Method of manufacturing LED chip package structure

Abstract

An LED chip package structure and a method of manufacturing the same are provided. The method of manufacturing the LED chip package structure includes providing a phosphor film including a phosphor layer and an outer enclosing layer for enclosing the phosphor layer that includes a plurality of phosphor particles; removing the outer enclosing layer from the phosphor layer for exposing the phosphor layer; and then covering an LED chip with the phosphor layer. The LED chip package structure includes an LED chip and a phosphor layer for covering the LED chip. The phosphor layer includes a plurality of phosphor particles tightly connected with each other, and the phosphor layer has no non-phosphor material. Therefore, the LED chip can be directly covered by the phosphor layer without the outer enclosing layer, and the phosphor particle without the non-phosphor material can directly contact the LED chip.

What is claimed is: 
     
       1. A method of manufacturing a light-emitting diode (LED) chip package structure, comprising:
 providing a phosphor film including a phosphor layer and an outer enclosing layer for enclosing the phosphor layer, wherein the phosphor layer includes a plurality of phosphor particles tightly connected with each other; 
 placing the phosphor film on a surface of a liquid in a liquid tank; 
 using a solvent to dissolve the outer enclosing layer so as to remove the outer enclosing layer from the phosphor layer and expose the phosphor layer; and 
 performing a step (A) or a step (B); 
 wherein the step (A) includes gradually leaking the liquid away from the liquid tank so as to make the phosphor layer gradually approach an LED chip that has been disposed on a bottom surface inside the liquid tank in advance until a top surface and a peripheral surface of the LED chip are covered by the phosphor layer; 
 wherein the step (B) includes gradually raising an LED chip that has been disposed inside the liquid tank in advance by a lifting device so as to make the LED chip gradually approach the phosphor layer until a top surface and a peripheral surface of the LED chip are covered by the phosphor layer. 
 
     
     
       2. The method according to  claim 1 , wherein after the light-emitting diode (LED) chip is covered by the phosphor layer, the method further comprises:
 forming a phosphor protecting material on the phosphor layer, wherein a top surface and a peripheral surface of the phosphor layer are covered by the phosphor protecting material; and 
 curing the phosphor protecting material by irradiation or heating to form a phosphor protection layer for covering the top surface and the peripheral surface of the phosphor layer. 
 
     
     
       3. A method of manufacturing a light-emitting diode (LED) chip package structure, comprising:
 providing a phosphor film including a phosphor layer and an outer enclosing layer for enclosing the phosphor layer, wherein the phosphor layer includes a plurality of phosphor particles; 
 removing the outer enclosing layer from the phosphor layer so as to expose the phosphor layer; and 
 covering a light-emitting diode (LED) chip by the phosphor layer, 
 wherein a step of removing the outer enclosing layer from the phosphor layer further comprises:
 placing the phosphor film on a first position, wherein the first position is located on a surface of a first liquid in a first liquid tank; and 
 using a solvent to dissolve the outer enclosing layer so as to completely remove the outer enclosing layer from the phosphor layer. 
 
 
     
     
       4. The method according to  claim 3 , wherein a step of covering the LED chip by the phosphor layer further comprises:
 placing the phosphor layer on a second position, wherein the second position is located on a surface of a second liquid in a second liquid tank; and 
 performing a step (A) or a step (B); 
 wherein the step (A) includes gradually leaking the second liquid away from the second liquid tank so as to make the phosphor layer gradually approach the LED chip that has been disposed on a bottom surface inside the second liquid tank in advance until a top surface and a peripheral surface of the LED chip are covered by the phosphor layer; 
 wherein the step (B) includes gradually raising the LED chip that has been disposed inside the second liquid tank in advance by a lifting device so as to make the LED chip gradually approach the phosphor layer until a top surface and a peripheral surface of the LED chip are covered by the phosphor layer. 
 
     
     
       5. The method according to  claim 3 , wherein the step of covering the light-emitting diode (LED) chip by the phosphor layer further comprises: performing a step (A) or a step (B);
 wherein the step (A) includes gradually leaking the first liquid away from the first liquid tank so as to make the phosphor layer gradually approach the LED chip that has been disposed on a bottom surface inside the first liquid tank in advance until a top surface and a peripheral surface of the LED chip are covered by the phosphor layer; 
 wherein the step (B) includes gradually raising the LED chip that has been disposed inside the first liquid tank in advance by a lifting device until a top surface and a peripheral surface of the LED chip are covered by the phosphor layer. 
 
     
     
       6. The method according to  claim 3 , wherein after a step of covering the light-emitting diode (LED) chip by the phosphor layer, the method further comprises:
 forming a phosphor protecting material on the phosphor layer, wherein a top surface and a peripheral surface of the phosphor layer are covered by the phosphor protecting material; and 
 curing the phosphor protecting material by irradiation or heating to form a phosphor protection layer for covering the top surface and the peripheral surface of the phosphor layer.