High frequency module

Abstract

A high frequency module in which warpage does not easily occur is provided by adjusting linear expansion coefficient, glass transition temperature, and elastic modulus of a sealing resin layer. The high frequency module includes a wiring board, a first component mounted on a lower surface of the wiring board, a plurality of connection terminals, a first sealing resin layer that coats the first component and the connection terminal, a plurality of second components mounted on an upper surface of the wiring board, a second sealing resin layer coating the second components, and a shield film. The first sealing resin layer is formed thinner than the second sealing resin layer, and the first sealing resin layer has the linear expansion coefficient of the resin smaller than the linear expansion coefficient of the resin of the second sealing resin layer.

The invention claimed is: 
     
       1. A high frequency module comprising:
 a wiring board; 
 a first component mounted on one main surface of the wiring board; 
 a first sealing resin layer having a contact surface, an opposing surface, and a side surface, and sealing the first component, wherein the contact surface of the first sealing resin layer comes into contact with the one main surface of the wiring board, the opposing surface of the first sealing resin layer opposes the contact surface of the first sealing resin layer, and the side surface of the first sealing resin layer connects end edges of the contact surface of the first sealing resin layer and the opposing surface of the first sealing resin layer to each other; 
 a second component mounted on another main surface of the wiring board; and 
 a second sealing resin layer having a contact surface, an opposing surface, and a side surface, and sealing the second component, wherein the contact surface of the second sealing resin layer comes into contact with the other main surface of the wiring board, the opposing surface of the second sealing resin layer opposes the contact surface of the second sealing resin layer, and the side surface of the second sealing resin layer connects end edges of the contact surface of the second sealing resin layer and the opposing surface of the second sealing resin layer to each other, 
 wherein the first component is at least partially exposed from the opposing surface of the first sealing resin layer, 
 wherein the first sealing resin layer has a linear expansion coefficient smaller than a linear expansion coefficient of the second sealing resin layer, and 
 wherein the first sealing resin layer has a glass transition temperature higher than a glass transition temperature of the second sealing resin layer and/or the first sealing resin layer has an elastic modulus larger than an elastic modulus of the second sealing resin layer. 
 
     
     
       2. The high frequency module according to  claim 1 , wherein the first component is a semiconductor device. 
     
     
       3. The high frequency module according to  claim 1 , wherein a height from the one main surface of the wiring board to the opposing surface of the first sealing resin layer is lower than a height of the second sealing resin layer from the other main surface of the wiring board to the opposing surface of the second sealing resin layer. 
     
     
       4. The high frequency module according to  claim 1 , further comprising a connection terminal embedded in the first sealing resin layer,
 wherein the connection terminal has one end connected to the one main surface of the wiring board and another end exposed from the opposing surface of the first sealing resin layer. 
 
     
     
       5. The high frequency module according to  claim 4 , wherein the connection terminal is a bump. 
     
     
       6. The high frequency module according to  claim 1 , further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer. 
     
     
       7. The high frequency module according to  claim 2 , wherein a height from the one main surface of the wiring board to the opposing surface of the first sealing resin layer is lower than a height of the second sealing resin layer from the other main surface of the wiring board to the opposing surface of the second sealing resin layer. 
     
     
       8. The high frequency module according to  claim 2 , further comprising a connection terminal embedded in the first sealing resin layer,
 wherein the connection terminal has one end connected to the one main surface of the wiring board and another end exposed from the opposing surface of the first sealing resin layer. 
 
     
     
       9. The high frequency module according to  claim 3 , further comprising a connection terminal embedded in the first sealing resin layer,
 wherein the connection terminal has one end connected to the one main surface of the wiring board and another end exposed from the opposing surface of the first sealing resin layer. 
 
     
     
       10. The high frequency module according to  claim 2 , further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer. 
     
     
       11. The high frequency module according to  claim 3 , further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer. 
     
     
       12. The high frequency module according to  claim 4 , further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer. 
     
     
       13. The high frequency module according to  claim 5 , further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer.