Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers

Abstract

A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

The invention claimed is: 
     
       1. A quantum device, comprising:
 a substrate comprising a first material and including an upper surface thereof; 
 a first layer comprising a compound of the first material disposed on the upper surface of the substrate; 
 a second layer, comprising a metal oxide, disposed on the first layer; 
 a third layer, comprising a noble metal, disposed on the second layer; 
 a fourth layer, comprising a metal oxide, disposed on the third layer; 
 a fifth layer, comprising a piezoelectric material, disposed on the fourth layer; 
 a sixth layer, comprising a noble metal, disposed on the fifth layer; 
 a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer; and 
 an eighth layer, comprising a noble metal, disposed on the seventh layer; wherein 
 at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer. 
 
     
     
       2. The quantum device of  claim 1 , wherein the noble metal is selected from platinum, gold, silver and ruthenium. 
     
     
       3. The quantum device of  claim 1 , wherein the second layer is thicker than the fourth layer. 
     
     
       4. The quantum device of  claim 1 , wherein the metal oxide comprises titanium oxide. 
     
     
       5. The quantum device of  claim 4 , wherein the fourth layer is a seed layer for the fifth layer. 
     
     
       6. The quantum device of  claim 5 , wherein the eighth layer is sized to enable quantum emission from the seventh layer. 
     
     
       7. The quantum device of  claim 5 , wherein the seventh layer is sized to enable quantum emission therefrom. 
     
     
       8. A method of forming a quantum device, comprising:
 providing a substrate comprising a first material and including an upper surface thereof; 
 providing a first layer comprising a compound of the first material disposed on the upper surface of the substrate; 
 forming a second layer, comprising a metal oxide, disposed on the first layer; 
 forming a third layer, comprising a noble metal, disposed on the second layer; 
 forming a fourth layer, comprising a metal oxide, disposed on the third layer; 
 forming a fifth layer, comprising a piezoelectric material, disposed on the fourth layer; 
 forming a sixth layer, comprising a noble metal, disposed on the fifth layer; 
 forming a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer; and 
 forming an eighth layer, comprising a noble metal, disposed on the seventh layer; wherein 
 at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer. 
 
     
     
       9. The method of  claim 8 , further comprising, providing a vacuum transfer chamber having a plurality of vacuum processing chambers accessible therefrom by transferring a substrate from the transfer chamber to one or more of the vacuum processing chambers while maintaining the substrate in a vacuum environment, and forming the second through seventh layers on the substrate in one or more of the vacuum processing chambers. 
     
     
       10. The method of  claim 9 , further comprising forming the second through eighth layers on the substrate in one or more of the vacuum processing chambers. 
     
     
       11. The method of quantum device of  claim 9 , wherein the noble metal is selected from platinum, gold, silver and ruthenium. 
     
     
       12. The method of quantum device of  claim 9 , wherein the second layer is thicker than the fourth layer. 
     
     
       13. The method of quantum device of  claim 9 , wherein the metal oxide comprises titanium oxide. 
     
     
       14. The method of quantum device of  claim 13 , wherein the fourth layer is a seed layer for the fifth layer. 
     
     
       15. The method of quantum device of  claim 14 , wherein the eighth layer is sized to enable quantum emission from the seventh layer. 
     
     
       16. The method of quantum device of  claim 14 , wherein the seventh layer is sized to enable quantum emission therefrom. 
     
     
       17. A quantum device, comprising:
 a substrate comprising a first material and including an upper surface thereof; 
 a first layer comprising a compound of the first material disposed on the upper surface of the substrate; 
 a second layer, comprising a metal oxide, disposed on the first layer; 
 a third layer, comprising a noble metal, disposed on the second layer; 
 a fourth layer, comprising a metal oxide, disposed on the third layer; 
 a fifth layer, comprising a piezoelectric material, disposed on the fourth layer; 
 a sixth layer, comprising a noble metal, disposed on the fifth layer; 
 a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer. the seventh layer; and 
 an eighth layer, comprising a noble metal, disposed on the seventh layer, the eighth layer comprising a plurality of discrete noble metal islands; wherein 
 at least one of the noble metal island of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer. 
 
     
     
       18. The quantum device of  claim 17 , wherein the seventh layer comprises a plurality of island of quantum emission material, each island sized to enable quantum emission therefrom. 
     
     
       19. The quantum device of  claim 17 , further comprising a ninth layer comprising a dielectric disposed over the sixth layer and the seventh laver, and conductive lead extending from the noble metal island and over the night layer. 
     
     
       20. The quantum device of  claim 19 , wherein the ninth layer is a dielectric layer.