Semiconductor device

Abstract

A display device includes a flexible substrate, a plurality of TFTs, a first electrode arranged between a channel of one of the plurality of TFTs and the flexible substrate, at least one inorganic insulating film arranged between one of the plurality of TFTs and the first electrode, a second electrode arranged on the opposite side to the side where one of the plurality of TFTs is arranged with respect to the first electrode, and an organic insulating film arranged between the first electrode and the second electrode.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a flexible substrate; 
 a plurality of thin film transistors (TFTs) on a first side of the flexible substrate; 
 a first metal layer arranged between a channel of one of the plurality of TFTs and the flexible substrate; 
 at least one inorganic insulating film arranged between the one of the plurality of TFTs and the first metal layer; 
 a second metal layer arranged on a second side of the flexible substrate opposite from the first side with respect to the first metal layer; 
 an organic insulating film arranged between the first metal layer and the second metal layer, and 
 a first terminal on the first side of the flexible substrate, the first terminal has a conductive layer the same as a source metal layer of the one of the plurality of TFTs or a drain metal layer of the one of the plurality of TFTs, wherein 
 the second metal layer is electrically connected to the first terminal via a conductive member, 
 the second metal layer has one electrode which overlaps with whole of the plurality of TFTs uniformly, 
 the second metal layer does not overlap with the first terminal, and 
 the first metal layer is arranged between a gate electrode of the one of the plurality of TFTs and the flexible substrate. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein
 the organic insulating film is arranged between the flexible substrate and the second metal layer. 
 
     
     
       3. The semiconductor device according to  claim 1 , wherein
 the organic insulating film has a modulus of elasticity smaller than that of the flexible substrate and smaller than that of the second metal layer. 
 
     
     
       4. The semiconductor device according to  claim 1 , wherein
 the first metal layer is divided into at least two regions mutually separated from each other. 
 
     
     
       5. The semiconductor device according to  claim 4 , wherein
 the at least two regions include a first region and a second region, 
 the plurality of TFTs includes a first TFT and a second TFT, 
 the first metal layer of the first region is configured to apply a first voltage via the at least one inorganic insulating film to a channel of the first TFT, and 
 the first metal layer of the second region is configured to apply a second voltage via the at least one inorganic insulating film to a channel of the second TFT. 
 
     
     
       6. The semiconductor device according to  claim 4  further comprising a second terminal on the first side of the flexible substrate and a third terminal on the first side of the flexible substrate, wherein
 the at least two regions include a first region and a second region, 
 the first metal layer of the first region is inputted a first signal from the second terminal, and 
 the first metal layer of the second region is inputted a second signal from the third terminal. 
 
     
     
       7. The semiconductor device according to  claim 6 , wherein
 the first signal input to the first metal layer of the first region and the second signal input to the first metal layer of the second region are different signals.