US11302685B2ActiveUtilityA1
Fully-printed stretchable thin-film transistors and integrated logic circuits
Est. expiryNov 17, 2037(~11.4 yrs left)· nominal 20-yr term from priority
H10P 95/00H10P 14/6922H10P 14/6346H10P 14/683H10P 14/66H10W 70/688H10W 70/611H10D 86/60H10D 86/40H10D 86/01H10D 64/691H10D 30/6739H10D 86/85Y02E10/549H03K 19/21H01L 51/0537H01L 21/02288H01L 21/02109H01L 21/84H01L 51/0097H01L 23/5387H01L 51/105H01L 51/055H01L 27/016H01L 21/3105H01L 27/1214H01L 21/02118H01L 51/0048H01L 29/517H01L 29/4908H01L 21/02126H10K 85/221H10K 10/84H10K 10/481H10K 10/478H10K 77/111
77
PatentIndex Score
2
Cited by
94
References
16
Claims
Abstract
Printable and stretchable thin-film devices and fabrication techniques are provided for forming fully-printed, intrinsically stretchable thin-film transistors and integrated logic circuits using stretchable elastomer substrates such as polydimethylsiloxane (PDMS), semiconducting carbon nanotube network as channel, unsorted carbon nanotube network as source/drain/gate electrodes, and BaTiO3/PDMS composite as gate dielectric. Printable stretchable dielectric layer ink may be formed by mixing barium titanate nanoparticle (BaTiO3) with PDMS using 4-methyl-2-pentanone as solvent.
Claims
exact text as granted — not AI-modifiedWhat is claimed:
1. A thin-film device comprising:
a stretchable elastomer substrate; and
one or more thin-film transistor elements comprising a source electrode, a drain electrode, and a gate electrode each formed of carbon nanotubes (CNTs) and comprising a stretchable hybrid gate dielectric, the one or more thin-film transistor elements each being printed on the stretchable elastomer substrate and forming one or more stretchable thin-film transistor elements;
wherein the hybrid gate dielectric comprises barium titanate (BaTiO3) nanoparticles dispersed in polydimethylsiloxane (PDMS) as a gate insulator; and
wherein the BaTiO3 nanoparticles are cubic phase BaTiO3 nanoparticles.
2. The thin-film device of claim 1 , wherein the BaTiO3 nanoparticles have a particle size of 50 nm.
3. The thin-film device of claim 1 , wherein at least some of the carbon nanotubes extend between the source electrode and the drain electrode and comprise semiconducting single-walled carbon nanotubes.
4. The thin-film device of claim 1 , wherein the carbon nanotubes of the source electrode, the drain electrode, and the gate electrode are unsorted carbon nanotubes.
5. The thin-film device of claim 1 , further comprising a PDMS encapsulation layer encapsulating the one or more stretchable thin-film transistor elements.
6. The thin-film device of claim 1 , wherein the one or more stretchable thin-film transistor elements are stretchable beyond a 50% strain along a channel length.
7. The thin-film device of claim 6 , wherein the one or more stretchable thin-film transistor elements are stretchable beyond a 60% strain along the channel length.
8. The thin-film device of claim 6 , wherein the one or more stretchable thin-film transistor elements are stretchable beyond a 100% strain along the channel length.
9. The thin-film device of claim 1 , wherein the one or more stretchable thin-film transistor elements are stretchable beyond a 50% strain along a channel width.
10. The thin-film device of claim 9 , wherein the one or more stretchable thin-film transistor elements are stretchable beyond a 60% strain along the channel width.
11. The thin-film device of claim 7 , wherein the one or more stretchable thin-film transistor elements are stretchable beyond a 100% strain along the channel width.
12. The thin-film device of claim 1 , wherein the one or more thin-film transistor elements are connected to form an inverter.
13. The thin-film device of claim 1 , wherein the one or more thin-film transistor elements are connected to form a NOR gate.
14. The thin-film device of claim 1 , wherein the one or more thin-film transistor elements are connected to form a NAND gate.
15. The thin-film device of claim 1 , comprising a plurality of stretchable thin-film transistor elements, wherein the plurality of stretchable thin-film transistor elements comprises an inverter, a NOR gate, and/or a NAND gate.
16. The thin-film device of claim 1 , wherein the stretchable elastomer substrate is a polydimethylsiloxane (PDMS) substrate, a silicone substrate, a polyurethaneacrylate (PUA) substrate, or a thermoplastic elastomer (TPE) substrate.Cited by (0)
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