Ceramic structure for plasma processing apparatus and manufacturing method thereof

Abstract

A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.

What is claimed is: 
     
       1. A manufacturing method of a ceramic structure comprising:
 (a) forming a ceramic sheet shape of a first layer; 
 (b) forming a first conductive structure on the ceramic sheet shape of the first layer; 
 (c) forming a ceramic sheet shape of a second layer on the first conductive structure; 
 (d) embedding an electrically conductive connection member capable of compensating for a vertical shrinkage rate of the ceramic sheet shape in the ceramic sheet shape of the second layer; 
 (e) forming a second conductive structure on the ceramic sheet shape of the second layer; 
 (f) forming a ceramic sheet shape of a third layer on the second conductive structure; and 
 (g) sintering a ceramic sheet-shaped laminate manufactured in step (f), 
 wherein the ceramic structure includes a structure in which the first conductive structure and the second conductive structure are electrically connected to each other by the electrically conductive connection member capable of compensating for the vertical shrinkage rate of the ceramic sheet shape. 
 
     
     
       2. The manufacturing method of the ceramic structure of  claim 1 , wherein the first conductive structure and the second conductive structure are RF electrodes or heater electrodes. 
     
     
       3. The manufacturing method of the ceramic structure of  claim 1 , wherein the electrically conductive connection member capable of compensating for the vertical shrinkage rate of the ceramic sheet shape is a connection member having vertical elasticity. 
     
     
       4. The manufacturing method of the ceramic structure of  claim 3 , wherein the connection member having vertical elasticity includes at least one selected from the group consisting of an elastic wire and a spring. 
     
     
       5. The manufacturing method of the ceramic structure of  claim 1 , wherein the electrically conductive connection member capable of compensating for the vertical shrinkage rate of the ceramic sheet shape is a connection member including a cap and an insertion member fitted to the cap. 
     
     
       6. The manufacturing method of the ceramic structure of  claim 5 , wherein the cap has an insertion groove of the insertion member which is deeper than a vertical shrinkage length of the ceramic sheet shape. 
     
     
       7. The manufacturing method of the ceramic structure of  claim 1 , wherein ceramic materials constituting the ceramic sheets of the first layer to the third layer are at least one selected from the group consisting of aluminum nitride, SIC, SIN, Al 2 O 3 , and AlON. 
     
     
       8. The manufacturing method of the ceramic structure of  claim 1 , wherein the ceramic sheet shape of the first layer to the third layer is formed of ceramic powder or ceramic powder slurry or formed of a sheet prepared in a sheet shape in advance. 
     
     
       9. The manufacturing method of the ceramic structure of  claim 1 , wherein the first conductive structure and the second conductive structure are formed by using a structure having a predetermined shape or formed by printing a conductive structure on the ceramic sheet shape. 
     
     
       10. The manufacturing method of the ceramic structure of  claim 1 , wherein in step (c), the electrically conductive connection member capable of compensating for the vertical shrinkage rate of the ceramic sheet shape is installed by a method of implanting on the ceramic sheet of the second layer. 
     
     
       11. The manufacturing method of the ceramic structure of  claim 1 , wherein in steps (a) to (f), the lamination of the ceramic sheet is performed in the mold and in step (f), the sintering is performed by a method of applying pressure in a vertical direction. 
     
     
       12. A ceramic structure comprising:
 a first conductive structure embedded therein; and 
 a second conductive structure embedded at a different depth from the first conductive structure, 
 wherein the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member compensating for a vertical shrinkage rate of the ceramic sheet shape while being embedded therein when sintering the ceramic structure. 
 
     
     
       13. The ceramic structure of  claim 12 , wherein the first conductive structure and the second conductive structure are RF electrodes or heater electrodes. 
     
     
       14. The ceramic structure of  claim 12 , wherein the electrically conductive connection member compensating for the vertical shrinkage rate of the ceramic sheet shape is a connection member having vertical elasticity. 
     
     
       15. The ceramic structure of  claim 14 , wherein the connection member having vertical elasticity includes at least one selected from the group consisting of an elastic wire and a spring. 
     
     
       16. The ceramic structure of  claim 12 , wherein the electrically conductive connection member compensating for the vertical shrinkage rate of the ceramic sheet shape is a connection member including a cap and an insertion member fitted to the cap. 
     
     
       17. The ceramic structure of  claim 16 , wherein the cap has an insertion groove of the insertion member which is deeper than a vertical shrinkage length of the ceramic sheet shape. 
     
     
       18. The ceramic structure of  claim 12 , wherein the electrically conductive connection member compensating for the vertical shrinkage rate of the ceramic sheet shape further includes a connection terminal at an end for an increase in contact area with the conductive structure and a stable contact. 
     
     
       19. The ceramic structure of  claim 12 , wherein the ceramic structure is a seamless monolithic ceramic structure. 
     
     
       20. A plasma processing apparatus comprising the ceramic structure of  claim 12  as a supporter of a processing substrate.