Method for producing a scattered beam collimator, scattered beam collimator and x-ray device with scattered beam collimator

Abstract

A method is for producing a scattered beam collimator starting from a lower side and extending in a build-up direction as far as an upper side, and having a large number of X-ray absorbing partitions, and in which pass-through channels for unscattered X-ray radiation are embodied between the partitions. A lithographic process is used, by which the partitions of the scattered beam collimator are formed from a photoresist into which an X-ray absorbing material is mixed.

What is claimed is: 
     
       1. A method for producing a scattered beam collimator starting from a lower side of the scattered beam collimator and extending in a build-up direction to an upper side of the scattered beam collimator, the scattered beam collimator including a number of X-ray absorbing partitions with pass-through channels for unscattered X-ray radiation embodied between the X-ray absorbing partitions, the method comprising:
 forming the number of X-ray absorbing partitions of the scattered beam collimator, using a lithographic process, from a photoresist into which an X-ray absorbing material is mixed; wherein
 the X-ray absorbing material is mixed into the photoresist such that a volumetric proportion of the X-ray absorbing material is at least approximately 30%. 
 
 
     
     
       2. The method of  claim 1 , further comprising:
 exposing a layer of the photoresist in a course of the lithographic process, and 
 following the layer of the photoresist being exposed, at least one of rinsing or bathing the layer in a solvent to form the pass-through channels. 
 
     
     
       3. The method of  claim 2 , wherein a layer of the photoresist has a thickness with a value in a range of 200 μm to 800 μm. 
     
     
       4. The method of  claim 1 , wherein the photoresist has an epoxy resin as a base resin. 
     
     
       5. The method of  claim 1 , wherein the X-ray absorbing material includes a metal. 
     
     
       6. The method of  claim 1 , wherein X-ray absorbing material is mixed into the photoresist in a form of pellets. 
     
     
       7. The method of  claim 1 , wherein a substrate is used. 
     
     
       8. The method of  7 , further comprising:
 building up the scattered beam collimator or a module of the scattered beam collimator in layers on the substrate, in a build-up direction, by repeating the lithographic process. 
 
     
     
       9. The method of  claim 8 , further comprising:
 forming a stabilizing intermediate layer by performing a coating process between two lithographic processes. 
 
     
     
       10. The method of  claim 9 , wherein the forming a stabilizing intermedia layer comprises:
 forming a metallic coating as the stabilizing intermediate layer via the coating process, by sputtering. 
 
     
     
       11. The method of  claim 9 , wherein the stabilizing intermediate layer has a thickness between 10 μm and 50 μm. 
     
     
       12. The method of  claim 8 , further comprising:
 filling, with a filling material, free spaces between structures formed of the photoresist between two lithographic processes. 
 
     
     
       13. A scattered beam collimator starting from the lower side and extending in a build-up direction to the upper side, the scattered beam collimator including the number of X-ray absorbing partitions in which pass-through channels for unscattered X-ray radiation are embodied between the X-ray absorbing partitions, the scattered beam collimator produced by the method of  claim 1 . 
     
     
       14. The scattered beam collimator of  claim 13 , wherein the build-up direction extends between 5 mm and 30 mm. 
     
     
       15. An X-ray device, comprising:
 an X-ray radiation source; 
 an X-ray detector; and 
 the scattered beam collimator of  claim 13 , arranged between the X-ray radiation source and the X-ray detector. 
 
     
     
       16. The X-ray device of  claim 15 , wherein the X-ray device is embodied as a computed tomography apparatus. 
     
     
       17. The method of  claim 2 , further comprising:
 at least one of rinsing or bathing the layer in a gamma-butyrolactone solvent, to form the pass-through channels. 
 
     
     
       18. The method of  claim 3 , wherein a layer of the photoresist has a thickness in a range of 400 μm to 600 μm. 
     
     
       19. The method of  claim 5 , wherein the metal is tungsten.