C 20  carboxyl group, or a C 1  to C 20  aralkyl group; MA is methylamine; M 1  is Ca, Sr, Cd, Cu, Ni, Mn, Fe, Co, Pd, Ge, Sn, Pb, Yb, Eu, or a combination thereof; X is Cl, Br, I, or a combination thereof; n is an integer of 1 to 50, 
 wherein in a photoluminescence spectrum, a peak appears in a wavelength range of 550 nm to 650 nm, and an FWHM thereof is between 20 nm and 40 nm, or a peak appears in a wavelength range of 700 nm to 800 nm, and an FWHM thereof is between 30 nm and 65 nm. 
 
     
     
       13. The perovskite film of  claim 12 , wherein a thickness of the perovskite film is between 5 nm and 4 μm.