Optical sensor and manufacturing method thereof, display device and display apparatus

Abstract

The present disclosure provides an optical sensor, a manufacturing method thereof, a display device, and a display apparatus, and relates to the display technology. The optical sensor includes a thin film transistor and a PIN diode on a surface of a drain of the thin film transistor. A material of a P region of the PIN diode, a material of an I region of the PIN diode, and a material of an N region of the PIN diode are oxides. Since the PIN diode is made of oxides rather than amorphous silicon, hydrogen is not introduced. Therefore, the performance of the thin film transistor will not be affected, thereby achieving the improvement of the performance of the display device and the display effect.

What is claimed is: 
     
       1. An optical sensor comprising:
 a thin film transistor; and 
 a PIN diode on a surface of a drain of the thin film transistor, the PIN diode being in direct contact with the surface of the drain, 
 wherein a material of a P region of the PIN diode, a material of an I region of the PIN diode, and a material of an N region of the PIN diode respectively comprise oxides. 
 
     
     
       2. The optical sensor according to  claim 1 ,
 wherein the material of the P region of the PIN diode comprises a P-type oxide, 
 wherein the material of the I region of the PIN diode comprises IGZO, 
 wherein the material of the N region of the PIN diode comprises IGZO, and 
 wherein an oxygen content of IGZO of the N region is lower than an oxygen content of IGZO of the I region. 
 
     
     
       3. The optical sensor according to  claim 2 , wherein the P-type oxide comprises at least one of Cu 2 O or SnO. 
     
     
       4. A display device comprising the optical sensor according to  claim 1 . 
     
     
       5. The display device according to  claim 4 , further comprising:
 a black matrix on the thin film transistor; 
 a color film on the PIN diode and partially covering the black matrix; 
 an organic cover layer on the black matrix and the color film; 
 a spacer layer on the organic cover layer; 
 an auxiliary electrode on the spacer layer; and 
 a transparent cathode on the organic cover layer, the spacer layer, and the auxiliary electrode. 
 
     
     
       6. A display apparatus comprising the optical sensor according to  claim 1 . 
     
     
       7. The display device according to  claim 4 ,
 wherein the material of the P region of the PIN diode comprises a P-type oxide, 
 wherein the material of the I region of the PIN diode comprises IGZO, 
 wherein the material of the N region of the PIN diode comprises IGZO, and 
 wherein an oxygen content of IGZO of the N region is lower than an oxygen content of IGZO of the I region. 
 
     
     
       8. The display device according to  claim 7 , wherein the P-type oxide comprises at least one of Cu 2 O or SnO. 
     
     
       9. The display apparatus according to  claim 6 ,
 wherein the material of the P region of the PIN diode comprises a P-type oxide, 
 wherein the material of the I region of the PIN diode comprises IGZO, 
 wherein the material of the N region of the PIN diode comprises IGZO, and 
 wherein an oxygen content of IGZO of the N region is lower than an oxygen content of IGZO of the I region. 
 
     
     
       10. The display apparatus according to  claim 9 , wherein the P-type oxide comprises at least one of Cu 2 O or SnO. 
     
     
       11. A method for manufacturing an optical sensor, comprising:
 manufacturing a thin film transistor comprising a gate, a source, and a drain; and 
 forming a P region, an I region, and an N region of a PIN diode on a surface of the drain by using oxides, the PIN diode being in direct contact with the surface of the drain. 
 
     
     
       12. The method according to  claim 11 , wherein forming the P region, the I region, and the N region of the PIN diode on the surface of the drain by using oxides comprises:
 depositing a first IGZO layer of the N region, a second IGZO layer of the I region, and a P-type oxide layer of the P region on the surface of the drain sequentially, wherein an oxygen content of the first IGZO layer of the N region is lower than an oxygen content of the second IGZO layer of the I region; and 
 patterning the first IGZO layer of the N region, the second IGZO layer of the I region, and the P-type oxide layer of the P region to form the PIN diode. 
 
     
     
       13. The method according to  claim 12 , wherein the P-type oxide layer comprises at least one of Cu 2 O and SnO. 
     
     
       14. The method according to  claim 12 , wherein before patterning the first IGZO layer of the N region, the second IGZO layer of the I region, and the P-type oxide layer of the P region to form the PIN diode, the method further comprises:
 depositing a first transparent conductive layer on the P-type oxide layer of the P region.