US11384253B2ActiveUtilityA1
Dual additive composition for polishing memory hard disks exhibiting edge roll off
Est. expiryJan 11, 2039(~12.5 yrs left)· nominal 20-yr term from priority
Inventors:Tong Li
H10P 52/403H10P 52/402C09G 1/02G11B 5/84C23F 3/06C23F 1/30C09K 13/00H01L 21/30625H01L 21/3212
53
PatentIndex Score
0
Cited by
17
References
18
Claims
Abstract
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1. A chemical-mechanical polishing composition comprising:
(a) an abrasive comprising colloidal silica,
(b) about 0.001 wt. % to about 1 wt. % of a compound of formula (I):
wherein R is
CH 2 ═CHCONHC(CH 3 ) 2 CH 2 —,
wherein X is independently O or a covalent bond,
or an alkali metal salt thereof,
(c) a compound of formula (II):
wherein R 9 is H or a hydroxyalkyl, and
wherein m is an integer of from 2 to about 6,
(d) hydrogen peroxide, and
(e) water,
wherein the polishing composition has a pH of about 1 to about 5.
2. The polishing composition of claim 1 , wherein the colloidal silica has an average particle size of about 10 nm to about 200 nm.
3. The polishing composition of claim 1 , wherein the abrasive further comprises fused silica.
4. The polishing composition of claim 3 , wherein the fused silica has an average particle size of about 100 nm to about 800 nm.
5. The polishing composition of claim 1 , wherein the compound of formula (I) is 2 acrylamido-2-methyl-1-propanesulfonic acid.
6. The polishing composition of claim 1 , wherein the compound of formula (II) is selected from ethylenediamine, 1,3-diaminopropane, and combinations thereof.
7. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.001 wt. % to about 1 wt. % of the compound of formula (II).
8. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.1 wt. % to about 10 wt. % of a combination of colloidal silica and fused silica.
9. A method of chemically mechanically polishing a substrate comprising:
(i) providing a substrate,
(ii) providing a polishing pad,
(iii) providing a chemical-mechanical polishing composition comprising:
(a) an abrasive comprising colloidal silica,
(b) about 0.001 wt. % to about 1 wt. % of a compound of formula (I):
wherein R is
CH 2 ═CHCONHC(CH 3 ) 2 CH 2 —,
wherein X is independently O or a covalent bond,
or an alkali metal salt thereof,
(c) a compound of formula (II):
wherein R 9 is H or a hydroxyalkyl, and
wherein m is an integer of from 2 to about 6,
(d) hydrogen peroxide, and
(e) water,
wherein the polishing composition has a pH of about 1 to about 5,
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
(v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of a surface of the substrate to thereby polish the substrate.
10. The method of claim 9 , wherein the colloidal silica has an average particle size of about 10 nm to about 200 nm.
11. The method of claim 9 , wherein the abrasive further comprises fused silica.
12. The method of claim 11 , wherein the fused silica has an average particle size of about 100 nm to about 800 nm.
13. The method of claim 9 , wherein the compound of formula (1) is 2 acrylamido-2-methyl-1-propanesulfonic acid.
14. The method of claim 9 , wherein the compound of formula (II) is selected from ethylenediamine, 1,3-diaminopropane, and combinations thereof.
15. The method of claim 9 , wherein the polishing composition comprises about 100 ppm to about 500 ppm of the compound of formula (I).
16. The method of claim 9 , wherein the polishing composition comprises about 100 ppm to about 2000 ppm of the compound of formula (II).
17. The method of claim 9 , wherein the polishing composition comprises about 0.1 wt. % to about 10 wt % of a combination of colloidal silica and fused silica.
18. The method of claim 9 , wherein the substrate is a nickel-phosphorous-coated aluminum memory disk, wherein the substrate comprises nickel-phosphorous on a surface of the substrate, and wherein at least a portion of the nickel-phosphorous on a surface of the substrate is abraded to polish the substrate.Cited by (0)
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