Method for manufacturing liquid crystal aligning film

Abstract

A method for manufacturing a liquid crystal aligning film includes preparing a multilayer structure in which a substrate, a conductive layer, a liquid crystal alignment layer, and a passivation film are sequentially provided, etching one area of the liquid crystal alignment layer by irradiating a pulse laser to the multilayer structure, and exposing one area of the conductive layer by removing the passivation film, wherein the pulse laser is irradiated to the liquid crystal alignment layer from the passivation film. The method is compatible with a continuous process.

The invention claimed is: 
     
       1. A method for manufacturing a liquid crystal aligning film comprising:
 preparing a multilayer structure in which a substrate, a conductive layer, a liquid crystal alignment layer, and a passivation film are sequentially provided, wherein the passivation film is in direct contact with the liquid crystal alignment layer and is at least one of polyethylene terephthalate, polyethylene, polyolefin, or ethylene vinyl acetate; 
 etching one area of the liquid crystal alignment layer by irradiating a pulse laser to the multilayer structure; and 
 exposing one area of the conductive layer on the substrate by removing the passivation film with a portion of the liquid crystal alignment layer, 
 wherein the pulse laser is irradiated to the liquid crystal alignment layer from the passivation film and a maximum pulse energy of the pulse laser is 50 μJ or more per pulse and 100 μJ or less per pulse. 
 
     
     
       2. The method of  claim 1 , wherein the substrate is a polymer substrate. 
     
     
       3. The method of  claim 1 , wherein light transmittance of the passivation film at a wavelength of 343 nm is 50% or more. 
     
     
       4. The method of  claim 1 , wherein the exposing of one area of the conductive layer is performed by removing the passivation film together with a residue of the liquid crystal alignment layer etched by irradiation of the pulse laser. 
     
     
       5. The method of  claim 1 , wherein the multilayer structure further includes two or more separated spacers. 
     
     
       6. The method of  claim 5 , wherein the spacer is a column spacer or a bead spacer. 
     
     
       7. The method of  claim 1 , wherein the pulse laser is irradiated with focus on a surface of the liquid crystal alignment layer adjacent to the passivation film. 
     
     
       8. The method of  claim 1 , wherein the pulse laser is a pico second laser. 
     
     
       9. The method of  claim 1 , wherein
 a pulse energy of the pulse laser irradiating on the liquid crystal alignment layer is in a range of 5% or more to 15% or less of the maximum pulse energy. 
 
     
     
       10. The method of  claim 1 , wherein a frequency of the pulse laser is 10 kHz or more and 400 kHz or less. 
     
     
       11. The method of  claim 1 , wherein a spot interval of the pulse laser is 10 μm or more and 100 μm or less. 
     
     
       12. The method of  claim 1 , wherein an irradiation speed of the pulse laser is 0.1 m/s or more and 10 m/s or less.