US11417713B2ActiveUtilityA1

Substrate and manufacturing method therefor, and electronic apparatus

70
Assignee: BOE TECHNOLOGY GROUP CO LTDPriority: Dec 19, 2017Filed: Feb 8, 2021Granted: Aug 16, 2022
Est. expiryDec 19, 2037(~11.4 yrs left)· nominal 20-yr term from priority
H10K 59/1315H10K 59/131H10K 59/88H10D 86/441H10D 86/85H10D 86/60H01L 27/3244H01L 27/1116H01L 27/3223H01L 27/016H10B 10/18H10K 59/12H10K 59/122
70
PatentIndex Score
0
Cited by
15
References
20
Claims

Abstract

A substrate and a manufacturing method therefor, and an electronic device are provided. The substrate includes: a base substrate including a working region, and a non-working region outside of the working region, the non-working region including a peripheral circuit region near the working region and a non-circuit region away from the working region; a peripheral circuit in the peripheral circuit region; a common electrode lead in the non-working region; a common electrode; and a bridging conductive layer made of opaque conductive material in the non-working region and electrically connects the common electrode and the common electrode lead. An orthographic projection of the bridging conductive layer on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and bridging conductive layer is insulated from the peripheral circuit.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A substrate, comprising
 a base substrate, comprising a working region, and a non-working region outside of the working region, the non-working region including a peripheral circuit region near the working region and a non-circuit region away from the working region; 
 a peripheral circuit in the peripheral circuit region; 
 a common electrode lead in the non-working region; 
 a common electrode; 
 a bridging conductive layer made of opaque conductive material in the non-working region and electrically connects the common electrode and the common electrode lead; and an orthographic projection of the bridging conductive layer on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and the bridging conductive layer is insulated from the peripheral circuit. 
 
     
     
       2. The substrate according to  claim 1 , wherein the bridging conductive layer extends across the peripheral circuit, and is made of metal material. 
     
     
       3. The substrate according to  claim 1 , wherein the opaque conductive material includes aluminum. 
     
     
       4. The substrate according to  claim 1 , wherein the bridging conductive layer is arranged on a side of the common electrode lead away from the base substrate. 
     
     
       5. The substrate according to  claim 1 , wherein the bridging conductive layer is arranged on a side of the common electrode facing the base substrate. 
     
     
       6. The substrate according to  claim 1 , wherein the peripheral circuit is not provided in the non-circuit region, an orthographic projection of the common electrode lead on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and the common electrode lead is insulated from the peripheral circuit. 
     
     
       7. The substrate according to  claim 1 , further comprising an outer profile edge, wherein the common electrode lead extends along at least part of the outer profile edge, and a portion of the common electrode lead is in the non-circuit region. 
     
     
       8. The substrate according to  claim 7 , further comprising an interlayer insulating layer, wherein the interlayer insulating layer is provided between the peripheral circuit and the common electrode lead, and covers the peripheral circuit to insulate the peripheral circuit from the common electrode lead. 
     
     
       9. The substrate according to  claim 8 , wherein an end of the interlayer insulating layer near the outer profile edge of the base substrate has a flat surface, and the common electrode lead is arranged on the flat surface; the interlayer insulating layer includes a via hole exposing an external connection joint of the peripheral circuit, and the external connection lead is electrically connected to the external connection joint of the peripheral circuit through the via hole. 
     
     
       10. The substrate according to  claim 1 , wherein the common electrode extends from the working region to the non-working region. 
     
     
       11. The substrate according to  claim 1 , wherein the bridging conductive layer is insulated from the peripheral circuit and includes two sides directly contacting the common electrode lead and the common electrode, respectively. 
     
     
       12. The substrate according to  claim 1 , wherein the peripheral circuit includes
 a first thin film transistor and a second thin film transistor, wherein each of the first thin film transistor and the second thin film transistor includes a gate electrode, a source electrode and a drain electrode; 
 a capacitor including a first plate and a second plate disposed oppositely to each other, wherein the first plate and gate electrodes of the thin film transistors are arranged in the same layer; 
 a peripheral circuit signal output lead configured to output an output signal of the peripheral circuit to the working region; and 
 a connecting line, including a first portion; 
 wherein the second plate of the capacitor is electrically connected with the source electrode of the first thin film transistor through the first portion of the connecting line; and 
 the external connection joint, the second plate of the capacitor and the connecting line are provided in the same layer. 
 
     
     
       13. The substrate according to  claim 12 , wherein the connecting line further comprises a second portion and a third portion,
 wherein the drain electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor through the second portion of the connecting line; and the drain electrode of the second thin film transistor is electrically connected to the peripheral circuit signal output lead through the third portion of the connecting line. 
 
     
     
       14. The substrate according to  claim 13 , wherein the working region comprises a display element, the display element comprises:
 a pixel defining layer including a plurality of openings; 
 a light-emitting layer in the plurality of openings; 
 a first electrode covering the pixel defining layer and the light-emitting layer, and extending from the display region toward the common electrode lead; 
 a second electrode provided between the base substrate and the light-emitting layer; and 
 the first electrode is a common cathode, the common electrode lead is a common cathode wire; or the first electrode is a common anode, the common electrode lead is a common anode wire. 
 
     
     
       15. The substrate according to  claim 1 , wherein the peripheral circuit is a gate driving circuit of GOA type. 
     
     
       16. The substrate according to  claim 1 , wherein the peripheral circuit comprises an external connection portion, the external connection portion comprises an external connection lead; and the external connection lead and the common electrode lead are made of a same material and provided on a same layer. 
     
     
       17. The substrate according to  claim 16 , wherein the external connection portion further comprises an external connection joint;
 an orthographic projection of the external connection joint on the base substrate does not coincides with the orthographic projection of the common electrode lead on the base substrate; and 
 the external connection joint is on a side of the common electrode lead near the outer profile edge of the base substrate, or the external connection joint is on a side of the common electrode lead away from the outer profile edge of the base substrate. 
 
     
     
       18. An electronic device, comprising a substrate, wherein the substrate comprises:
 a base substrate, comprising a working region, and a non-working region outside of the working region and an outer profile edge, the non-working region including a peripheral circuit region near the working region and a non-circuit region away from the working region; 
 a peripheral circuit in the peripheral circuit region; and 
 a common electrode lead in the non-working region; 
 a common electrode; 
 a bridging conductive layer made of opaque conductive material in the non-working region and electrically connects the common electrode and the common electrode lead, and 
 an orthographic projection of the bridging conductive layer on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and bridging conductive layer is insulated from the peripheral circuit. 
 
     
     
       19. A method of manufacturing a substrate, comprising
 providing a base substrate, the base substrate including a working region, and a non-working region outside of the working region, the non-working region including a peripheral circuit region near the working region and a non-circuit region away from the working region; 
 forming a peripheral circuit in the peripheral circuit region of the non-working region; and 
 forming a common electrode lead in the non-working region; 
 forming a common electrode; and 
 forming a bridging conductive layer by an opaque conductive material in the non-working region to electrically connect the common electrode and the common electrode lead; 
 wherein an orthographic projection of the bridging conductive layer on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and bridging conductive layer is insulated from the peripheral circuit. 
 
     
     
       20. The method according to  claim 19 , wherein the bridging conductive layer is formed to extend across the peripheral circuit by a metal material including aluminum, and
 the bridging conductive layer is formed in the non-working region, and is insulated from the peripheral circuit and electrically connects between the common electrode lead and the common electrode.

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