Semiconductor device with multiple metal-insulator-metal capacitors and method for manufacturing the same

Abstract

A semiconductor device includes a plurality of capacitors with MIM structure disposed in an interconnection layer on a substrate. Each capacitor includes a first electrode and a second electrode provided by any two interconnection parts of the interconnection layer, in which the first electrode is one of the two interconnection parts located adjacent to the substrate and the second electrode is the other located opposite to the substrate with respect to the first electrode. One of the first and second electrode of each capacitor is provided by the same interconnection part as a subject electrode, and a distance between the first electrode and the second electrode is different among the plurality of capacitors to have different capacitances. The subject electrodes provided by the same interconnection part are covered with an insulating film of the interconnection layer, and have ends on a same plane.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a substrate having one surface; and 
 an interconnection layer disposed on the one surface of the substrate, the interconnection layer including a plurality of capacitors each having a metal-insulator-metal structure, wherein 
 the interconnection layer has a plurality of insulating films and a plurality of interconnection parts alternately stacked in a stacked direction, 
 each of the capacitors includes a first electrode and a second electrode provided by any two of the plurality of interconnection parts opposed to each other in the stacked direction, in which the first electrode is one of the two interconnection parts located adjacent to the substrate and the second electrode is the other located opposite to the substrate with respect to the first electrode, 
 among the plurality of capacitors, one of the first electrode and the second electrode of each capacitor is provided by a same one of the interconnection parts as a subject electrode, and a distance between the first electrode and the second electrode is different among the plurality of capacitors to have different capacitances among the plurality of capacitors, and 
 the subject electrodes provided by the same one of the interconnection parts are covered with at least one of the insulating films, and have ends located on a same plane, 
 wherein 
 the plurality of insulating films include first to fourth insulating films, and the plurality of interconnection parts include first to fourth interconnection parts, 
 the first insulating film is disposed on the one surface of the substrate, 
 the first interconnection part is disposed on the first insulating film, 
 the second insulating film is disposed on the first insulating film to cover the first interconnection part, 
 the second interconnection part is disposed on the second insulating film, 
 the third insulating film is disposed on the second insulating film to cover the second interconnection part, 
 the third interconnection part is disposed on the third insulating film, and 
 the fourth insulating film is disposed on the third insulating film to cover the third interconnection part, 
 the plurality of capacitors include a first capacitor including portions of the second interconnection part and the third interconnection part opposed to each other, a second capacitor including portions of the first interconnection part and the third interconnection part opposed to each other, a third capacitor including portions of the second interconnection part and the third interconnection part opposed to each other, and a fourth capacitor, 
 the third insulating film is formed with a hole in a region corresponding to the portion of the second interconnection part, the portion forming the first electrode of the first capacitor, 
 the portion of the third interconnection part forming the second electrode as the subject electrode of the first capacitor is disposed on the first electrode of the first capacitor through a capacitance film in the hole, and is extended outside the hole such that an end thereof is disposed on a periphery of the hole and on the same plane as the end of the second electrode as the subject electrode of each of the second and third capacitors in the third interconnection part, 
 the fourth interconnection part is disposed on the fourth insulating film, as an upper-layer interconnection part, and includes an upper electrode portion, a first portion, a second portion, a third portion, a fourth portion, a fifth portion, and a sixth portion,
 the upper electrode portion being the second electrode of the fourth capacitor that faces the portion of the third interconnection part forming the second electrode of the third capacitor across the fourth insulating, such that the second electrode of the third capacitor and the first electrode of the fourth capacitor are provided by the same portion of the third interconnection part as the subject electrodes, 
 the first portion facing the second electrode of the first capacitor, which is provided by the third interconnection part and received in the hole, across the fourth insulating film, 
 
 in the hole, the fourth insulating film is disposed on the second electrode of the first capacitor to fill the hole, and a distance between the second electrode of the first capacitor disposed in the hole and the first portion of the fourth interconnection part corresponding to a position of the hole is larger than a distance between the first electrode of the fourth capacitor and the second electrode of the fourth capacitor provided by the upper electrode portion of the fourth interconnection part, 
 a first connection via is disposed to pass through the fourth insulating film between the second electrode of the first capacitor and the first portion of the fourth interconnection part, 
 the upper electrode portion of the fourth interconnection part has a flat first upper surface and a flat first lower surface, 
 the upper electrode portion of the fourth interconnection part has a flat second upper surface and a flat second lower surface, 
 the second portion of the fourth interconnection part is recessed to reach the subject electrode of the second capacitor through the fourth insulating film and forms a second connection via, 
 the third portion of the fourth interconnection part is recessed to reach the subject electrode of the third capacitor through the fourth insulating film and forms a third connection via, 
 the portion of the second interconnection part forming the first electrode of the first capacitor is extended to a position outside a first capacitor formation region overlapping the subject electrode of the first capacitor, and is connected to the fourth portion of the fourth interconnection part through a fourth connection via passing through the third and fourth insulating films outside the first capacitor formation region, 
 the portion of the first interconnection part forming the first electrode of the second capacitor is extended to a position outside a second capacitor formation region overlapping the subject electrode of the second capacitor, and is connected to the fifth portion of the fourth interconnection part through a fifth connection via passing through the second to fourth insulating films outside the second capacitor formation region, and 
 the portion of the second interconnection part forming the first electrode of the third capacitor is extended to a position outside a third capacitor formation region overlapping the subject electrode of the third and fourth capacitors, and is connected to the sixth portion of the fourth interconnection part through a sixth connection via passing through the third and fourth insulating films outside the third capacitor formation region. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein
 the interconnection layer includes a first resistor and a second resistor connected in series to the first resistor, 
 one of the first resistor and the second resistor has a temperature coefficient of resistance with a positive value while the other of the first and second resistors has a temperature coefficient of resistance with a negative value, and 
 the second resistor has an end located on the same plane as the ends of the subject electrodes provided by the same interconnection part, and is made of a same material as the subject electrodes. 
 
     
     
       3. The semiconductor device according to  claim 1 , wherein
 the portion of the third interconnection part forming the second electrode of the first capacitor is disposed on the first electrode of the first capacitor only through the capacitance film in the hole, and 
 in each of the second capacitor and the third capacitor, the second electrode faces the first electrode through the capacitance film and at least one insulating film. 
 
     
     
       4. The semiconductor device according to  claim 3 , wherein
 the interconnection layer further includes a protection film on the third insulating film except inside of the hole 
 the capacitance film is disposed on the protection film, and 
 in the hole, the second electrode of the first capacitor is disposed on the first electrode only through the capacitance film. 
 
     
     
       5. The semiconductor device according to  claim 1 , wherein
 the subject electrodes of the second to fourth capacitors are planar and disposed on the same plane, and 
 the end of the subject electrode of the first capacitor is disposed on the same plane on which the subject electrodes of the second to fourth capacitors are disposed, and a part of the subject electrode other than the end is disposed in the hole recessed from the plane on which the subject electrodes of the second to fourth capacitors are disposed. 
 
     
     
       6. The semiconductor device according to  claim 2 , wherein
 the fourth interconnection layer includes portions facing the first resistor and the second resistor. 
 
     
     
       7. The semiconductor device according to  claim 3 , wherein
 the distance between the first electrode and the second electrode of the fourth capacitor is different from those of the first capacitor and the second capacitor, and a facing area between the first electrode and the second electrode of the fourth capacitor is different from a facing area of the first electrode and the second electrode of the third capacitor. 
 
     
     
       8. The semiconductor device according to  claim 1 , wherein
 the upper electrode portion of the fourth interconnection part has a uniform thickness, and 
 the first portion of the fourth interconnection part has the uniform thickness. 
 
     
     
       9. The semiconductor device according to  claim 1 , wherein
 the fourth portion, the fifth portion and the sixth portion of the fourth interconnection part are extended opposite to the first capacitor formation region, the second capacitor formation region, and the third capacitor formation region with respect to the fourth connection via, the fifth connection via and the sixth connection via, respectively.