Substrate processing apparatus

Abstract

A substrate processing apparatus capable of preventing deflection of exhaust flow which may occur when an asymmetric exhaust structure is introduced includes: an exhaust unit providing an exhaust space surrounding a reaction space; an exhaust port connected to the exhaust unit; and a flow control unit disposed in the exhaust space, wherein the exhaust port is arranged asymmetrically with respect to the reaction space, and the flow control unit may include: an upper flow control plate including a plurality of first through holes; and a lower flow control plate disposed below the upper flow control plate and including a plurality of second through holes.

What is claimed is: 
     
       1. A substrate processing apparatus comprising:
 an exhaust unit providing an exhaust space surrounding a reaction space; 
 an exhaust port connected to the exhaust unit; and 
 a flow control unit disposed in the exhaust space, 
 wherein the exhaust port is disposed asymmetrically with respect to the reaction space, and 
 the flow control unit comprises: 
 an upper flow control plate comprising a plurality of first through holes; and 
 a lower flow control plate disposed below the upper flow control plate and comprising a plurality of second through holes, 
 wherein the exhaust unit further comprises: 
 a partition wall defining a side portion of the reaction space; 
 an outer wall parallel to the partition wall; and 
 a connecting wall extending to connect the partition wall to the outer wall, 
 wherein the substrate processing apparatus further comprises a support configured to support the exhaust unit, and 
 wherein the reaction space and the exhaust space communicate with each other through a gap between the partition wall and the support. 
 
     
     
       2. The substrate processing apparatus of  claim 1 , wherein
 the plurality of first through holes are arranged along a first circumference having a first diameter, and 
 the plurality of second through holes are arranged along a second circumference having a second diameter greater than the first diameter. 
 
     
     
       3. The substrate processing apparatus of  claim 2 , wherein an exhaust flow from the exhaust space towards the reaction space is generated between the upper flow control plate and the lower flow control plate. 
     
     
       4. The substrate processing apparatus of  claim 3 , wherein the exhaust flow comprises:
 a first exhaust flow to move away from the exhaust port in a first region of the exhaust space adjacent to the exhaust port; and 
 a second exhaust flow directed towards the exhaust port in a second region of the exhaust space apart from the exhaust port. 
 
     
     
       5. The substrate processing apparatus of  claim 1 , wherein diameters of the plurality of first through holes are different from diameters of the plurality of second through holes. 
     
     
       6. The substrate processing apparatus of  claim 1 , wherein densities of the plurality of first through holes are different from densities of the plurality of second through holes. 
     
     
       7. The substrate processing apparatus of  claim 1 , wherein the plurality of first through holes are disposed to alternate with the plurality of second through holes. 
     
     
       8. The substrate processing apparatus of  claim 1 , wherein
 the upper flow control plate comprises a first region adjacent to the exhaust port and a second region apart from the exhaust port, 
 through holes of the first region among the plurality of first through holes are arranged along a third circumference having a third diameter, and 
 through holes of the second region among the plurality of first through holes are arranged along a fourth circumference having a fourth diameter greater than the third diameter. 
 
     
     
       9. The substrate processing apparatus of  claim 1 , wherein at least one of the upper flow control plate and the lower flow control plate is arranged to contact the partition wall and the outer wall. 
     
     
       10. The substrate processing apparatus of  claim 1 , wherein the lower flow control plate comprises:
 a first portion extending between the partition wall and the outer wall; and 
 a second portion extending from the first portion and contacting the support, 
 wherein the plurality of second through holes are arranged to penetrate the first portion. 
 
     
     
       11. The substrate processing apparatus of  claim 1 , wherein the outer wall comprises an opening connecting the exhaust unit to the exhaust port, and the opening is above the gap. 
     
     
       12. The substrate processing apparatus of  claim 11 , wherein the upper flow control plate and the lower flow control plate are disposed between the opening and the gap. 
     
     
       13. The substrate processing apparatus of  claim 12 , wherein gas in the reaction space is exhausted to the exhaust port along a path in the exhaust space, and
 the path comprises: 
 a first path extending from the gap towards the outer wall; 
 a second path extending from the first path to penetrate the lower flow control plate; 
 a third path extending from the second path towards the partition wall; and 
 a fourth path extending from the third path to penetrate the upper flow control plate. 
 
     
     
       14. The substrate processing apparatus of  claim 1 , wherein the flow control unit is configured to generate exhaust of first exhaust efficiency in an exhaust space adjacent to the exhaust port, and to generate exhaust of second exhaust efficiency higher than the first exhaust efficiency in an exhaust space apart from the exhaust port. 
     
     
       15. A substrate processing apparatus comprising:
 an exhaust unit providing an exhaust space surrounding a reaction space; 
 a support configured to support the exhaust unit; 
 an exhaust port connected to the exhaust unit; and 
 a flow control unit disposed in the exhaust space, 
 wherein the exhaust port is disposed asymmetrically with respect to the reaction space, and 
 the flow control unit is configured to generate exhaust of first exhaust efficiency in an exhaust space adjacent to the exhaust port, and to generate exhaust of second exhaust efficiency higher than the first exhaust efficiency in an exhaust space apart from the exhaust port, 
 wherein the exhaust unit further comprises a partition wall defining a side portion of the reaction space, and 
 wherein the reaction space and the exhaust space communicate with each other through a gap between the partition wall and the support. 
 
     
     
       16. The substrate processing apparatus of  claim 15 , wherein the flow control unit comprises a flow control plate comprising a plurality of through holes arranged to surround the reaction space. 
     
     
       17. A substrate processing apparatus comprising:
 an exhaust unit providing an exhaust space surrounding a reaction space; 
 an exhaust port connected to the exhaust unit; and 
 a flow control unit disposed in the exhaust space, 
 wherein the exhaust port is disposed asymmetrically with respect to the reaction space, and 
 the flow control unit is configured to: 
 generate a first exhaust flow to move away from the exhaust port in a first region of the exhaust space adjacent to the exhaust port; and 
 generate a second exhaust flow directed towards the exhaust port in a second region of the exhaust space apart from the exhaust port, 
 wherein the exhaust unit further comprises a partition wall defining a side portion of the reaction space, and 
 wherein the reaction space and the exhaust space communicate with each other through a gap below the partition wall. 
 
     
     
       18. The substrate processing apparatus of  claim 17 ,
 wherein exhaust in the exhaust space adjacent to the exhaust port has first exhaust efficiency by the first exhaust to move away from the exhaust port, and 
 exhaust in the exhaust space apart from the exhaust port has second exhaust efficiency higher than the first exhaust efficiency by the second exhaust flow directed towards the exhaust port.