US11499070B2ActiveUtilityA1

Modified colloidal silica and method for producing the same, and polishing agent using the same

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Assignee: FUJIMI INCPriority: Jan 19, 2015Filed: Jan 19, 2016Granted: Nov 15, 2022
Est. expiryJan 19, 2035(~8.5 yrs left)· nominal 20-yr term from priority
H10P 95/062H10P 52/00H10W 20/092B24B 37/044C01P 2004/03B24B 37/00C01B 33/148C09K 3/1409C01B 33/146C01B 33/149C01P 2004/51C09K 3/14C01P 2004/61C09G 1/02C09K 3/1436C07F 7/025H01L 21/304H01L 21/76819H01L 21/31053
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Claims

Abstract

To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica. Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. Modified colloidal silica comprising a residual oxidizing agent, being obtained by anion-modifying unmodified colloidal silica, wherein
 the unmodified colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope, and 
 wherein a residual oxidizing agent concentration in the modified colloidal silica is 1000 ppm by mass or less. 
 
     
     
       2. The modified colloidal silica according to  claim 1 , wherein the modified colloidal silica is modified with a sulfonic acid group. 
     
     
       3. Modified colloidal silica being anionically modified, comprising a residual oxidizing agent, wherein when a SiN wafer is subjected to an immersion treatment under a pH 2 condition and then washed with pure water, the number of particles having a particle size of less than 40% of a volume average particle size adhering to a surface of the SiN wafer is 50% or less relative to the number of particles having a particle size of 40% or more of a volume average particle size adhering similarly, and wherein a residual oxidizing agent concentration in the modified colloidal silica is 1000 ppm by mass or less. 
     
     
       4. The modified colloidal silica according to  claim 3 , wherein the total content of metal impurities is 1 ppm by mass or less. 
     
     
       5. A polishing agent, comprising the modified colloidal silica set forth in  claim 1 . 
     
     
       6. A polishing agent, comprising the modified colloidal silica set forth in  claim 2 . 
     
     
       7. A polishing agent, comprising the modified colloidal silica set forth in  claim 3 . 
     
     
       8. A polishing agent, comprising the modified colloidal silica set forth in  claim 4 .

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