Film bulk acoustic resonator and method of manufacturing the same

Abstract

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

What is claimed is: 
     
       1. A film bulk acoustic resonator, comprising:
 a first electrode disposed on a substrate; 
 a piezoelectric body disposed on the first electrode and comprising AIN to which a dopant is added; and 
 a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, 
 wherein the dopant comprises either one of 0.1 to 24 atomic % of TA (tantalum) and 0.1 to 23 atomic % of Nb (niobium). 
 
     
     
       2. The film bulk acoustic resonator of  claim 1 , wherein a weight percent content of either one of Ta (tantalum), and Nb (niobium) in the piezoelectric body is less than a weight percent content of Al in the piezoelectric body. 
     
     
       3. The film bulk acoustic resonator of  claim 1 , wherein
 in a case in which the dopant comprises Ta (tantalum), the piezoelectric body comprises AIN and AITaN (aluminum tantalum nitride), or 
 in a case in which the dopant comprises Nb (niobium), the piezoelectric body comprises AIN and AINbN (aluminum tantalum nitride). 
 
     
     
       4. The film bulk acoustic resonator of  claim 1 , wherein the piezoelectric body does not include either one of TaN (tantalum nitride) and NbN (niobium nitride). 
     
     
       5. The film bulk acoustic resonator of  claim 1 , wherein either one of the first electrode and the second electrode comprises a conductive metal and an added element, and wherein the added element comprises either one of Ta (tantalum) and Nb (niobium. 
     
     
       6. The film bulk acoustic resonator of  claim 5 , wherein the added element is the same as the dopant. 
     
     
       7. The film bulk acoustic resonator of  claim 1 , wherein either one of the first electrode and the second electrode comprises a conductive metal and an added element, and wherein the added element comprises either one of Ta (tantalum) and (niobium) in an amount of 0.1 to 30 atomic %.