Memory device comprising an electrically floating body transistor

Abstract

A memory cell comprising includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region.

That which is claimed is: 
     
       1. A semiconductor memory cell comprising:
 a first bipolar device having a first floating base region, a first collector, and a first emitter; 
 a second bipolar device having a second floating base region, a second collector, and a second emitter; 
 a third bipolar device having a third floating base region, a third collector, and a third emitter; and 
 a gate region positioned in between said first collector and said first emitter, said gate region positioned in between said second collector and said second emitter, and said gate region being positioned in between said third collector and said third emitter; 
 wherein said first floating base region, said second floating base region, and said third floating base region are common and are configured to be charged to a level indicative of a state of said semiconductor memory cell; 
 wherein said first collector and said second collector are common; 
 wherein said state of said semiconductor memory cell is maintained through a bias applied through said first and second collectors. 
 
     
     
       2. The semiconductor memory cell of  claim 1  configured such that maintaining said state of said semiconductor memory cell through said bias applied through said first and second collectors does not require any interruption to access to said memory cell. 
     
     
       3. The semiconductor memory cell of  claim 1 , wherein said first and second collectors are configured to be connected to one or more additional semiconductor memory cells and to maintain all of said semiconductor memory cells connected to said first and second collectors. 
     
     
       4. The semiconductor memory cell of  claim 1 , wherein application of a bias to said first and second collectors increases a size of a memory window of said semiconductor memory cell. 
     
     
       5. The semiconductor memory cell of  claim 1 , wherein said third bipolar device is configured to read or write to said semiconductor memory cell. 
     
     
       6. The semiconductor memory cell of  claim 1 , wherein at least one of said first or second bipolar devices is configured to maintain said state of said semiconductor memory cell. 
     
     
       7. The semiconductor memory cell of  claim 1  fabricated in a silicon-on-insulator (SOI) substrate. 
     
     
       8. The semiconductor memory cell of  claim 7 , wherein depths of said first, second, and third floating base regions are greater than depths of said first, second, and third emitters, respectively. 
     
     
       9. The semiconductor memory cell of  claim 1  formed in a fin structure fabricated on a bulk silicon substrate. 
     
     
       10. The semiconductor memory cell of  claim 1  formed in a fin structure fabricated on a silicon-on-insulator (SOI) substrate. 
     
     
       11. A semiconductor memory array comprising a plurality of semiconductor memory cells arranged in a matrix of rows and columns, wherein each of said semiconductor memory cells comprises:
 a first bipolar device having a first floating base region, a first collector, and a first emitter; 
 a second bipolar device having a second floating base region, a second collector, and a second emitter; 
 a third bipolar device having a third floating base region, a third collector, and a third emitter; and 
 a gate region positioned in between said first collector and said first emitter, said gate region positioned in between said second collector and said second emitter, and said gate region being positioned in between said third collector and said third emitter; 
 wherein said first floating base region, said second floating base region, and said third floating base region are common and are configured to be charged to a level indicative of a state of said semiconductor memory cell; 
 wherein said first collector and said second collector are common; 
 wherein said state of said semiconductor memory cell is maintained through a bias applied through said first and second collectors; 
 wherein said first and second collectors are commonly connected to at least two of said semiconductor memory cells; 
 wherein when a first semiconductor memory cell of said at least two of said semiconductor memory cells is in a first state and a second semiconductor memory cell of said at least two of said semiconductor memory cells is in a second state, application of said bias applied through said first and second collectors maintains said first semiconductor memory cell in said first state and said second semiconductor memory cell in said second state. 
 
     
     
       12. The semiconductor memory array of  claim 11  configured such that maintaining said state of said memory cells through a bias applied through said first and second collectors does not require any interruption to access to said semiconductor memory cells. 
     
     
       13. The semiconductor memory array of  claim 11 , wherein said first and second collectors are configured to maintain all of said semiconductor memory cells connected to said first and second collectors. 
     
     
       14. The semiconductor memory array of  claim 11 , wherein application of a bias to said first and second collectors increases a size of a memory window of said semiconductor memory cell. 
     
     
       15. The semiconductor memory array of  claim 11 , wherein said third bipolar device is configured to read or write to said semiconductor memory cell. 
     
     
       16. The semiconductor memory array of  claim 11 , wherein at least one of said first or second bipolar devices is configured to maintain said state of said semiconductor memory cell. 
     
     
       17. The semiconductor memory array of  claim 11  fabricated in a silicon-on-insulator (SOI) substrate. 
     
     
       18. The semiconductor memory array of  claim 17 , wherein depths of said first, second, and third floating base regions are greater than depths of said first, second, and third emitters, respectively. 
     
     
       19. The semiconductor memory array of  claim 11  formed in a fin structure fabricated on a bulk silicon substrate. 
     
     
       20. The semiconductor memory array of  claim 11  formed in a fin structure fabricated on a silicon-on-insulator (SOI) substrate.