Combination structures and optical filters and image sensors and camera modules and electronic devices

Abstract

Disclosed are a combination structure including a nanostructure array including a plurality of nanostructures with a smaller dimension than the near-infrared wavelength are repeatedly arranged and a light absorption portion adjacent to the nanostructure array and including a near-infrared absorbing material configured to absorb light in at least a portion of near-infrared wavelength regions, an optical filter, an image sensor, a camera module, and an electronic device including the same.

What is claimed is: 
     
       1. A combination structure, comprising
 a nanostructure array including a plurality of nanostructures, each of the plurality of nanostructures having a width smaller than a near-infrared wavelength and are repeatedly arranged, and 
 a light absorption portion adjacent to the nanostructure array, the light absorption portion including a near-infrared absorbing material configured to selectively absorb light in at least a portion of a near-infrared wavelength region. 
 
     
     
       2. The combination structure of  claim 1 , wherein the light absorption portion is on at least one of a lower, an upper, and a side of the plurality of nanostructures. 
     
     
       3. The combination structure of  claim 1 , wherein the plurality of nanostructures and the light absorption portion are in contact with each other. 
     
     
       4. The combination structure of  claim 1 , wherein the near-infrared wavelength is in a range of greater than about 700 nm and less than or equal to about 1200 nm. 
     
     
       5. The combination structure of  claim 4 , wherein the near-infrared wavelength is in a range of about 890 nm to about 990 nm. 
     
     
       6. The combination structure of  claim 1 , wherein
 a width of the nanostructure is about 100 nm to about 500 nm, and 
 a thickness of the nanostructure is about 50 nm to about 500 nm. 
 
     
     
       7. The combination structure of  claim 1 , wherein each of the nanostructures of the plurality of nanostructures includes a high refractive material having a refractive index of greater than or equal to about 2.4 at 940 nm. 
     
     
       8. The combination structure of  claim 7 , wherein each of the nanostructures of the plurality of nanostructures includes a titanium oxide, silicon, aluminum, a III-V semiconductor compound, or a combination thereof. 
     
     
       9. The combination structure of  claim 1 , wherein the near-infrared absorbing material is configured to absorb light in at least a portion of a wavelength region of greater than about 700 nm and less than or equal to 1200 nm. 
     
     
       10. The combination structure of  claim 9 , wherein a maximum absorption wavelength of the near-infrared absorbing material is in a range of about 890 nm to about 990 nm. 
     
     
       11. The combination structure of  claim 1 , wherein a refractive index of the light absorption portion is lower than a refractive index of the nanostructure. 
     
     
       12. The combination structure of  claim 11 , wherein a refractive index of the light absorption portion at 940 nm is less than or equal to about 1.8. 
     
     
       13. The combination structure of  claim 1 , wherein the near-infrared absorbing material includes a quantum dot, a quinoid metal complex compound, a polymethine compound, a cyanine compound, a phthalocyanine compound, a merocyanine compound, a naphthalocyanine compound, an immonium compound, a diimmonium compound, a triarylmethane compound, a dipyrromethene compound, an anthraquinone compound, a diquinone compound, a naphthoquinone compound, a squarylium compound, a rylene compound, a perylene compound, a pyrylium compound, a squaraine compound, a thiopyrylium compound, a diketopyrrolopyrrole compound, a boron dipyrromethene compound, a nickel-dithiol complex compound, a croconium compound, a derivative thereof, or a combination thereof. 
     
     
       14. The combination structure of  claim 1 , wherein an optical spectrum of the combination structure has a maximum absorption wavelength in the wavelength region of greater than about 700 nm and less than or equal to 1200 nm, and
 a light absorption rate at the maximum absorption wavelength is greater than about 50%. 
 
     
     
       15. The combination structure of  claim 14 , wherein the maximum absorption wavelength is in a range of about 890 nm to about 990 nm. 
     
     
       16. The combination structure of  claim 1 , wherein
 an optical spectrum of the combination structure has a minimum transmission wavelength in a wavelength region of greater than about 700 nm and less than or equal to 1200 nm and 
 a transmittance at the minimum transmission wavelength is less than or equal to about 35%. 
 
     
     
       17. The combination structure of  claim 16 , wherein the minimum transmission wavelength is in a range of about 890 nm to about 990 nm. 
     
     
       18. The combination structure of  claim 1 , further comprising a substrate layer, and
 a refractive index of the substrate layer is lower than a refractive index of the nanostructure. 
 
     
     
       19. The combination structure of  claim 1 , wherein a thickness of the combination structure is less than or equal to about 1 μm. 
     
     
       20. An optical filter comprising the combination structure of  claim 1 . 
     
     
       21. A camera module comprising the optical filter of  claim 20 . 
     
     
       22. An electronic device comprising the camera module of  claim 21 . 
     
     
       23. An electronic device comprising the optical filter of  claim 20 . 
     
     
       24. An image sensor comprising:
 a semiconductor substrate including a plurality of photodiodes, and 
 an optical filter on the semiconductor substrate, the optical filter configured to block light in at least a portion of near-infrared wavelength regions, 
 wherein the optical filter includes the combination structure of  claim 1 . 
 
     
     
       25. The image sensor of  claim 24 , further comprising a color filter on the semiconductor substrate and on or under the optical filter. 
     
     
       26. The image sensor of  claim 24 , further comprising a dual band pass filter configured to transmit all visible wavelength regions and a portion of the near-infrared wavelength region. 
     
     
       27. A camera module comprising the image sensor of  claim 24 . 
     
     
       28. An electronic device comprising the image sensor of  claim 27 .