US11796966B2ActiveUtilityA1
Method for producing a silicon-based timepiece spring
Est. expiryApr 16, 2038(~11.8 yrs left)· nominal 20-yr term from priority
G04D 3/0069G04B 1/145G04B 17/066G04B 21/06G04D 3/0076G04D 3/0089G04F 7/0804
55
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0
Cited by
28
References
20
Claims
Abstract
A method for producing a timepiece spring includes the following steps: producing a piece based on silicon, having the desired shape of the timepiece spring; thermally oxidising the piece; deoxidising the piece; annealing the piece in a reducing atmosphere; forming a silicon oxide layer on the piece.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1. Method for producing a timepiece spring, comprising the following steps:
a) producing a piece based on silicon, having the desired shape of the timepiece spring or comprising a part having the desired shape of the timepiece spring,
b) thermally oxidising the piece,
c) deoxidising the piece,
d) annealing the piece in a reducing atmosphere,
e) forming a silicon oxide layer on the piece.
2. The method as claimed in claim 1 , wherein step a) comprises an etching operation.
3. The method as claimed in claim 1 , wherein the thermal oxidation step is carried out at a temperature between 600° C. and 1300° C.
4. The method as claimed in claim 1 , wherein the annealing step is carried out at a pressure strictly greater than 50 Torr.
5. The method as claimed in claim 1 , wherein the annealing step is carried out at a pressure strictly greater than 100 Torr.
6. The method as claimed in claim 1 , wherein the annealing step is carried out at a pressure lower than or equal to atmospheric pressure.
7. The method as claimed in claim 1 , wherein the annealing step is carried out at a temperature between 800° C. and 1300° C.
8. The method as claimed in claim 1 , wherein step e) is carried out by thermal oxidation.
9. The method as claimed in claim 1 , wherein the silicon is monocrystalline or polycrystalline.
10. The method as claimed in claim 1 , wherein step a) comprises a deep reactive etching operation.
11. The method as claimed in claim 1 , wherein the thermal oxidation step is carried out at a temperature between 800° C. and 1200° C.
12. The method as claimed in claim 1 , wherein the deoxidation step comprises an etching operation, a vapour phase etching operation or a dry etching operation.
13. The method of claim 12 , wherein the deoxidation step comprises a wet etching operation.
14. The method as claimed in claim 1 , wherein the timepiece spring is a mainspring, a hammer spring, a lever spring, a rocker spring, a pawl spring, a jumper spring, a hairspring or a flexible guide.
15. The method of claim 14 , wherein the timepiece spring is a mainspring in the form of a barrel spring.
16. The method as claimed in claim 1 , wherein said reducing atmosphere includes hydrogen.
17. The method as claimed in claim 16 , wherein said reducing atmosphere also includes an inert gas.
18. The method of claim 17 , wherein the inert gas is argon.
19. Method for producing a timepiece spring, comprising the following steps:
a) producing a piece based on silicon, having the desired shape of the timepiece spring or comprising a part having the desired shape of the timepiece spring,
b) annealing the piece in a reducing atmosphere,
c) thermally oxidising the piece,
d) deoxidising the piece,
e) forming a silicon oxide layer on the piece.
20. The method as claimed in claim 19 , wherein step a) comprises an etching operation.Cited by (0)
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