Spin element and reservoir element including high resistance layer

Abstract

A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.

What is claimed is: 
     
       1. A spin element comprising:
 a wiring that extends in a plane and has a length in a first direction that is longer than a width of the wiring in a second direction that is perpendicular to the first direction; 
 a laminated body including a first ferromagnetic layer laminated on the wiring; 
 a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction; and 
 a first high resistance layer which is in physical contact with the wiring and the first conductive part and is disposed between the first conductive part and the wiring, the first high resistance layer having an electrical resistivity equal to or higher than that of the wiring, 
 wherein: 
 the first conductive part and the second conductive part have lower electrical resistivity than the wiring, and 
 a perimeter of the first high resistance layer is smaller than a perimeter of the first conductive part. 
 
     
     
       2. The spin element according to  claim 1 , wherein:
 the first high resistance layer is included in the first conductive part in a plan view in the laminating direction. 
 
     
     
       3. The spin element according to  claim 1 , wherein:
 a center of the first high resistance layer is closer to the first ferromagnetic layer than a center of the first conductive part in a plan view in the laminating direction. 
 
     
     
       4. The spin element according to  claim 1 , wherein materials which constitute the first high resistance layer and the wiring are the same. 
     
     
       5. The spin element according to  claim 1 , wherein an interface between the first high resistance layer and the wiring has unevenness of one atomic layer or more. 
     
     
       6. The spin element according to  claim 1 , wherein a thickness of the first high resistance layer at a first point is thicker than a thickness thereof at a second point farther from the first ferromagnetic layer than the first point. 
     
     
       7. The spin element according to  claim 1 , further comprising a second high resistance layer which is in contact with the wiring and is disposed between the second conductive part and the wiring, the second high resistance layer having an electrical resistivity equal to or higher than that of the wiring. 
     
     
       8. The spin element according to  claim 1 , wherein:
 the laminated body is formed of the first ferromagnetic layer, and 
 the wiring is any one of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide which have a function of generating a spin current by a spin Hall effect when a current flows. 
 
     
     
       9. A reservoir element comprising:
 a plurality of spin elements according to  claim 8 ; and 
 a spin conductive layer which connects the first ferromagnetic layers of the plurality of spin elements. 
 
     
     
       10. The spin element according to  claim 1 , wherein:
 the laminated body includes the first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer from a side close to the wiring, and 
 the wiring is any one of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide which have a function of generating a spin current by a spin Hall effect when a current flows. 
 
     
     
       11. The spin element according to  claim 1 , wherein:
 the laminated body includes a nonmagnetic layer, and the first ferromagnetic layer from a side close to the wiring, and 
 the wiring is a ferromagnetic layer which is able to have a magnetic domain wall therein.