Luminophore mixture, conversion element and optoelectronic component

Abstract

The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

The invention claimed is: 
     
       1. A phosphor mixture, comprising:
 at least one quantum dot phosphor; 
 at least one functional material; and 
 at least on further phosphor; 
 wherein the functional material comprises scattering particles configured to scatter electromagnetic radiation, the scattering particles having a diameter selected from a range of 0.5 μm to 5 μm, wherein the scattering particles include garnets, and/or wherein the functional material comprises second particles having a density of not less than 2 g/cm 3 , and having a second diameter of not less than 5 μm, wherein the second particles include garnets; and 
 wherein the at least one quantum dot phosphor and the functional material are in a form of a mixture of particles embedded in a matrix; and 
 wherein the further phosphor comprises a material selected from the group consisting of N(N a M 1-a )SX 2 AX 2 NX 6 :D where N is at least one divalent metallic element, M is a divalent metallic element other than N, D comprises one, two or more elements from the group of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, SX comprises at least one tetravalent element, AX comprises at least one trivalent element, NX comprises at least one element selected from the group of N, O, F, Cl, the parameter a is between 0.6 and 1.0 inclusive, 
 Sr x Ca 1-x AlSiN 3 :Eu where between 0.1% and 5% inclusive of the Sr—Ca lattice sites and/or of the Sr lattice sites and/or of the Ca lattice sites are replaced by Eu, 
 (M) 2-2x Eu 2x Si 5 N 8  with M=Sr, Ca and/or Ba and 0.001≤x≤0.2, 
 beta-SiAlON Si 6-x Al z O y N 8-y :RE where 0<x≤4, 0<y≤4, 0<z<1 and RE contains one or more elements selected from rare earth metals, 
 Y 3 (Al 1-x Ga x ) 5 O 12 :Ce where the proportion of Ga is 0.2<x≤0.6, 
 (Gd,Y) 3 (Al 1-x Ga x ) 5 O 12 :Ce having a cerium content of 1.5-5 mol and a gallium content x between 0 to 0.5, (Tb,Y) 3 (Al 1-x Ga x ) 5 O 12 :Ce having a cerium content of 1.5-5 mol and a gallium content x between 0 to 0.5, 
 Lu 3 (Al 1-x Ga x ) 5 O 12 :Ce having a cerium content of 0.5-5 mol % and a gallium content x between 0 to 0.5, (Lu,Y) 3 (Al 1-x Ga x ) 5 O 12 :Ce having a cerium content of 0.5-5 mol % and a gallium content x between 0 to 0.5, and mixtures thereof. 
 
     
     
       2. The phosphor mixture as claimed in  claim 1 , wherein the scattering particles have a proportion in the phosphor mixture selected from a range of 1% to 5% by weight. 
     
     
       3. The phosphor mixture as claimed in  claim 1 , wherein the second particles have a proportion in the phosphor mixture of not more than 50% by weight. 
     
     
       4. The phosphor mixture as claimed in  claim 1 ,
 wherein the scattering particles are configured to convert electromagnetic radiation of a first wavelength range at least partly to electromagnetic radiation of a second wavelength range. 
 
     
     
       5. The phosphor mixture as claimed in  claim 4 ,
 wherein the electromagnetic radiation of the second wavelength range are selected from a red spectral region and/or from a green spectral region. 
 
     
     
       6. The phosphor mixture as claimed in  claim 1 , wherein the at least one quantum dot phosphor is selected from a group consisting of CdSe, CdS, CdTe, InP, InAs, Cl(Z)S, AlS, Zn 3 N 2 , Si, ZnSe, ZnO and GaN. 
     
     
       7. The phosphor mixture as claimed in  claim 1 , wherein the at least one further phosphor is present in the phosphor mixture with a proportion of 20% to 30% by weight. 
     
     
       8. The phosphor mixture as claimed in  claim 1 , wherein the at least one quantum dot phosphor and the functional material arranged as particles in the matrix in two different, adjoining regions. 
     
     
       9. The phosphor mixture as claimed in  claim 8 ,
 wherein a region of the adjoining regions comprising the quantum dot phosphor is free of further phosphors. 
 
     
     
       10. A conversion element including the phosphor mixture as claimed in  claim 1 . 
     
     
       11. An optoelectronic component, comprising:
 at least one radiation-emitting semiconductor chip that emits electromagnetic radiation of a first wavelength range, and 
 the phosphor mixture as claimed in  claim 1 . 
 
     
     
       12. The optoelectronic component as claimed in  claim 11 , wherein the phosphor mixture is present in a conversion element disposed on the semiconductor chip. 
     
     
       13. The optoelectronic component as claimed in  claim 11 , wherein the phosphor mixture is in an encapsulating arrangement on the semiconductor chip. 
     
     
       14. An optoelectronic component, comprising:
 at least one radiation-emitting semiconductor chip that emits electromagnetic radiation of a first wavelength range, and 
 a phosphor mixture comprising at least one quantum dot phosphor, at least one functional material and 
 at least one further phosphor different from the quantum dot phosphor; 
 wherein the functional material comprises scattering particles configured to scatter electromagnetic radiation, the scattering particles having a diameter selected from a range of 0.5 μm to 5 μm, wherein the scattering particles include garnets, and/or wherein the functional material comprises second particles having a density of not less than 2 g/cm3, and having a second diameter of not less than 5 μm, wherein the second particles include garnets; 
 wherein the at least one quantum dot phosphor and the functional material are in a form of a mixture of particles embedded in a matrix; 
 wherein the quantum dot phosphor and the further phosphor are arranged in a first layer; 
 wherein the functional material is arranged in a second layer such that the quantum dot phosphor and the functional material are spatially separated; and 
 wherein the second layer forms a radiation exit surface of the optoelectronic component. 
 
     
     
       15. An optoelectronic component, comprising:
 at least one radiation-emitting semiconductor chip that emits electromagnetic radiation of a first wavelength range, and 
 a phosphor mixture comprising at least one quantum dot phosphor, at least one functional material and 
 at least one further phosphor different from the quantum dot phosphor; 
 wherein the functional material comprises scattering particles configured to scatter electromagnetic radiation, the scattering particles having a diameter selected from a range of 0.5 μm to 5 μm, wherein the scattering particles include garnets, and/or wherein the functional material comprises second particles having a density of not less than 2 g/cm3, and having a second diameter of not less than 5 μm, wherein the second particles include garnets; 
 wherein the at least one quantum dot phosphor and the functional material are in a form of a mixture of particles embedded in a matrix; 
 wherein the further phosphor is arranged in a first layer; 
 wherein the quantum dot phosphor and the functional material are arranged in a second layer; 
 wherein the first layer and the second layer are spatially separated; 
 wherein the second layer forms a radiation exit surface of the optoelectronic component; and 
 wherein the first layer is arranged between the radiation-emitting semiconductor chip and the second layer.